MGSF1N02LT1G

MGSF1N02L, MVGSF1N02L Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. www.onsemi.com 750 mAMPS, 20 VOLTS RDS(on) = 90 mW N−Channel 3 Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • MVGSF Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free and are RoHS Compliant 1 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Rating Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) 3 Drain 1 ID IDM 750 2000 mA PD 400 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance, Junction−to−Ambient RqJA 300 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Total Power Dissipation @ TA = 25°C MARKING DIAGRAM/ PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. SOT−23 CASE 318 STYLE 21 N2 M G G 1 Gate 2 Source N2 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MGSF1N02LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MVGSF1N02LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1996 October, 2016 − Rev. 7 1 Publication Order Number: MGSF1N02LT1/D MGSF1N02L, MVGSF1N02L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) − − 0.075 0.115 0.090 0.130 mAdc ON CHARACTERISTICS (Note 1) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss − 125 − pF Output Capacitance (VDS = 5.0 Vdc) Coss − 120 − Transfer Capacitance (VDG = 5.0 Vdc) Crss − 45 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − tf − 8.0 − QT − 6000 − pC IS − − 0.6 A Pulsed Current ISM − − 0.75 − Forward Voltage (Note 2) VSD − 0.8 − V SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 W) Turn−Off Delay Time Fall Time Gate Charge (See Figure 6) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 3 2.5 4V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VDS = 10 V 2 - 55°C 1.5 TJ = 150°C 1 0.5 1 1.5 2 2.5 3.25 V 3.5 V 2 VGS = 3.0 V 1.5 2.75 V 1 2.5 V 0.5 25°C 0 2.5 2.25 V 3 0 3.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 2 4 6 8 3 5 7 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On−Region Characteristics www.onsemi.com 2 1 9 10 MGSF1N02L, MVGSF1N02L R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 0.2 150°C 0.18 0.16 VGS = 4.5 V 0.14 25°C 0.12 -55°C 0.1 0.08 0.06 0.04 0 0.1 0.3 0.2 0.4 0.5 0.6 0.7 0.8 0.9 1 0.14 0.13 150°C 0.12 VGS = 10 V 0.11 0.1 0.09 25°C 0.08 0.07 -55°C 0.06 0.05 0.04 0 0.2 0.4 0.6 ID, DRAIN CURRENT (AMPS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 VGS = 10 V ID = 2 A 1.4 1.3 VGS = 4.5 V ID = 1 A 1.2 1.1 1 0.9 0.8 0.7 1.2 1.6 1.4 1.8 2 10 VDS = 16 V TJ = 25°C 8 6 4 ID = 2.0 A 2 0 0.6 -55 -5 45 95 145 0 2000 1000 TJ, JUNCTION TEMPERATURE (°C) 3000 4000 5000 6000 QT, TOTAL GATE CHARGE (pC) Figure 6. Gate Charge Figure 5. On−Resistance Variation with Temperature 1 1000 TJ = 150°C 0.1 25°C VGS = 0 V f = 1 MHz TJ = 25°C -55°C C, CAPACITANCE (pF) I D , DIODE CURRENT (AMPS) 1 Figure 4. On−Resistance versus Drain Current Figure 3. On−Resistance versus Drain Current 1.5 0.8 ID, DRAIN CURRENT (AMPS) 0.01 Ciss 100 Coss Crss 0.001 0 0.2 0.4 0.6 10 1 0.8 0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (Volts) VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance www.onsemi.com 3 20 MGSF1N02L, MVGSF1N02L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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