DATA SHEET
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General Purpose
Transistors
COLLECTOR
3
NPN Silicon
1
BASE
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
2
EMITTER
Features
3
• S and NSV Prefixes for Automotive and Other Applications
•
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
45
V
Collector − Base Voltage
VCBO
50
V
Emitter − Base Voltage
VEBO
5.0
V
IC
500
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
1
PD
RqJA
6x M G
G
1
6x
M
G
= Device Code
x = A, B, or C
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
PD
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−65 to +150
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 1997
October, 2021 − Rev. 17
1
Publication Order Number:
BC817−16LT1/D
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
45
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = 10 mA)
V(BR)CES
50
−
−
V
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO
5.0
−
−
V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ICBO
−
−
−
−
100
5.0
nA
mA
100
160
250
40
−
−
−
−
250
400
600
−
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
hFE
BC817−16, SBC817−16
BC817−25, SBC817−25
BC817−40, SBC817−40
−
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
−
−
0.7
V
Base −Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
VBE(on)
−
−
1.2
V
fT
100
−
−
MHz
Cobo
−
10
−
pF
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Specific Marking
Package
6A
SOT−23
(Pb−Free)
BC817−16LT1G
NSVBC817−16LT1G
BC817−16LT3G
BC817−25LT1G
BC817−25LT3G
3000 / Tape & Reel
SOT−23
(Pb−Free)
6B
10,000 / Tape & Reel
SBC817−25LT3G
BC817−40LT1G
SBC817−40LT1G
BC817−40LT3G
3000 / Tape & Reel
10,000 / Tape & Reel
SBC817−16LT3G
SBC817−25LT1G
Shipping†
3000 / Tape & Reel
SOT−23
(Pb−Free)
6C
10,000 / Tape & Reel
SBC817−40LT3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
300
1
hFE, DC CURRENT GAIN
200
25°C
−55°C
100
0
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
150°C
0.001
0.01
0.01
0.1
1
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
−55°C
IC/IB = 10
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.001
IC, COLLECTOR CURRENT (A)
0.9
0.2
−55°C
0.1
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.01
1
0.1
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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3
1
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
+1
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
Figure 6. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
Figure 7. Temperature Coefficients
100
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitances
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4
100
1000
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L
500
1
hFE, DC CURRENT GAIN
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
400
300
25°C
200
−55°C
100
0
0.001
0.01
0.001
0.01
0.1
1
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
−55°C
IC/IB = 10
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
−55°C
IC, COLLECTOR CURRENT (A)
0.9
0.2
0.1
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.01
1
0.1
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
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5
1000
1
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
+1
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
Figure 14. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
Figure 15. Temperature Coefficients
100
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Capacitances
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6
100
1000
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L
1
700
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
VCE = 1 V
500
25°C
400
300
−55°C
200
100
0
0.001
0.01
0.001
0.01
0.1
1
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
−55°C
IC/IB = 10
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.01
IC, COLLECTOR CURRENT (A)
0.9
0.2
−55°C
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
25°C
0.1
0.001
1
0.1
IC/IB = 10
VCE = 1 V
TA = 25°C
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 21. Current Gain Bandwidth Product
vs. Collector Current
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7
1000
1
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
0.8
0.6
0.4
IC = 10 mA
100 mA
300 mA
500 mA
0.2
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
+1
qVC for VCE(sat)
0
-1
qVB for VBE
-2
100
1
Figure 22. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
Figure 23. Temperature Coefficients
100
C, CAPACITANCE (pF)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L
Cib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 24. Capacitances
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8
100
1000
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L,
SBC817−40L
1
1 ms
10 ms
100 ms
1s
Thermal Limit
IC (A)
0.1
0.01
Single Pulse Test @ TA = 25°C
0.001
0.01
0.1
1
VCE (Vdc)
10
Figure 25. Safe Operating Area
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9
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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