M1MA141KT1G

M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC--70 package which is designed for low power surface mount applications. http://onsemi.com CATHODE 3 Features  Fast trr, < 3.0 ns  Low CD, < 2.0 pF  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant ANODE NO CONNECTION 1 2 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage Symbol M1MA141KT1 M1MA142KT1 Peak Reverse Voltage M1MA141KT1 M1MA142KT1 Forward Current Peak Forward Current Peak Forward Surge Current VR VRM Value Unit Vdc 40 80 Vdc 40 80 IF 100 mAdc IFM 225 mAdc IFSM (Note 1) 500 mAdc 3 1 2 MARKING DIAGRAM Mx M G G THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation Rating PD 150 mW Junction Temperature TJ 150 C Storage Temperature Tstg -- 55 ~ + 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 sec SC--70 (SOT--323) CASE 419 STYLE 2 Mx = Device Code x = H for 141 I for 142 M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† M1MA141KT1G SC--70 (Pb--Free) 3000/Tape & Reel M1MA142KT1G SC--70 (Pb--Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2010 October, 2010 -- Rev. 7 1 Publication Order Number: M1MA141KT1/D M1MA141KT1G, M1MA142KT1G ELECTRICAL CHARACTERISTICS (TA = 25C) Condition Characteristic Reverse Voltage Leakage Current M1MA141KT1 M1MA142KT1 Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time (Figure 1) M1MA141KT1 M1MA142KT1 Symbol Min Max Unit IR -- 0.1 mAdc IF = 100 mA VF -- 1.2 Vdc IR = 100 mA VR -- Vdc VR = 0, f = 1.0 MHz CD -- 2.0 pF IF = 10 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR trr (Note 2) -- 3.0 ns VR = 35 V VR = 75 V 2. trr Test Circuit http://onsemi.com 2 40 80 M1MA141KT1G, M1MA142KT1G RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp trr t t 10% RL A IF Irr = 0.1 IR 90% VR IF = 10 mA VR = 6 V RL = 100 Ω tp = 2 ms tr = 0.35 ns Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -- 40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.6 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance http://onsemi.com 3 8 50 M1MA141KT1G, M1MA142KT1G PACKAGE DIMENSIONS SC--70 (SOT--323) CASE 419--04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm  inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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