NTD5867NLT4G

NTD5867NL N-Channel Power MOSFET 60 V, 20 A, 39 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) VGS ±30 V Power Dissipation (RqJC) 39 mW @ 10 V 20 A 50 mW @ 4.5 V 18 A D N−Channel G TC = 25°C Steady State Pulsed Drain Current ID MAX ID TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) A 20 S 13 PD 36 W IDM 76 A TJ, Tstg −55 to 150 °C IS 20 A EAS 18 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 1 1 2 3 DPAK CASE 369AA (Surface Mount) STYLE 2 Symbol Value Unit Junction−to−Case (Drain) RqJC 3.5 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 45 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. 2 3 IPAK CASE 369D (Straight Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain 4 Drain THERMAL RESISTANCE MAXIMUM RATINGS Parameter 4 AYWW 58 67NLG Continuous Drain Current (RqJC) RDS(on) MAX V(BR)DSS 60 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter http://onsemi.com AYWW 58 67NLG • • • • 2 1 Drain 3 Gate Source 1 2 3 Gate Drain Source A = Assembly Location* Y = Year WW = Work Week 5867NL = Device Code G = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 3 1 Publication Order Number: NTD5867NL/D NTD5867NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 60 VGS = 0 V, VDS = 60 V mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 1.5 1.8 5.2 mV/°C mW VGS = 10 V, ID = 10 A 26 39 VGS = 4.5 V, ID = 10 A 33 50 VDS = 15 V, ID = 10 A 8.0 S 675 pF CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 68 47 Total Gate Charge QG(TOT) 15 Threshold Gate Charge QG(TH) 1.0 Gate−to−Source Charge QGS Gate−to−Drain Charge Total Gate Charge Gate Resistance VGS = 10 V, VDS = 48 V, ID = 20 A QGD nC 2.2 4.3 QG(TOT) VGS = 4.5 V, VDS = 48 V, ID = 20 A 7.6 nC RG 1.3 W td(on) 6.5 ns SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 10 V, VDD = 48 V, ID = 20 A, RG = 2.5 W tf 12.6 18.2 2.4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.87 TJ = 100°C 0.78 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 17 VGS = 0 V, dIs/dt = 100 A/ms, IS = 20 A QRR 1.2 V ns 13 4.0 12 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD5867NL TYPICAL PERFORMANCE CURVES 40 40 4.5 V ID, DRAIN CURRENT (AMPS) 35 4V 30 3.8 V 25 3.6 V 20 3.4 V 15 3.2 V 10 3.0 V 5 2.8 V 0 1 2 3 4 15 TJ = 125°C 10 TJ = 25°C 5 TJ = −55°C 2 3 4 5 Figure 2. Transfer Characteristics 0.040 0.030 5 4 7 6 8 9 10 0.040 TJ = 25°C 0.035 VGS = 4.5 V 0.030 VGS = 10 V 0.025 0.020 5 10 15 20 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.2 10000 VGS = 0 V ID = 20 A VGS = 10 V 1.8 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 20 Figure 1. On−Region Characteristics 0.050 2.0 25 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID = 20 A TJ = 25°C 3 30 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.060 0.020 VDS ≥ 10 V 35 0 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C ID, DRAIN CURRENT (AMPS) 10V 1.6 1.4 1.2 1.0 TJ = 150°C 1000 100 TJ = 125°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Drain Voltage http://onsemi.com 3 60 NTD5867NL TYPICAL PERFORMANCE CURVES VGS = 0 V 900 C, CAPACITANCE (pF) VGS , GATE−TO−SOURCE VOLTAGE (VOLTS) 1000 TJ = 25°C 800 Ciss 700 600 500 400 300 200 Coss 100 0 0 Crss 10 20 30 40 50 60 DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 QT 8 VGS 6 Qgs 4 2 VDS = 48 V ID = 20 A TJ = 25°C 0 0 5 15 Figure 8. Gate−To−Source Voltage vs. Total Charge 1000 20 100 tf IS, SOURCE CURRENT (AMPS) VDD = 48 V ID = 20 A VGS = 10 V t, TIME (ns) 10 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation td(off) tr 10 td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 15 10 5 0 0.5 100 100 ms 1 ms 10 ms 1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 10 ms VGS = 10 V SINGLE PULSE TC = 25°C 0.7 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current 100 10 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance I D, DRAIN CURRENT (AMPS) Qgd 20 ID = 20 A 15 10 5 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTD5867NL r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL PERFORMANCE CURVES 10 1.0 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 0.01 0.000001 t1 t2 DUTY CYCLE, D = t1/t2 0.01 SINGLE PULSE 0.00001 0.0001 t, TIME (s) 0.001 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.01 0.1 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTD5867NL−1G IPAK (Straight Lead) (Pb−Free) 75 Units / Rail NTD5867NLT4G DPAK (Pb−Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD5867NL PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD5867NL PACKAGE DIMENSIONS IPAK (STRAIGHT LEAD DPAK) CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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