N04Q1630C2BT-70C

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04Q16yyC2B Advance Information 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The 4Mb SRAM is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves active operating power and the dual power supply rails allow very low voltage operation while maintaining 3V I/O capability. The device can operate over a very wide temperature range of 0oC to +70oC for the lowest power and is also available in the industrial range of -40oC to +85oC. The devices are available in standard BGA and TSOP packages. The devices are also available as Known Good Die (KGD) for embedded package applications. Features • Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V 2.3V - 2.7V 2.7V - 3.6V • Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ 2.5V Vcc with 3V VccQ • Very low standby current 50nA typical for 1.2V operation • Very low operating current 400µA typical for 1.2V operation at 1µs • Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Automatic power down to standby mode • BGA, TSOP and KGD options • RoHS Compliant Product Options Part Number N04Q1612C2Bx-15C N04Q1618C2Bx-15C N04Q1618C2Bx-70C N04Q1625C2Bx-15C N04Q1630C2Bx-70C I/O x16 x16 x16 x16 x16 Typical Standby Current 50nA 50nA 200nA 800nA 800nA Vcc (V) 1.2 1.8 2.5 3.0 VccQ (V) 1.2, 1.8, 3 1.8, 2.5, 3 2.5, 3 3.0 Speed (nS) 150ns 150ns 70ns 150ns 70ns Typical Operating Operating Current Temperature 0.4 mA @ 1MHz 0.4 mA @ 1MHz 0.6 mA @ 1MHz 0.6 mA @ 1MHz 2.2mA @ 1MHz 0oC to +70oC Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 1 N04Q16yyC2B NanoAmp Solutions, Inc. Pin Configurations (4Mb) Advance Information A4 A3 A2 A1 A0 CE1 I/O0 I/O1 I/O2 I/O3 VCCQ VSSQ I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 CE2 A8 A9 A10 A11 A17 1 A B C D E F G H LB I/O8 I/O9 2 OE UB I/O10 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC VSSQ I/O11 VCCQ I/O12 I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) TSOP II Pin Descriptions Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS VSSQ NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Core Power Power for I/O Core Ground Ground for I/O Not Connected Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 2 N04Q16yyC2B NanoAmp Solutions, Inc. Functional Block Diagram Address Inputs (A1 - A4) Advance Information Word Address Decode Logic Address Inputs (A0, A5 - A17) Page Address Decode Logic 4Mb RAM Array Input/ Output I/O0 - I/O7 Mux and Buffers I/O8 - I/O15 Word Mux CE1 CE2 WE OE UB LB Control Logic Functional Description CE1 H X L L L L CE2 X L H H H H WE X X X L H H OE X X X X3 L H UB1 X X H L1 L1 L1 LB1 X X H L1 L 1 I/O0 - I/O151 High Z High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Standby Write3 Read Active POWER Standby Standby Standby Active Active Active L1 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF 1. These parameters are verified in device characterization and are not 100% tested Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 3 N04Q16yyC2B NanoAmp Solutions, Inc. Absolute Maximum Ratings1 Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER Rating –0.3 to VCC+0.3 –0.3 to 4 500 –40 to 125 -40 to +85 260 C, 10sec o Advance Information Unit V V mW o o o C C C 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Item Symbol Device N04Q1612... Core Supply Voltage VCC N04Q1618... N04Q1625... N04Q1630... N04Q1612... I/O Supply Voltage VCCQ N04Q1618... N04Q1625... N04Q1630... Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current VIH VIL VOH VOL ILI ILO IOH = -100uA IOL = 100uA VIN = 0 to VCC OE = VIH or Chip Disabled Conditions 1.2V Core Device 1.8V Core Device 2.5V Core Device 3V Core Device 1.2V Core Device 1.8V Core Device 2.5V Core Device 3V Core Device Min. 1.1 1.65 2.3 2.7 1.1 1.65 2.3 2.7 0.8 x VCCQ –0.3 VCC–0.2 0.2 0.5 0.5 Typ 1.2 1.8 2.5 3.0 Max 1.3 1.95 2.8 3.6 3.3 3.3 3.3 3.6 VCC+0.3 0.2 x VCCQ V V µA µA V V V Unit Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 4 N04Q16yyC2B NanoAmp Solutions, Inc. Power Consumption (TA = 0oC - 70oC) Device PN Standby Current2 N04Q1612C2Bx15C Read/Write Current3 Page Mode Current Isb Icc Iccp Chip Disabled VCC = 1.3V, VIN = VCC or 0 Chip Enabled, IOUT = 0 VCC=1.3V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=1.3V, VIN=VIH or VIL Chip Disabled VCC = 1.9V, VIN = VCC or 0V Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL Chip Disabled VCC = 1.9V, VIN = VCC or 0 Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=1.9V, VIN=VIH or VIL Chip Disabled VCC = 2.8V, VIN = VCC or 0 Chip Enabled, IOUT = 0 VCC= 2.8V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC= 2.8V, VIN=VIH or VIL Chip Disabled VCC = 3.6V, VIN = VCC or 0 Chip Enabled, IOUT = 0 VCC= 3.6V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC= 3.6V, VIN=VIH or VIL Advance Information Speed Typ1 50 Max 500 0.5 3 100 450 nA mA µA 1us 150ns 1us 150ns 0.4 2 80 300 Standby Current N04Q1618C2Bx15C Read/Write Current Page Mode Current Isb Icc Iccp 50 1us 150ns 1us 150ns 0.4 2 80 400 500 0.5 3 100 500 nA mA µA Standby Current N04Q1618C2Bx70C Read/Write Current Page Mode Current Isb Icc Iccp 0.2 1us 70ns 1us 70ns 0.6 6 0.1 0.8 1.5 0.9 7 0.2 1 µA mA mA Standby Current N04Q1625C2Bx15C Read/Write Current Page Mode Current Isb Icc Iccp 0.8 1us 150ns 1us 150ns 0.6 3 0.1 1.5 1.0 1.0 4 0.2 2 µA mA mA Standby Current N04Q1630C2Bx70C Read/Write Current Page Mode Current Isb Icc Iccp 0.8 1us 70ns 1us 70ns 2.2 8.5 0.5 2 4 3 10 0.6 1.5 µA mA mA 1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested. 2. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS. This applies to all ISB values. 3. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. This applies to all Icc and Iccp values. Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 5 N04Q16yyC2B NanoAmp Solutions, Inc. Power Savings with Page Mode Operation (WE = VIH) Advance Information Page Address (A0, A5-A17) Open page ... Word Address (A1-A4) Word 1 Word 2 Word 16 CE1 CE2 OE LB, UB Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 16-bit words of data are read from the open page. By treating addresses A1 - A4 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 6 N04Q16yyC2B NanoAmp Solutions, Inc. Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature 0.1VCC to 0.9 VCC 5ns 0.5 VCC CL = 30pF 0 to +70oC Advance Information Timing Item Read Cycle Time Address Access Time Page Mode Address Access Time Chip Enable to Valid Output Output Enable to Valid Output Byte Select to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Byte Select to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Byte Select Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Byte Select to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol tRC tAA tAAP tCO tOE tLB, tUB tLZ tOLZ tLBZ, tUBZ tHZ tOHZ tLBHZ, tUBHZ tOH tWC tCW tAW tLBW, tUBW tWP tAS tWR tWHZ tDW tDH tOW 40 0 5 10 5 10 0 0 0 10 70 50 50 50 40 0 0 20 100 0 5 20 20 20 -70 Min. 70 70 35 70 35 70 10 5 10 0 0 0 10 150 120 120 120 100 0 0 20 20 20 20 Max. Min. 150 150 75 150 75 150 -150 Max. ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 7 N04Q16yyC2B NanoAmp Solutions, Inc. Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) tRC Address tAA tOH Advance Information Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE=VIH) tRC Address tAA tHZ CE1 tCO CE2 tLZ tOE OE tOLZ tLB, tUB LB, UB tLBLZ, tUBLZ Data Out High-Z tLBHZ, tUBHZ Data Valid tOHZ Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 8 N04Q16yyC2B NanoAmp Solutions, Inc. Timing Waveform of Page Mode Read Cycle (WE = VIH) tRC Page Address tAA Word Address tHZ CE1 tCO CE2 tOHZ tAAP Advance Information tOE OE tOLZ LB, UB tLBLZ, tUBLZ Data Out High-Z tLB, tUB tLBHZ, tUBHZ Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 9 N04Q16yyC2B NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control) tWC Address tAW CE1 tCW CE2 tLBW, tUBW LB, UB tAS WE tDW High-Z Data In tWHZ Data Out High-Z tDH tWP tWR Advance Information Data Valid tOW Timing Waveform of Write Cycle (CE1 Control) tWC Address tAW CE1 (for CE2 Control, use inverted signal) LB, UB tWP WE tDW Data In tLZ Data Out tWHZ tDH tCW tAS tLBW, tUBW tWR Data Valid High-Z Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 10 N04Q16yyC2B NanoAmp Solutions, Inc. 44-Lead TSOP II Package (T44) Advance Information 18.41±0.13 10.16±0.13 11.76±0.20 0.80mm REF 0.45 0.30 SEE DETAIL B DETAIL B 1.10±0.15 0o-8o 0.20 0.00 0.80mm REF Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 11 N04Q16yyC2B NanoAmp Solutions, Inc. Ball Grid Array Package A1 BALL PAD CORNER (3) D 0.28±0.05 1.24±0.10 1. 0.35±0.05 DIA. E 2. SEATING PLANE - Z 0.15 Z 0.05 TOP VIEW SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD MAXIMUM SOLDER BALL DIAMETER. CORNER PARALLEL TO PRIMARY Z. 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. K TYP J TYP e Z Advance Information SD e SE BOTTOM VIEW Dimensions (mm) e = 0.75 D 6±0.10 E SD 8±0.10 0.375 SE 0.375 J 1.125 K 1.375 BALL MATRIX TYPE FULL Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 12 N04Q16yyC2B NanoAmp Solutions, Inc. Ordering Information Advance Information N04Q16 XX C2B X - XX X Temperature C = 0oC - 70oC I = -40oC - 85oC Performance 70 = 70ns 15 = 150ns T = 44-pin TSOP II T2 = 44-pin TSOP II Green (RoHS Compliant) B = 48-ball BGA B2 = 48-ball BGA Green (RoHS Compliant) W = Wafer (KGD) 12 = 1.2V 18 = 1.8V 25 = 2.5V 30 = 3.0V Package Type Operating Voltage Q = Low Power SRAM with VccQ for dual rail operation Revision History Revision A B Date October 2005 February 2006 Change Description Initial Advanced Release Raised maximum Vcc to 3.6V for 3V device Added green packages Changed dual rail to ‘Q’ part designator © 2005-2006 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments. Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 13