NSS60600MZ4T1G

NSS60600MZ4 Low VCE(sat) Transistor, PNP, 60 V, 6.0 A, SOT-223 Package ON Semiconductor’s e 2PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com −60 VOLTS, 6.0 AMPS 2.0 WATTS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 50 mW 4 1 2 3 SOT−223 CASE 318E STYLE 1 Features • Complementary to NSS60601MZ4 • NSV Prefix for Automotive and Other Applications Requiring • C 2, 4 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25°C) Max Unit Collector-Emitter Voltage VCEO −60 Vdc Collector-Base Voltage VCBO −100 Vdc Emitter-Base Voltage VEBO −6.0 Vdc IC −6.0 A ICM −12.0 A Collector Current − Continuous Collector Current − Peak E3 MARKING DIAGRAM Symbol Rating B1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AYW 60600G 1 A Y W 60600 G = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT 4 C B C E 1 2 3 Top View Pinout *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 5 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: NSS60600MZ4/D NSS60600MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Max Unit 800 6.5 mW mW/°C °C/W 155 2 15.6 W mW/°C °C/W 64 Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Note 3) 710 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR− 4 @ 7.6 mm2, 1 oz. copper traces. 2. FR− 4 @ 645 mm2, 1 oz. copper traces. 3. Thermal response. ORDERING INFORMATION Package Shipping† NSS60600MZ4T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel NSV60600MZ4T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel NSS60600MZ4T3G SOT−223 (Pb−Free) 4,000 / Tape & Reel NSV60600MZ4T3G SOT−223 (Pb−Free) 4,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NSS60600MZ4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −60 − − Vdc Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −100 − − Vdc Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) OFF CHARACTERISTICS V(BR)EBO −6.0 − − Vdc Collector Cutoff Current (VCB = −100 Vdc, IE = 0) ICBO − − −0.1 mAdc Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO − − −0.1 mAdc 150 120 100 70 − − − − − 360 − − − − − − − − −0.050 −0.100 − − −0.050 −0.070 −0.120 −0.250 −0.350 − − −1.0 − − −0.900 100 − − ON CHARACTERISTICS hFE DC Current Gain (Note 4) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) (IC = −6.0 A, VCE = −2.0 V) − Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −2.0 mA) (IC = −1.0 A, IB = −0.100 A) (IC = −2.0 A, IB = −0.200 A) (IC = −3.0 A, IB = −60 mA) (IC = −6.0 A, IB = −0.6 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −1.0 A, VCE = −2.0 V) VBE(on) V V V Cutoff Frequency (IC = −500 mA, VCE = −10 V, f = 1.0 MHz) fT MHz Input Capacitance (VEB = 5.0 V, f = 1.0 MHz) Cibo − 360 − pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − 60 − pF Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) td − 100 − ns Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tr − 180 − ns Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) ts − 540 − ns Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tf − 145 − ns SWITCHING CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. PD, POWER DISSIPATION (W) 2.5 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 TJ, TEMPERATURE (°C) Figure 1. Power Derating www.onsemi.com 3 125 150 NSS60600MZ4 TYPICAL CHARACTERISTICS 1000 1000 VCE = 4 V 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 2 V 25°C −40°C 100 10 0.001 150°C 25°C 10 0.01 0.1 1 10 0.001 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain Figure 3. DC Current Gain 10 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 150°C 0.1 25°C −40°C 0.01 IC/IB = 50 −40°C 25°C 0.1 150°C 0.01 0.001 0.001 0.01 0.1 1 0.001 10 IC, COLLECTOR CURRENT (A) VBE(on), EMITTER−BASE VOLTAGE (V) TJ = 25°C IC = 6 A 3A 0.1 0.01 1.0E−04 2A 1A 0.1 A 1.0E−03 0.5 A 1.0E−02 1.0E−01 0.1 1 10 Figure 5. Collector−Emitter Saturation Voltage 10 1 0.01 IC, COLLECTOR CURRENT (A) Figure 4. Collector−Emitter Saturation Voltage VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.01 IC, COLLECTOR CURRENT (A) 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) −40°C 100 1.0E+00 1.0E+01 1.2 1.1 VCE = 2 V 1.0 0.9 −40°C 0.8 0.7 0.6 25°C 0.5 0.4 0.3 0.2 0.1 0 0.001 IB, BASE CURRENT (A) 150°C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Saturation Region Figure 7. VBE(on) Voltage www.onsemi.com 4 10 NSS60600MZ4 TYPICAL CHARACTERISTICS 1.2 IC/IB = 10 1.0 0.9 0.8 VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) VBE(sat), EMITTER−BASE SATURATION VOLTAGE (V) 1.2 1.1 −40°C 0.7 0.6 0.5 25°C 0.4 150°C 0.3 0.2 0.1 0 0.001 0.01 0.1 1 10 1.1 1.0 IC/IB = 50 0.9 −40°C 0.8 0.7 0.6 25°C 0.5 0.4 0.3 150°C 0.2 0.1 0 0.001 0.01 IC, COLLECTOR CURRENT (A) 180 TJ = 25°C ftest = 1 MHz 800 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 10 Figure 9. Base−Emitter Saturation Voltage 900 700 600 500 400 300 200 100 160 TJ = 25°C ftest = 1 MHz 140 120 100 80 60 40 20 0 0 1 2 3 4 5 7 6 8 0 10 20 30 40 50 60 Figure 10. Input Capacitance Figure 11. Output Capacitance IC, COLLECTOR CURRENT (A) TJ = 25°C ftest = 1 MHz VCE = 10 V 100 80 60 40 20 0 0.001 90 100 VCB, COLLECTOR BASE VOLTAGE (V) 100 120 80 70 VEB, EMITTER BASE VOLTAGE (V) 140 fTau, CURRENT BANDWIDTH PRODUCT (MHz) 1 IC, COLLECTOR CURRENT (A) Figure 8. Base−Emitter Saturation Voltage 0 0.1 0.01 0.1 1 10 100 ms 10 ms 1 ms 10 1s 100 ms 1 10 ms DC 1 ms 0.5 ms 0.1 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area www.onsemi.com 5 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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