MGSF1N03LT3

MGSF1N03L, MVGSF1N03L MOSFET – Single, N-Channel, SOT-23 30 V, 2.1 A These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. www.onsemi.com V(BR)DSS RDS(on) TYP 80 mW @ 10 V 30 V Features N−Channel D Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 2.1 A Continuous Drain Current RqJL Steady State TA = 25°C Power Dissipation RqJL Steady State TA = 25°C PD 0.69 W Continuous Drain Current (Note 1) Steady State TA = 25°C ID 1.6 A Power Dissipation (Note 1) TA = 85°C S MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain 1.5 TA = 85°C TA = 25°C 2.1 A 125 mW @ 4.5 V • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • MV Prefix for Automotive and Other Applications Requiring • ID MAX 1 SOT−23 CASE 318 STYLE 21 1.2 N3 M G G 1 Gate 2 Source PD 0.42 W tp = 10 ms IDM 6.0 A C = 100 pF, RS = 1500 W ESD 125 V TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 2.1 A (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Lead Temperature for Soldering Purposes (1/8” from case for 10 sec) TL 260 °C ORDERING INFORMATION Pulsed Drain Current ESD Capability (Note 3) Operating Junction and Storage Temperature Symbol Max Unit Junction−to−Foot − Steady State RqJL 180 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 300 Junction−to−Ambient − t < 10 s (Note 1) RqJA 250 Junction−to−Ambient − Steady State (Note 2) RqJA 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 650 mm2, 1 oz. Cu pad size. 2. Surface−mounted on FR4 board using 50 mm2, 1 oz. Cu pad size. 3. ESD Rating Information: HBM Class 0. © Semiconductor Components Industries, LLC, 1996 May, 2019 − Rev. 11 = Specific Device Code = Date Code* = Pb−Free Package Package Shipping† MGSF1N03LT1G SOT−23 Pb−Free 3000 / Tape & Reel MGSF1N03LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel MVGSF1N03LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device THERMAL RESISTANCE RATINGS Parameter N3 M G 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MGSF1N03LT1/D MGSF1N03L, MVGSF1N03L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 30 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) − − 0.08 0.125 0.10 0.145 mAdc ON CHARACTERISTICS (Note 4) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss − 140 − pF Output Capacitance (VDS = 5.0 Vdc) Coss − 100 − Transfer Capacitance (VDG = 5.0 Vdc) Crss − 40 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − tf − 8.0 − QT − 6000 − pC IS − − 0.6 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 5) VSD − 0.8 − SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 W) Fall Time Gate Charge (See Figure 6) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2 MGSF1N03L, MVGSF1N03L TYPICAL ELECTRICAL CHARACTERISTICS 2.5 2.5 VGS = 3.75 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VDS = 10 V 2 1.5 - 55°C 1 TJ = 150°C 0.5 3.5 V 2 1.5 3.25 V 1 3.0 V 0.5 2.75 V 25°C 0 1 2.5 V 0 3.5 1.5 2 2.5 3 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 2 6 4 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On−Region Characteristics RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 0.24 150°C 0.19 VGS = 4.5 V 25°C 0.14 -55°C 0.09 0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.16 150°C 0.14 VGS = 10 V 0.12 0.1 25°C 0.08 -55°C 0.06 0.04 0 ID, DRAIN CURRENT (AMPS) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance versus Drain Current Figure 3. On−Resistance versus Drain Current www.onsemi.com 3 2 MGSF1N03L, MVGSF1N03L 1.8 1.6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS VGS = 10 V ID = 2 A 1.4 1.2 VGS = 4.5 V ID = 1 A 1 0.8 0.6 0.4 0.2 0 -55 10 VDS = 24 V TJ = 25°C 8 6 4 ID = 2.0 A 2 0 -25 25 0 75 50 100 125 150 0 1000 TJ, JUNCTION TEMPERATURE (°C) 3000 4000 5000 6000 QT, TOTAL GATE CHARGE (pC) Figure 6. Gate Charge Figure 5. On−Resistance Variation with Temperature 1 350 VGS = 0 V f = 1 MHz TJ = 25°C 300 TJ = 150°C 0.1 25°C -55°C C, CAPACITANCE (pF) I D , DIODE CURRENT (AMPS) 2000 0.01 250 200 150 Ciss 100 Coss 50 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 Crss 0 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (Volts) VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance www.onsemi.com 4 20 MGSF1N03L, MVGSF1N03L TYPICAL ELECTRICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 10 10 ms 100 ms 1 ms 1 10 ms 0.1 0 V < VGS < 10 V Single Pulse TJ = 150°C, TC = 25°C 0.01 0.1 1 ms RDS(on) Limit Thermal Limit Package Limit dc 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Maximum Rated Forward Biased Safe Operating Area TRANSIENT THERMAL RESPONSE − RqJA (°C/W) 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 10. Thermal Response www.onsemi.com 5 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative