NTR4170NT1G

NTR4170N Power MOSFET 30 V, 3.1 A, Single N−Channel, SOT−23 Features • • • • • Low RDS(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb−Free Device www.onsemi.com V(BR)DSS Applications • Power Converters for Portables • Battery Management • Load/Power Switch 30 V Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Steady State t ≤ 30 s t ≤ 10 s t ≤ 30 s Power Dissipation (Note 1) TA = 85°C A 2.8 PD TA = 25°C W 8.0 A TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 0.82 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 260 °C/W Junction−to−Ambient − t ≤ 30 s RqJA 153 Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). © Semiconductor Components Industries, LLC, 2007 October, 2016 − Rev. 2 1 TREMG G 2 SOT−23 CASE 318 STYLE 21 0.82 IDM Parameter 3 Drain 1 1.25 Operating Junction and Storage Temperature 2.0 A 3 PD tp = 10 ms 110 mW @ 2.5 V MARKING DIAGRAM/ PIN ASSIGNMENT 2.3 0.48 Pulsed Drain Current 2.8 A S 1.7 Steady State t ≤ 10 s 70 mW @ 4.5 V G 3.9 t ≤ 10 s t ≤ 30 s 3.1 A 3.1 ID Steady State 55 mW @ 10 V D 2.4 TA = 25°C ID MAX SIMPLIFIED SCHEMATIC − N−CHANNEL MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter RDS(on) MAX 1 1 Gate 2 Source TRE = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† NTR4170NT1G SOT−23 (Pb−Free) 3000/Tape & Reel NTR4170NT3G SOT−23 (Pb−Free) 10000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTR4170N/D NTR4170N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ ID = 250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V, TJ = 25°C VGS = 0 V, VDS = 24 V, TJ = 125°C 1.0 5.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "12 V $100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.4 V Negative Threshold Temperature Coefficient VGS(TH) /TJ Drain−to−Source On−Resistance RDS(on) OFF CHARACTERISTICS V 26.4 mV/°C ON CHARACTERISTICS (Note 3) Forward Transconductance 0.6 1.0 3.3 gFS mV/°C VGS = 10 V, ID = 3.2 A 45 55 mW VGS = 4.5 V, ID = 2.8 A 50 70 VGS = 2.5 V, ID = 2.0 A 64 110 VDS = 5.0 V, ID = 3.2 A 8.0 S 432 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 0 V, f = 1.0 MHz, VDS = 15 V 53.6 37.1 nC 4.76 VGS = 4.5 V, VDS = 15 V, ID = 3.2 A 0.3 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.4 RG 3.8 W 6.4 ns Gate Resistance 1.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDD = 15 V, ID = 3.2 A, RG = 6.2 W tf 9.9 15.1 3.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Discharge Time Reverse Recovery Charge ta tb VGS = 0 V, IS = 1.0 A, TJ = 25°C 0.75 8.0 VGS = 0 V, IS = 1.0 A, dISD/dt = 100 A/ms QRR 1.0 V ns 5.1 2.9 2.9 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surface−mounted on FR4 board using 1 in sq pad size (CU area = 1.127 in sq [2 oz] including traces). 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTR4170N TYPICAL CHARACTERISTICS 10 V 2.5 V 1.8 V 2.5 2.0 1.7 V 1.5 1.0 1.6 V 0.5 1.5 V VGS = 1.4 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 2.0 V 0 0.5 1.0 1.5 2.0 2.5 5.0 4.0 3.0 TJ = 125°C 2.0 TJ = 25°C 1.0 0 3.0 TJ = −55°C 0.6 0.8 1.2 1.6 1.4 1.8 2.0 2.2 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 3.2 A TJ = 25°C 0.10 0.08 0.06 0.04 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.08 2.4 TJ = 25°C 0.07 VGS = 2.5 V 0.06 VGS = 4.5 V 0.05 VGS = 10 V 0.04 0.03 0.02 0.01 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.6 VGS = 0 V 1.4 ID = 3.2 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.12 0.02 VDS ≥ 10 V 6.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 3.0 7.0 TJ = 25°C 4.5 V ID, DRAIN CURRENT (A) 3.5 1.2 1.0 TJ = 150°C 1000 TJ = 125°C 100 0.8 0.6 −50 −25 0 25 50 75 100 125 150 10 5.0 TJ, JUNCTION TEMPERATURE (°C) 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTR4170N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C 600 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 700 500 Ciss 400 300 200 100 0 Coss Crss 0 4.0 8.0 12 16 20 28 30 24 3.0 2.5 Qgs 2.0 Qgd 1.5 1.0 ID = 3.2 A TJ = 25°C 0.5 0 0 1.0 2.0 3.0 4.0 5.0 Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 3.0 100 IS, SOURCE CURRENT (A) t, TIME (ns) 3.5 QG, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 3.2 A VGS = 4.5 V td(off) tf tr 10 td(on) 1.0 QT 4.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1.0 4.5 10 2.0 1.5 1.0 0.5 0 100 VGS = 0 V TJ = 25°C 2.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current www.onsemi.com 4 NTR4170N PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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