NTR4101PT1

NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com V(BR)DSS −20 V RDS(ON) TYP 70 mW @ −4.5 V 90 mW @ −2.5 V 112 mW @ −1.8 V −3.2 A ID MAX Applications • Load/Power Management for Portables • Load/Power Management for Computing • Charging Circuits and Battery Protection MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t ≤ 10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) Steady State t ≤ 10 s Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms C = 100 pF, RS = 1500 W PD IDM ESD TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value −20 ±8.0 −2.4 −1.7 −3.2 0.73 1.25 −1.8 −1.3 0.42 −18 225 −55 to 150 −2.4 260 W A V °C A °C 1 P−Channel MOSFET S Unit V V A G W D A 3 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain TR4 MG G 1 Gate 2 Source 2 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) SOT−23 CASE 318 STYLE 21 TR4 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package SOT−23 SOT−23 Pb−Free Shipping† 3000/Tape & Reel 3000/Tape & Reel THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − t < 10 s (Note 1) Junction−to−Ambient − Steady State (Note 2) Symbol RqJA RqJA RqJA Max 170 100 300 Unit °C/W NTR4101PT1 NTR4101PT1G 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 June, 2010 − Rev. 5 1 Publication Order Number: NTR4101P/D NTR4101P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) (VGS = 0 V, ID = −250 mA) Zero Gate Voltage Drain Current (Note 4) (VGS = 0 V, VDS = −16 V) Gate−to−Source Leakage Current (VGS = ±8.0 V, VDS = 0 V) ON CHARACTERISTICS Gate Threshold Voltage (Note 4) (VGS = VDS, ID = −250 mA) Drain−to−Source On−Resistance (VGS = −4.5 V, ID = −1.6 A) (VGS = −2.5 V, ID = −1.3 A) (VGS = −1.8 V, ID = −0.9 A) Forward Transconductance (VDS = −5.0 V, ID = −2.3 A) CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Gate Charge Gate−to−Drain “Miller” Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. (VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.6 A) (VGS = 0 V, IS = −2.4 A) VSD trr ta tb Qrr −0.82 12.8 9.9 3.0 1008 −1.2 15 V ns ns ns nC (VGS = −4.5 V, VDS = −10 V, ID = −1.6 A, RG = 6.0 W) td(on) tr td(off) tf 7.5 12.6 30.2 21.0 ns (VGS = −4.5 V, VDS = −10 V, ID = −1.6 A) (VDS = −10 V, ID = −1.6 A) (VDS = −10 V, ID = −1.6 A) (VGS = 0 V, f = 1 MHz, VDS = −10 V) Ciss Coss Crss QG(tot) QGS QGD RG 675 100 75 7.5 1.2 2.2 6.5 8.5 nC nC nC W pF VGS(th) RDS(on) −0.4 −0.72 −1.2 V mW V(BR)DSS IDSS IGSS −20 −1.0 ±100 V mA nA Symbol Min Typ Max Unit 70 90 112 75 85 120 210 gFS S http://onsemi.com 2 NTR4101P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 −ID, DRAIN CURRENT (AMPS) 8 6 4 . VGS = −10 V − −2.4 V −2.2 V TJ = 25°C −ID, DRAIN CURRENT (AMPS) 10 9 8 7 6 5 4 3 2 1 0 0 TJ = −55°C 25°C 125°C −2.0 V −1.8 V −1.6 V 2 0 0 1 2 3 4 5 VDS ≥ 20 V 1 2 3 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 6 6 7 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1 7 5 3 −ID, DRAIN CURRENT (AMPS) 9 T = 25°C T = −55°C VGS = −5.0 V T = 125°C 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 Figure 2. Transfer Characteristics TJ = 25°C VGS = −2.5 V VGS = −4.5 V 1 2 3 7 4 5 6 8 −ID, DRAIN CURRENT (AMPS) 9 10 Figure 3. On−Resistance vs. Drain Current and Temperature 100000 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1.0 0.8 0.6 0.4 −50 ID = −1.6 A −IDSS, LEAKAGE (nA) 10000 1000 Figure 4. On−Resistance vs. Drain Current and Temperature VGS = 0 V TJ = 150°C TJ = 125°C 100 10 1.0 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTR4101P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 800 600 400 200 0 Coss Crss 0 2 4 6 8 10 12 14 16 18 20 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 4.0 QT VGS = 0 V Ciss TJ = 25°C 3.5 3.0 VDS Qgs Qgd C, CAPACITANCE (pF) 2.5 2.0 VGS 1.5 1.0 ID = −1.6 A TJ = 25°C 0 2 4 6 Qg, TOTAL GATE CHARGE (nC) 8 0.5 0 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge 5 −IS, SOURCE CURRENT (AMPS) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1000 VDD = −10 V ID = −1.6 A VGS = −4.5 V VGS = 0 V TJ = 25°C t, TIME (ns) 100 10 td(off) tf tr td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) 100 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTR4101P PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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