MJD44H11T4G

MJD44H11(NPN), MJD45H11(PNP) Complementary Power Transistors DPAK for Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves • • • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS, 20 WATTS COMPLEMENTARY COLLECTOR 2, 4 1 BASE 1 BASE 3 EMITTER 4 sign, “−”, for PNP omitted, unless otherwise noted) Rating Emitter−Base Voltage Collector Current − Continuous Symbol Max Unit VCEO 80 Vdc VEB 5 Vdc IC 8 Adc Collector Current − Peak ICM 16 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.75 0.014 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3 EMITTER 4 MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus Collector−Emitter Voltage COLLECTOR 2, 4 1 2 1 3 DPAK CASE 369C STYLE 1 2 3 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS AYWW J4 xH11G AYWW J4 xH11G DPAK A Y WW J4xH11 G IPAK = = = = Assembly Location Year Work Week Device Code x = 4 or 5 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 16 1 Publication Order Number: MJD44H11/D MJD44H11 (NPN), MJD45H11 (PNP) THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 71.4 °C/W TL 260 °C Unit Lead Temperature for Soldering 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted) Characteristic Symbol Min Typ Max 80 − − − − 1.0 − − 1.0 − − 1 − − 1.5 60 40 − − − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES Emitter Cutoff Current (VEB = 5 Vdc) IEBO Vdc mA mA ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) (VCE = 1 Vdc, IC = 4 Adc) hFE Vdc Vdc − DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 Mhz) MJD44H11, NJVMJD44H11G/T4G/RLG MJD45H11, NJVMJD45H11G/T4G/RLG Ccb Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz) MJD44H11, NJVMJD44H11G/T4G/RLG MJD45H11, NJVMJD45H11G/T4G/RLG fT pF − − 45 130 − − MHz − − 85 90 − − SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11, NJVMJD44H11G/T4G/RLG MJD45H11, NJVMJD45H11G/T4G/RLG td + tr Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11, NJVMJD44H11G/T4G/RLG MJD45H11, NJVMJD45H11G/T4G/RLG ts Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11, NJVMJD44H11G/T4G/RLG MJD45H11, NJVMJD45H11G/T4G/RLG tf ns − − 300 135 − − ns − − 500 500 − − ns − − http://onsemi.com 2 140 100 − − r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD44H11 (NPN), MJD45H11 (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 RqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 0.05 0.02 0.01 0.03 0.02 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 1. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 20 10 500ms 5 3 2 dc 100ms 1ms 5ms 1 THERMAL LIMIT @ TC = 25°C WIRE BOND LIMIT 0.5 0.3 0.1 0.05 1 50 3 5 7 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Maximum Forward Bias Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 0.02 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 3 125 150 MJD44H11 (NPN), MJD45H11 (PNP) 1000 VCE = 1 V VCE = 1 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 150°C 25°C 100 10 −55°C 0.01 0.1 1 150°C 25°C 10 10 −55°C 100 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain 1000 1000 hFE, DC CURRENT GAIN 150°C 25°C 10 VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) VCE = 4 V −55°C 0.01 0.1 1 0.01 0.1 1 10 Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain IC/IB = 20 150°C 0.5 0.4 25°C 0.3 0.2 −55°C 0.1 0.01 −55°C 100 IC, COLLECTOR CURRENT (A) 0.6 0 25°C IC, COLLECTOR CURRENT (A) 0.8 0.7 150°C 10 10 VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 4 V 100 10 IC, COLLECTOR CURRENT (A) 0.1 1 10 0.8 IC/IB = 20 0.7 −55°C 0.6 0.5 0.4 25°C 0.3 150°C 0.2 0.1 0 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. MJD44H11 Saturation Voltage VCE(sat) Figure 9. MJD45H11 Saturation Voltage VCE(sat) http://onsemi.com 4 10 MJD44H11 (NPN), MJD45H11 (PNP) 1.4 1.0 0.8 −55°C 25°C 0.6 0.4 150°C IC/IB = 20 0.2 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) 1.2 0.01 0.1 1 −55°C 0.8 25°C 0.6 150°C 0.4 IC/IB = 20 0.2 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 10. MJD44H11 Saturation Voltage VBE(sat) Figure 11. MJD45H11 Saturation Voltage VBE(sat) 1.8 TA = 25°C 1.6 1.4 1.2 1.0 0.8 0.6 IC = 8 A 0.4 1A 0.2 IC = 0.1 A 0.5 A 0 0.1 1 10 IC = 3 A 100 1000 10,000 2.0 1.8 TA = 25°C 1.6 1.4 1.2 1.0 0.8 IC = 8 A 0.6 IC = 3 A 0.4 0.2 I = 0.1 A 0.5 A C 0 0.1 1 1A 10 100 1000 10,000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 12. MJD44H11 Collector Saturation Region Figure 13. MJD45H11 Collector Saturation Region 1000 C, CAPACITANCE (pF) 1000 C, CAPACITANCE (pF) 1.0 IC, COLLECTOR CURRENT (A) 2.0 Cob 100 10 1.2 0 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) 1.4 0.1 1 10 Cob 100 10 100 0.1 1 10 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance http://onsemi.com 5 100 MJD44H11 (NPN), MJD45H11 (PNP) 100 VCE = 2 V 10 0.01 fTau, CURRENT−GAIN−BANDWIDTH PRODUCT fTau, CURRENT−GAIN−BANDWIDTH PRODUCT 100 0.1 1 10 10 VCE = 2 V 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 16. MJD44H11 Current−Gain−Bandwidth Product Figure 17. MJD45H11 Current−Gain−Bandwidth Product 10 ORDERING INFORMATION Package Type Package Shipping† MJD44H11G DPAK (Pb−Free) 369C 75 Units / Rail NJVMJD44H11G DPAK (Pb−Free) 369C 75 Units / Rail MJD44H11−1G DPAK−3 (Pb−Free) 369D 75 Units / Rail MJD44H11RLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel NJVMJD44H11RLG* DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD44H11T4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD44H11T4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel MJD44H11T5G DPAK (Pb−Free) 369C 2,500 / Tape & Reel MJD45H11G DPAK (Pb−Free) 369C 75 Units / Rail NJVMJD45H11G* DPAK (Pb−Free) 369C 75 Units / Rail MJD45H11−1G DPAK−3 (Pb−Free) 369D 75 Units / Rail MJD45H11RLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel NJVMJD45H11RLG* DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD45H11T4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD45H11T4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable http://onsemi.com 6 MJD44H11 (NPN), MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.101 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− MJD44H11 (NPN), MJD45H11 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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