2SD1119GRL

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification ■ Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter ■ Absolute Maximum Ratings Ta = 25°C ■ Marking Symbol: T di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d ■ Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 40 V Collector-emitter voltage (Base open) VCEO 25 V Emitter-base voltage (Collector open) VEBO 7 V 3 A Collector current IC Peak collector current ICP Collector power dissipation * PC Junction temperature Tj Storage temperature Tstg 5 A 1 W 150 °C −55 to +150 °C cm2 ue Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion Parameter ce /D isc on tin ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 25 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V ICBO VCB = 10 V, IE = 0 an Collector-base cutoff current (Emitter open) Ma int en Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Transition frequency hFE1 *2 VCE = 2 V, IC = 0.5 A 230 hFE2 VCE = 2 V, IC = 2 A 150 VCE(sat) IC = 3 A, IB = 0.1 A VCB = 6 V, IE = −50 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) VCB = 20 V, IE = 0, f = 1 MHz Cob 0.1 µA 600  1 V 150 MHz 50 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE1 230 to 380 340 to 600 Publication date: September 2007 SJD00339AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1119G PC  Ta IC  VCE Ta = 25°C IB = 7 mA 2.0 0.6 1.6 5 mA 4 mA 1.2 VCE = 2 V 5 6 mA Collector current IC (A) 0.8 6 3 mA Collector current IC (A) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.0 IC  VBE 2.4 0.4 0.4 4 3 80 100 120 140 160 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) Ta = 75°C 25°C −25°C 0.01 0.1 1 10 fT  I E int en an VCB = 6 V Ta = 25°C Ma 300 200 100 0 − 0.01 − 0.1 −1 Emitter current IE (A) 1.2 1.6 2.0 0 2.4 0 25°C Ta = −25°C 75°C 0.1 0.01 0.01 −10 0.1 1 10 Collector current IC (A) IE = 0 f = 1 MHz Ta = 25°C 80 60 40 20 0 1 10 Collector-base voltage VCB (V) SJD00339AED 1.2 1.6 100 2.0 hFE  IC VCE = 2 V 500 400 Ta = 75°C 300 25°C −25°C 200 100 0 0.01 0.1 1 Collector current IC (A) Cob  VCB 100 0.8 600 10 1 0.4 Base-emitter voltage VBE (V) IC / IB = 30 ce /D isc on tin Collector current IC (A) 400 0.8 VBE(sat)  IC 1 0.001 0.01 0.4 100 IC / IB = 30 0.1 0 Collector-emitter voltage VCE (V) VCE(sat)  IC 10 0 Forward current transfer ratio hFE 60 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 40 −25°C 1 1 mA ue 20 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 Ambient temperature Ta (°C) Transition frequency fT (MHz) 2 mA 0.2 0 2 0.8 25°C Ta = 75°C M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) 1.2 10 ±0.20 1.60 ±0.20 1 0.40 ±0.08 1.50 ±0.10 3.00 ±0.15 1.50 ±0.10 2 0.50 ±0.08 ±0.10 ±0.10 SJD00339AED ±0.10 di p Pl lan nclu ea e de se pla m d m 1.00 s ne ain ain foll 2.60 4.00 htt visit d d te te ow p:/ fo /w llo dis isc nan nan ing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro2.50 co L a d t ty du n.p bo yp pe (5°) ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at 0.50 max. i o / n. ue (5°) ce /D isc on tin an en int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1119G MiniP3-F2 Unit: mm 4.50 ±0.10 3 0.41 ±0.03 (45°) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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