MMBT4401WT1G

MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO 40 Vdc Collector−Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current − Continuous 2 EMITTER 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C 2 SC−70 (SOT−323) CASE 419 STYLE 3 MARKING DIAGRAM 2X MG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT4401WT1G Package Shipping† SC−70 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 4 1 Publication Order Number: MMBT4401WT1/D MMBT4401WT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc IBEV − 0.1 mAdc 20 40 80 100 40 − − − 300 − − − 0.4 0.75 0.75 − 0.95 1.2 ICEX − 0.1 mAdc fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10− 4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 15 tr − 20 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 30 OFF CHARACTERISTICS Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V +16 V 0 -2.0 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 200 W +16 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 200 W 0 1.0 kW < 2.0 ns 1.0 kW -14 V CS* < 10 pF < 20 ns -4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 2 CS* < 10 pF MMBT4401WT1G TRANSIENT CHARACTERISTICS 25°C 100°C 30 10 7.0 5.0 10 7.0 5.0 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 3.0 Cobo Q, CHARGE (nC) CAPACITANCE (pF) 20 QA 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 IC/IB = 10 70 VCC = 30 V IC/IB = 10 70 tr 50 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 20 t, TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 tf 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise and Fall Times 300 300 500 100 ts′ = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) 200 t s′, STORAGE TIME (ns) 300 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 3 300 500 MMBT4401WT1G SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 IC = 1.0 mA, RS = 150 W IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW IC = 50 mA, RS = 4.0 kW 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 6.0 4.0 IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 0 10 20 50 50 100 100 200 500 1.0k 2.0k 5.0k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k 100k Figure 10. Source Resistance Effects Figure 9. Frequency Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4401WT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 50k hie , INPUT IMPEDANCE (OHMS) hfe , CURRENT GAIN 200 100 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 70 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10k 5.0k 2.0k 1.0k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Input Impedance 10 5.0 7.0 10 100 7.0 5.0 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 20k 500 5.0 7.0 10 hoe , OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 20 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 50 20 10 2.0 1.0 0.1 5.0 7.0 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 4 5.0 7.0 10 MMBT4401WT1G STATIC CHARACTERISTICS 1000 1000 VCE = 1 V hFE, DC CURRENT GAIN TA = 150°C TA = 25°C TA = −55°C 100 10 0.1 1 10 100 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) TA = 25°C 100 10 1000 TA = 25°C 1 mA 10 mA 100 mA IC = 600 mA 0.2 0.001 0.01 0.1 1 10 100 TA = −55°C TA = 25°C TA = 150°C 0.1 1 10 100 1000 Figure 17. Saturation Region Figure 18. Collector Emitter Saturation Voltage vs. Collector Current 1.0 IC/IB = 10 0.9 VBE(ON), BASE−EMITTER ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.2 IC, COLLECTOR CURRENT (mA) 1.0 TA = −55°C TA = 25°C 0.5 0.3 0.2 1000 IC/IB = 10 0.02 1.2 0.4 100 IB, BASE CURRENT (mA) 1.1 0.6 10 Figure 16. DC Current Gain vs. Collector Current 0.4 0.7 1 Figure 15. DC Current Gain vs. Collector Current 0.6 0.8 0.1 IC, COLLECTOR CURRENT (mA) 0.8 0.9 TA = −55°C IC, COLLECTOR CURRENT (mA) 1.0 0 TA = 150°C VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 10 V TA = 150°C TA = −55°C 0.8 0.7 TA = 25°C 0.6 0.5 0.4 TA = 150°C 0.3 0.1 1 10 100 1000 0.2 VCE = 1 V 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 19. Base Emitter Saturation Voltage vs. Collector Current Figure 20. Base Emitter Turn−ON Voltage vs. Collector Current http://onsemi.com 5 MMBT4401WT1G 1000 +0.5 1s qVC for VCE(sat) IC, COLLECTOR CURRENT (mA) COEFFICIENT (mV/ °C) 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 0.2 qVB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 10 Single Pulse Test at TA = 25°C 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 21. Temperature Coefficients Figure 22. Safe Operating Area http://onsemi.com 6 0.1 ms 100 1.0 1.0 500 100 ms 10 ms 1 ms 100 MMBT4401WT1G PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. 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