NTR4503N

NTR4503N Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint (3 x 3 mm) Pb−Free Package is Available V(BR)DSS http://onsemi.com RDS(on) TYP 85 mW @ 10 V 105 mW @ 4.5 V ID MAX 2.5 A Applications • DC−DC Conversion • Load/Power Switch for Portables • Load/Power Switch for Computing MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Current (Note 1) Steady State t ≤ 10 s Power Dissipation (Note 1) Continuous Drain Current Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) Steady State Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C tp = 10 ms C = 100 pF, RS = 1500 W PD IDM ESD TJ, Tstg IS TL PD ID Symbol VDSS VGS ID Value 30 ±20 2.0 1.5 2.5 0.73 1.5 1.1 0.42 6.0 125 −55 to 150 2.0 260 W W A Unit V V A 30 V N−Channel D G S MARKING DIAGRAM/ PIN ASSIGNMENT 3 3 Drain 1 2 TR3 SOT−23 CASE 318 STYLE 21 M 2 Source A V °C A °C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 1 Gate TR3 M = Specific Device Code = Date Code Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device NTR4503NT1 NTR4503NT1G Package SOT−23 SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − t < 10 s (Note 1) Junction−to−Ambient − Steady State (Note 2) Symbol RqJA RqJA RqJA Max 170 100 300 Unit °C/W NTR4503NT3G 10000/Tape & Reel 1. Surface−mounted on FR4 board using 1 in sq pad size. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 March, 2005 − Rev. 3 Publication Order Number: NTR4503N/D NTR4503N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS VGS = 0 V, ID = 250 mA VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = 24 V, TJ = 125°C Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Drain−to−Source On−Resistance VGS(TH) RDS(on) () VGS = VDS, ID = 250 mA VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 2.0 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Ciss Coss Crss Ciss Coss Crss QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 24 V, .5 V, V, ID = 2.5 A VGS = 10 V, VDS = 15 V, V, DS V, ID = 2.5 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V VGS = 0 V, f = 1.0 MHz, VDS = 15 V 135 52 15 130 42 13 3.6 0.3 0.6 0.7 1.9 0.3 0.6 0.9 nC 250 75 25 7.0 nC pF pF gFS VDS = 4.5 V, ID = 2.5 A 1.0 1.75 85 105 5.3 3.0 110 140 S V mW IGSS VDS = 0 V, VGS = "20 V 30 36 1.0 10 "100 nA V mA Symbol Test Conditions Min Typ Max Units SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr td(off) tf VGS = 10 V, VDD = 24 V, V, V, ID = 2.5 A, RG = 2.5 W VGS = 10 V, VDD = 15 V, V, V, ID = 1 A, RG = 6 W 5.8 5.8 14 1.6 4.8 6.7 13.6 1.8 12 10 25 5.0 ns ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Reverse Recovery Charge VSD tRR QRR VGS = 0 V, IS = 2.0 A VGS = 0 V, IS = 2.0 A, .0 A, dIS/dt = 100 A/ms 0.85 9.2 4.0 1.2 V ns nC 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTR4503N TYPICAL PERFORMANCE CURVES 10 ID, DRAIN CURRENT (AMPS) 10 V 6V 5V 4.5 V 4.2 V 4V TJ = 25°C VDS ≥ 10 V ID, DRAIN CURRENT (AMPS) 8 3.8 V 3.6 V 3.4 V 3.2 V 3V 8 6 4 4 25°C 100°C 2 0 0 1 2 3 2.8 V 2.6 V 0 4 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ = −55°C 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 6 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.3 0.25 0.2 0.15 0.1 0.05 0 2 3 4 6 5 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 10 ID = 2.5 A TJ = 25°C 0.12 Figure 2. Transfer Characteristics TJ = 25°C 0.11 VGS = 4.5 V 0.10 0.09 0.08 VGS = 10 V 0.07 2 3 4 5 6 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.8 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 −50 1 −25 0 25 50 75 100 125 150 ID = 2.5 A VGS = 10 V IDSS, LEAKAGE (nA) 100 1000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 10 TJ = 100°C 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTR4503N TYPICAL PERFORMANCE CURVES VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 300 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 15 VDS QG VGS 5 QGS QGD ID = 2.5 A TJ = 25°C 0 0 1 2 3 QG, TOTAL GATE CHARGE (nC) 4 15 C, CAPACITANCE (pF) 200 Crss 10 10 100 Coss 0 10 5 0 5 VGS 0 VDS 5 10 15 20 25 30 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (AMPS) VDD = 24 V ID = 2.5 A VGS = 10 V t, TIME (ns) td(off) tf 10 td(on) tr 3 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 2 1 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTR4503N PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 A L 3 1 2 BS V G C D H K J DIM A B C D G H J K L S V STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTR4503N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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