NTR4503NT1G

NTR4503N, NVTR4503N MOSFET – Power, Single, N-Channel, SOT-23 30 V, 2.5 A Features • • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint (3 x 3 mm) NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) TYP 85 mW @ 10 V 30 V N−Channel D • DC−DC Conversion • Load/Power Switch for Portables • Load/Power Switch for Computing G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 2.0 A Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C 1.5 t ≤ 10 s TA = 25°C 2.5 Power Dissipation (Note 1) Steady State TA = 25°C PD 0.73 W Continuous Drain Current (Note 2) Steady State TA = 25°C ID 1.5 A Power Dissipation (Note 2) Pulsed Drain Current TA = 85°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Peak Source Current (Diode Forward) tp = 10 ms Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 2.5 A 105 mW @ 4.5 V Applications Parameter ID MAX 1.1 PD 0.42 W IDM 10 A TJ, Tstg −55 to 150 °C IS 2.0 A ISM 4.0 A TL 260 °C S 3 MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain 1 2 SOT−23 CASE 318 STYLE 21 TR3 M G TR3 MG G 1 Gate 2 Source = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping† NTR4503NT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NVTR4503NT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003 June, 2019 − Rev. 8 1 Publication Order Number: NTR4503N/D NTR4503N, NVTR4503N THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) Parameter RqJA 170 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 Junction−to−Ambient − Steady State (Note 2) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size. 2. Surface−mounted on FR4 board using the minimum recommended pad size. www.onsemi.com 2 NTR4503N, NVTR4503N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 mA 30 36 IDSS VGS = 0 V, VDS = 24 V 1.0 VGS = 0 V, VDS = 24 V, TJ = 125°C 10 IGSS VDS = 0 V, VGS = "20 V "100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.75 3.0 V Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 2.5 A 85 110 mW VGS = 4.5 V, ID = 2.0 A 105 140 VDS = 4.5 V, ID = 2.5 A 5.3 S 135 pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V mA ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1.0 CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 0 V, f = 1.0 MHz, VDS = 24 V 52 15 130 250 42 75 13 25 7.0 Total Gate Charge QG(TOT) 3.6 Threshold Gate Charge QG(TH) 0.3 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.7 Total Gate Charge QG(TOT) 1.9 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 10 V, VDS = 15 V, ID = 2.5 A VGS = 4.5 V, VDS = 24 V, ID = 2.5 A pF nC 0.6 nC 0.3 0.6 0.9 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) 5.8 12 5.8 10 14 25 tf 1.6 5.0 td(on) 4.8 tr td(off) tr td(off) VGS = 10 V, VDD = 15 V, ID = 1 A, RG = 6 W VGS = 10 V, VDD = 24 V, ID = 2.5 A, RG = 2.5 W tf ns ns 6.7 13.6 1.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 2.0 A 0.85 VGS = 0 V, IS = 2.0 A, dIS/dt = 100 A/ms 9.2 1.2 ns V 4.0 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTR4503N, NVTR4503N TYPICAL PERFORMANCE CURVES 8 4V 3.6 V 6 3.4 V 3.2 V 4 3V 2 2.8 V 2.6 V 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS ≥ 10 V 3.8 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 10 V 6V 5V 4.5 V 4.2 V 2 1 3 8 4 4 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 2 ID = 2.5 A TJ = 25°C 0.25 0.2 0.15 0.1 0.05 0 4 6 3 5 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 2 10 TJ = 25°C 0.11 VGS = 4.5 V 0.10 0.09 0.08 VGS = 10 V 0.07 2 3 6 5 4 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 1.8 VGS = 0 V IDSS, LEAKAGE (nA) ID = 2.5 A VGS = 10 V 1.4 1.2 1.0 TJ = 150°C 100 10 TJ = 100°C 0.8 0.6 −50 6 0.12 Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.3 1.6 100°C 25°C 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 10 −25 0 25 50 75 100 125 150 1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTR4503N, NVTR4503N VGS = 0 V VDS = 0 V TJ = 25°C C, CAPACITANCE (pF) Ciss VDS QG 10 200 Crss 100 Coss 0 10 15 15 5 VGS 0 VDS 5 10 15 20 30 25 VGS 5 QGS 0 0 0 1 2 3 QG, TOTAL GATE CHARGE (nC) IS, SOURCE CURRENT (AMPS) t, TIME (ns) 3 td(off) tf 10 1 td(on) tr 1 10 VGS = 0 V TJ = 25°C 2 1 0 0.3 100 4 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation VDD = 24 V ID = 2.5 A VGS = 10 V 5 QGD ID = 2.5 A TJ = 25°C GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 10 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (OHMS) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current www.onsemi.com 5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 300 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative