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MBRD1045T4G

MBRD1045T4G

  • 厂商:

    MURATA-PS(村田)

  • 封装:

    TO-252

  • 描述:

    直流反向耐压(Vr):45V;平均整流电流(Io):10A;正向压降(Vf):840mV@20A;

  • 数据手册
  • 价格&库存
MBRD1045T4G 数据手册
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Switch-mode Schottky Power Rectifier www.onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. 1 4 3 Features • • • • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared! SBRB and SBRD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics: • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 grams for D2PAK (approximately) MARKING DIAGRAM 4 MBRB1045G AKA 1 3 D2PAK CASE 418B A Y WW MBRB1045 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity 0.4 grams for DPAK (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) AY WW 4 1 2 3 DPAK CASE 369C Y WW B1045 G MARKING DIAGRAM YWW B10 45G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 9 1 Publication Order Number: MBRB1045/D MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 135°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 135°C IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 (MBRB/SBRB) 70 (MBRD/SBRD) TJ, Tstg −65 to +175 °C dv/dt 10000 V/ms A 20 Operating Junction and Storage Temperature Range (Note 1) Voltage Rate of Change (Rated VR) A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit °C/W Thermal Resistance, (MBRB1045G) Junction−to−Case (Note 2) Junction−to−Ambient (Note 2) (MBRD1045G) Junction−to−Case (Note 2) Junction−to−Ambient (Note 2) RqJC RqJA 1.0 50 RqJC RqJA 2.43 68 Symbol Value 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 10 Amps, TJ = 125°C) (IF = 20 Amps, TJ = 125°C) (IF = 20 Amps, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) IR Unit V 0.57 0.72 0.84 mA 15 0.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device Package MBRB1045G SBRB1045G MBRB1045T4G 50 Units / Rail D2PAK (Pb−Free) SBRB1045T4G SBRD81045T4G 50 Units / Rail 800 Units / Tape & Reel 800 Units / Tape & Reel MBRD1045G MBRD1045T4G Shipping† 50 Units / Rail DPAK (Pb−Free) SSBRD81045T4G 2,500 Units / Tape & Reel 2,500 Units / Tape & Reel 2,500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G 100 100 TJ = 150°C TJ = 150°C 70 70 100°C 25°C 100°C 50 25°C 30 30 20 20 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 50 10 7.0 5.0 3.0 2.0 1.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.1 0.1 0.2 0.4 0.6 0.8 1.2 1.0 1.4 0.2 0.4 0.6 0.8 1.2 1.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage 100 100 IR , REVERSE CURRENT (mA) TJ = 150°C IR , REVERSE CURRENT (mA) 1.4 125°C 10 100°C 1.0 75°C 0.1 25°C 150°C 10 125°C 1.0 100°C 75°C 0.1 0.01 0.01 25°C 0.001 0.001 0 5.0 10 15 20 25 30 35 40 45 0 50 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current www.onsemi.com 3 45 50 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G 1400 C, CAPACITANCE (pF) 1200 100 70 50 30 800 600 400 200 0 20 1.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 1000 2.0 3.0 5.0 7.0 10 20 30 50 0 70 100 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Maximum Surge Capability Figure 5. Typical Capacitance 18 RATED VOLTAGE APPLIED 16 14 dc 12 SQUARE WAVE 10 8.0 6.0 4.0 2.0 0 130 20 10 NUMBER OF CYCLES AT 60 Hz PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) IFSM , PEAK HALF-WAVE CURRENT (AMPS) 200 135 140 145 150 155 TC, CASE TEMPERATURE (°C) 50 10 9.0 dc 8.0 7.0 SQUARE WAVE 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Figure 6. Current Derating, Case, RqJC = 1.0 °C/W 2.0 4.0 6.0 8.0 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Forward Power Dissipation www.onsemi.com 4 18 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 3 S −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) H M T B M SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRB1045/D Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: MBRD1045T4G SBRB1045T4G MBRB1045G MBRB1045T4G SBRB1045G
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