NTD5865NLT4G

NTD5865NL N-Channel Power MOSFET 60 V, 46 A, 16 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) VGS ±30 V Steady State ID TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy 16 mW @ 10 V 46 A D N−Channel G TC = 25°C Pulsed Drain Current ID MAX (L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) A 46 S 33 PD 71 W IDM 203 A TJ, Tstg −55 to 175 °C 4 1 1 2 IS 46 A EAS 36 mJ IAS 27 A TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 DPAK CASE 369AA (Surface Mount) STYLE 2 Symbol Value Unit Junction−to−Case (Drain) RqJC 2.1 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 49 1. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 2 3 IPAK CASE 369D (Straight Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain 4 Drain THERMAL RESISTANCE MAXIMUM RATINGS Parameter 4 AYWW 58 65NLG Power Dissipation (RqJC) RDS(on) MAX 19 mW @ 4.5 V Symbol Continuous Drain Current (RqJC) V(BR)DSS 60 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter http://onsemi.com AYWW 58 65NLG • • • • • 2 1 Drain 3 Gate Source 1 2 3 Gate Drain Source A = Assembly Location* Y = Year WW = Work Week 5865NL = Device Code G = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 4 1 Publication Order Number: NTD5865NL/D NTD5865NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V 55 TJ = 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA VGS = 0 V, VDS = 60 V mV/°C 1.0 TJ = 150°C mA 100 ±100 nA 2.0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ 1.0 5.6 mV/°C Drain−to−Source on Resistance RDS(on) VGS = 10 V, ID = 20 A 13 16 mW Drain−to−Source on Resistance RDS(on) VGS = 4.5 V, ID = 20 A 16 19 mW gFS VDS = 15 V, ID = 20 A 15 S 1400 pF Forward Transconductance CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 25 V Output Capacitance Coss Reverse Transfer Capacitance Crss 95 Total Gate Charge QG(TOT) 29 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge Total Gate Charge Gate Resistance 137 nC VGS = 10 V, VDS = 48 V, ID = 40 A 1.1 VGS = 4.5 V, VDS = 48 V, ID = 40 A 15 nC 1.3 W td(on) 8.4 ns tr 12.4 QGD QG(TOT) 4 8 RG SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 48 V, ID = 40 A, RG = 2.5 W tf 26 4.4 DRAIN−SOURCE DIODE CHARACTERISTICS TJ = 25°C 0.95 TJ = 125°C 0.85 Forward Diode Voltage VSD Reverse Recovery Time tRR 20 Charge Time ta 13 Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 40 A VGS = 0 V, dIs/dt = 100 A/ms, IS = 40 A QRR 1.2 V ns 7 13 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD5865NL TYPICAL CHARACTERISTICS 80 3.8 V 3.6 V 50 3.4 V 40 3.2 V 30 20 3V 10 2.8 V 1 2 3 4 30 TJ = 25°C 20 5 TJ = 125°C 1 TJ = −55°C 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 40 A TJ = 25°C 0.025 0.020 0.015 0.010 3 4 5 6 7 8 9 10 0.018 TJ = 25°C VGS = 4.5 V 0.016 0.014 VGS = 10 V 0.012 0.010 5 10 15 20 25 30 35 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current 40 10000 2.2 2.0 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.030 2 50 0 ID = 38 A VGS = 10 V VGS = 0 V TJ = 150°C 1.8 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 60 10 2.6 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (A) 4.5 V 60 VDS ≥ 10 V 70 TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 70 80 4V VGS = 10 V 1.6 1.4 1.2 1.0 1000 TJ = 125°C 0.8 0.6 −50 100 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTD5865NL TYPICAL CHARACTERISTICS 10 VGS = 0 V TJ = 25°C 1600 Ciss C, CAPACITANCE (pF) 1400 VGS, GATE−TO−SOURCE VOLTAGE (V) 1800 1200 1000 800 600 400 Coss 200 Crss 0 0 10 20 30 40 50 60 8 6 4 Qgs Qgd 2 VDS = 48 V ID = 40 A TJ = 25°C 0 0 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 1000 30 40 VDD = 48 V ID = 40 A VGS = 10 V IS, SOURCE CURRENT (A) td(off) tr 10 VGS = 0 V 35 100 td(on) tf 1 10 TJ = 25°C 30 25 20 15 10 5 0 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1 100 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) QT 100 VGS = 10 V SINGLE PULSE TC = 25°C 100 ms 10 ms 10 ms 1 ms 10 dc 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTD5865NL TYPICAL CHARACTERISTICS RqJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 Duty Cycle = 0.5 1 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (s) Figure 12. Thermal Response ORDERING INFORMATION Package Shipping† NTD5865NL−1G IPAK (Straight Lead) (Pb−Free) 75 Units / Rail NTD5865NLT4G DPAK (Pb−Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD5865NL PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3.00 0.118 1.60 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD5865NL PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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