NTR4101PT1H

NTR4101P, NTRV4101P MOSFET – Power, Single P-Channel, Trench, SOT-23 -20 V Features • • • • • Leading −20 V Trench for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) TYP ID MAX 70 mW @ −4.5 V −20 V −3.2 A 90 mW @ −2.5 V 112 mW @ −1.8 V P−Channel MOSFET S Applications • Load/Power Management for Portables • Load/Power Management for Computing • Charging Circuits and Battery Protection G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8.0 V ID −2.4 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C −1.7 t ≤ 10 s TA = 25°C −3.2 Steady State TA = 25°C PD t ≤ 10 s Continuous Drain Current (Note 2) Steady State Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) ID TA = 85°C TA = 25°C 0.73 −1.8 A −1.3 W tp = 10 ms IDM −18 A C = 100 pF, RS = 1500 W ESD 225 V TJ, TSTG −55 to 150 °C IS −2.4 A EAS 16 mJ Single Pulse Drain−to−Source Avalanche Energy (VGS = −8 V, IL = −1.8 Apk, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 June, 2019 − Rev. 12 TR4 MG G 1 0.42 Source Current (Body Diode) 3 Drain W PD Operating Junction and Storage Temperature MARKING DIAGRAM & PIN ASSIGNMENT 3 1.25 TA = 25°C D 1 2 SOT−23 CASE 318 STYLE 21 1 Gate 2 Source TR4 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTR4101PT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NTRV4101PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTR4101P/D NTR4101P, NTRV4101P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 170 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 Junction−to−Ambient − Steady State (Note 2) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min V(BR)DSS −20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) (VGS = 0 V, ID = −250 mA) V Zero Gate Voltage Drain Current (Note 4) (VGS = 0 V, VDS = −16 V) IDSS −1.0 mA Gate−to−Source Leakage Current (VGS = ±8.0 V, VDS = 0 V) IGSS ±100 nA −0.72 −1.2 V 70 90 112 85 120 210 ON CHARACTERISTICS Gate Threshold Voltage (Note 4) (VGS = VDS, ID = −250 mA) VGS(th) Drain−to−Source On−Resistance (VGS = −4.5 V, ID = −1.6 A) (VGS = −2.5 V, ID = −1.3 A) (VGS = −1.8 V, ID = −0.9 A) RDS(on) Forward Transconductance (VDS = −5.0 V, ID = −2.3 A) −0.4 mW gFS 7.5 S Ciss 675 pF Coss 100 Crss 75 (VGS = −4.5 V, VDS = −10 V, ID = −1.6 A) QG(tot) 7.5 Gate−to−Source Gate Charge (VDS = −10 V, ID = −1.6 A) QGS 1.2 nC Gate−to−Drain “Miller” Charge (VDS = −10 V, ID = −1.6 A) QGD 2.2 nC RG 6.5 W td(on) 7.5 ns tr 12.6 td(off) 30.2 tf 21.0 VSD −0.82 −1.2 V trr 12.8 15 ns ta 9.9 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance (VGS = 0 V, f = 1 MHz, VDS = −10 V) Reverse Transfer Capacitance Total Gate Charge Gate Resistance 8.5 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VGS = −4.5 V, VDS = −10 V, ID = −1.6 A, RG = 6.0 W) Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (VGS = 0 V, IS = −2.4 A) Reverse Recovery Time Charge Time Discharge Time (VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.6 A) Reverse Recovery Charge ns tb 3.0 ns Qrr 1008 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2 NTR4101P, NTRV4101P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 TJ = 25°C VGS = −10 V − −2.4 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 10 −2.2 V 8 6 −2.0 V 4 −1.8 V . −1.6 V 2 0 2 1 3 5 4 6 7 125°C 7 6 5 4 3 2 1 VDS ≥ 20 V 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 3 1 2 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0 0.1 VGS = −5.0 V 0.09 25°C 8 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 TJ = −55°C 9 T = 125°C 0.08 T = 25°C 0.07 0.06 T = −55°C 0.05 0.04 0.03 0.02 0.01 0 7 3 5 −ID, DRAIN CURRENT (AMPS) 1 9 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 6 TJ = 25°C VGS = −2.5 V VGS = −4.5 V 1 3 5 4 6 7 8 −ID, DRAIN CURRENT (AMPS) 2 9 10 Figure 4. On−Resistance vs. Drain Current and Temperature Figure 3. On−Resistance vs. Drain Current and Temperature 100000 VGS = 0 V ID = −1.6 A 10000 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1.0 0.8 1000 TJ = 125°C 100 10 0.6 0.4 −50 TJ = 150°C −25 0 25 50 75 100 125 150 1.0 0 TJ, JUNCTION TEMPERATURE (°C) 2 4 6 8 10 12 14 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 16 NTR4101P, NTRV4101P C, CAPACITANCE (pF) 800 4.0 TJ = 25°C VGS = 0 V QT 3.5 Ciss 3.0 2.5 600 VDS 2.0 400 VGS Qgd Qgs 1.5 1.0 Coss 200 ID = −1.6 A TJ = 25°C 0.5 0 Crss 0 2 4 6 8 12 10 14 16 18 20 0 2 4 6 Qg, TOTAL GATE CHARGE (nC) 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge 5 −IS, SOURCE CURRENT (A) VDD = −10 V ID = −1.6 A VGS = −4.5 V 100 td(off) tf tr td(on) 10 VGS = 0 V TJ = 25°C 4.5 4 3.5 3 2.5 2 1.5 1 0.5 1 1 10 0 100 0 RG, GATE RESISTANCE (OHMS) 0.2 0.4 VGS ≤ 10 V Single Pulse TC = 25°C 10 ms 100 ms 1 ms 1 10 ms 0.1 0.01 0.01 0.8 1.0 Figure 10. Diode Forward Voltage vs. Current 100 10 0.6 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance ID, DRAIN CURRENT (A) t, TIME (ns) 1000 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) RDS(on) Limit Thermal Limit Package Limit 0.1 1 dc 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 SCALE 4:1 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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