2SD1119

S MD Type Silicon NPN epitaxial planar type 2SD1119 Transistors Features Low collector-emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 25 7 3 5 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCEO VEBO ICBO hFE Testconditons IC = 1 mA, IB = 0 IE = 10 ìA, IC = 0 VCB = 10 V, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A VCE(sat) IC = 3 A, IB = 0.1 A fT Cob VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 150 50 230 150 1 V MHz pF Min 25 7 0.1 600 Typ Max Unit V V ìA hFE Classification Marking Rank hFE Q 230 380 T R 340 600 www.kexin.com.cn 1