NTD5865NT4G

NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features • • • • • Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant Parameter Symbol VDSS VGS VGS TC = 25°C Steady State TC = 100°C TC = 25°C PD IDM TJ, Tstg IS L = 0.1 mH EAS IAS TL ID Value 60 "20 "30 38 24 52 137 − 55 to 150 38 36 27 260 W A °C A mJ A °C Unit V V V http://onsemi.com V(BR)DSS 60 V RDS(on) MAX 18 mW @ 10 V D ID MAX 38 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) Continuous Drain Current (RqJC) Power Dissipation (RqJC) Pulsed Drain Current G A S N−CHANNEL MOSFET 4 4 12 tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy 3 1 Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DPAK CASE 369C (Surface Mount) STYLE 2 3 IPAK CASE 369D (Straight Lead) STYLE 2 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 65NG 4 Drain YWW 58 65NG 1 23 Gate Drain Source = Year = Work Week = Device Code = Pb−Free Package Publication Order Number: NTD5865N/D THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 1) Symbol RqJC RqJA Value 2.4 42 Unit °C/W 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. 2 1 Drain 3 Gate Source Y WW 5865N G ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 May, 2010 − Rev. 0 1 NTD5865N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = 10 V, ID = 20 A VDS = 15 V, ID = 20 A VGS = 0 V, VDS = 60 V TJ = 25°C TJ = 150°C VGS = 0 V, ID = 250 mA 60 59.2 1.0 100 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 2.0 8.6 14 6.9 4.0 V mV/°C 18 mW S CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dIs/dt = 100 A/ms, IS = 38 A TJ = 25°C TJ = 125°C VGS = 10 V, VDD = 48 V, ID = 38 A, RG = 2.5 W 10 17 20 3.5 ns Ciss Coss Crss QG(TOT) QG(TH) QGS QGD RG VGS = 10 V, VDS = 48 V, ID = 38 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V 1261 136 85 23 1.5 6.7 7.7 1.5 W nC pF DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 38 A 0.94 0.85 23 17 6 20 nC ns 1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number NTD5865N−1G NTD5865NT4G Package DPAK (Straight Lead) (Pb−Free) DPAK (Pb−Free) Shipping† 75 Units / Rail 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD5865N 80 ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 0 1 2 3 5.0 V 4.5 V 4 5 5.5 V VGS = 10 V 6V ID, DRAIN CURRENT (A) TJ = 25°C 80 70 60 50 40 30 20 10 0 2 3 TJ = 125°C 4 TJ = −55°C 5 6 7 TJ = 25°C VDS ≥ 10 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.040 0.035 0.030 0.025 0.020 0.015 0.010 ID = 38 A TJ = 25°C 0.018 VGS = 10 V 0.016 TJ = 25°C 0.014 0.012 4 5 6 7 8 9 10 0.010 5 10 15 20 25 30 35 40 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 4. On−Resistance vs. Drain Current 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 ID = 38 A VGS = 10 V 10000 VGS = 0 V IDSS, LEAKAGE (mA) TJ = 150°C 1000 TJ = 125°C 100 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTD5865N 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 0 Crss 10 20 30 40 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 60 Coss Ciss TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V 10 QT 8 6 4 2 0 0 VDS = 48 V ID = 38 A TJ = 25°C 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) 25 Qgs Qgd Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 1000 IS, SOURCE CURRENT (A) VDD = 48 V ID = 38 A VGS = 10 V 100 t, TIME (ns) 40 35 30 25 20 15 10 5 0 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 VSD, SOURCE−TO−DRAIN VOLTAGE (V) VGS = 0 V TJ = 25°C td(off) 10 tr tf 1 1 10 RG, GATE RESISTANCE (W) td(on) 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 AVALANCHE ENERGY (mJ) VGS = 10 V SINGLE PULSE TC = 25°C 10 ms 1 ms 10 ms 100 ms 40 35 30 25 20 15 10 5 0 25 Figure 10. Diode Forward Voltage vs. Current ID = 27 A ID, DRAIN CURRENT (A) 100 10 1 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 dc 100 50 75 100 125 150 Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature TJ, STARTING JUNCTION TEMPERATURE http://onsemi.com 4 NTD5865N 10 RqJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.00001 0.0001 0.001 t, PULSE TIME (s) 0.01 0.1 1 0.1 0.01 0.000001 Figure 13. Thermal Response http://onsemi.com 5 NTD5865N PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE A −T− B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 −−− 0.89 1.27 3.93 −−− C E S A 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTD5865N PACKAGE DIMENSIONS IPAK−3 (SINGLE GAUGE) CASE 369D−01 ISSUE B B V R 4 C E Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− S −T− SEATING PLANE A 1 2 3 K F D G 3 PL J H M 0.13 (0.005) T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTD5865N/D