2SD1119

2SD1119 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value 40 25 7 3 500 150 -55-150 Units V V V A mW ℃ ℃ TRANSISTOR (NPN) FEATURES Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the low voltage power supply. 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob VCE=2V, IC=2A IC=3A, IB=0.1A VCE=6V, IC=50mA, f=200MHz VCB=20V, f=1MHz 150 50 150 1 V MHz pF Test conditions MIN 40 25 7 0.1 0.1 230 600 TYP MAX UNIT V V V μA μA IC =100μA, IE=0 IC =1mA, IB=0 IE=10μA, IC=0 VCB=10V, IE=0 VEB=6V, IC=0 VCE=2V, IC=500mA CLASSIFICATION OF Rank Range Marking １　 JinYu hFE(1) Q 230-380 TQ R 340-600 TR semiconductor www.htsemi.com 2SD1119 ２　 JinYu semiconductor www.htsemi.com