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MBRD350T4G

MBRD350T4G

  • 厂商:

    MURATA-PS(村田)

  • 封装:

    TO-252

  • 描述:

    直流反向耐压(Vr):50V;平均整流电流(Io):3A;正向压降(Vf):600mV@3A;

  • 数据手册
  • 价格&库存
MBRD350T4G 数据手册
MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G Switch-mode Power Rectifiers www.onsemi.com DPAK Surface Mount Package These state−of−the−art devices are designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 20 − 60 VOLTS Features • • • • • Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings NRVBD and SBRD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DPAK CASE 369C 1 4 3 MARKING DIAGRAM Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes; 260°C Max. for 10 Seconds ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B YWW B 3x0G Y WW B3x0 x G = Year = Work Week = Device Code = 2, 3, 4, 5, or 6 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2016 October, 2016 − Rev. 9 1 Publication Order Number: MBRD320/D MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G MAXIMUM RATINGS MBRD/SBRD8 Rating Symbol 320 330 340 350 360 20 30 40 50 60 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V Average Rectified Forward Current (TC = +125°C, Rated VR) IF(AV) 3 A Peak Repetitive Forward Current, TC = +125°C (Rated VR, Square Wave, 20 kHz) IFRM 6 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 A Peak Repetitive Reverse Surge Current (2 ms, 1 kHz) IRRM 1 A Operating Junction Temperature Range (Note 1) TJ −65 to +175 °C Storage Temperature Range Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 6 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W Symbol Value Unit 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) iF = 3 Amps, TC = +25°C iF = 3 Amps, TC = +125°C iF = 6 Amps, TC = +25°C iF = 6 Amps, TC = +125°C VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = +25°C) (Rated dc Voltage, TC = +125°C) iR V 0.6 0.45 0.7 0.625 mA 0.2 20 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G ORDERING INFORMATION Device Package Shipping† MBRD320G 75 Units / Rail SBRD8320G* 75 Units / Rail MBRD320RLG 1,800 Tape & Reel MBRD320T4G 2,500 Tape & Reel SBRD8320T4G* 2,500 Tape & Reel MBRD330G 75 Units / Rail SBRD8330G* 75 Units / Rail MBRD330RLG 1,800 Tape & Reel MBRD330T4G 2,500 Tape & Reel SBRD8330T4G* 2,500 Tape & Reel MBRD340G 75 Units / Rail SBRD8340G* 75 Units / Rail MBRD340RLG 1,800 Tape & Reel MBRD340T4G SBRD8340T4G* DPAK (Pb−Free) 2,500 Tape & Reel 2,500 Tape & Reel MBRD350G 75 Units / Rail SBRD8350G* 75 Units / Rail MBRD350RLG 1,800 Tape & Reel SBRD8350RLG* 1,800 Tape & Reel MBRD350T4G 2,500 Tape & Reel SBRD8350T4G* 2,500 Tape & Reel MBRD360G 75 Units / Rail SBRD8360G* 75 Units / Rail MBRD360RLG 1,800 Tape & Reel SBRD8360RLG* 1,800 Tape & Reel MBRD360T4G 2,500 Tape & Reel NRVBD360VT4G* 2,500 Tape & Reel SBRD8360T4G* 2,500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVBD and SBRD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 3 MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G TYPICAL CHARACTERISTICS 100 I R , REVERSE CURRENT (mA) 10 40 20 10 TJ = 150°C 125°C 4.0 2.0 1.0 100°C 75°C 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 0.001 25°C 0 40 20 30 50 VR, REVERSE VOLTAGE (VOLTS) 10 70 60 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 150°C TJ = 25°C Figure 2. Typical Reverse Current 125°C PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 75°C 1.0 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 SINE WAVE 9.0 TJ = 150°C 8.0 5 7.0 10 6.0 5.0 dc IPK/IAV = 20 SQUARE WAVE 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage Figure 3. Average Power Dissipation www.onsemi.com 4 9.0 10 MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G I F(AV) , AVERAGE FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 8.0 RATED VOLTAGE APPLIED 7.0 RqJC = 6°C/W 6.0 TJ = 150°C SINE WAVE OR SQUARE WAVE 5.0 4.0 3.0 dc 2.0 1.0 0 80 90 100 110 120 140 130 150 160 TC, CASE TEMPERATURE (°C) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Case 4.0 RqJA = 80°C/W SURFACE MOUNTED ON MIN. PAD SIZE RECOMMENDED TJ = 150°C 3.5 3.0 dc SQUARE WAVE OR SINE WAVE VR = 25 V 2.5 TJ = 125°C 2.0 1.5 TJ = 150°C 1.0 0.5 0 0 20 40 60 100 80 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Ambient C, CAPACITANCE (pF) 1K 700 500 300 200 TJ = 25°C 100 70 50 30 20 10 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance www.onsemi.com 5 60 70 MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 b2 e c SIDE VIEW b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRD320/D
MBRD350T4G 价格&库存

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