NESG2021M16-A

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V • 6-pin lead-less minimold (M16, 1208 PKG) ORDERING INFORMATION Part Number NESG2021M16 Order Number NESG2021M16-A Package 6-pin lead-less minimold (M16, 1208 PKG) NESG2021M16-T3 NESG2021M16-T3-A (Pb-Free) Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Ptot Note Ratings 13.0 5.0 1.5 35 175 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10393EJ03V0DS (3rd edition) Date Published September 2009 NS Printed in Japan The mark shows major revised points. 2003, 2009 The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NESG2021M16 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) Noise Figure (2) Associated Gain (1) Associated Gain (2) Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power fT ⏐S21e⏐ NF NF Ga Ga Cre Note 2 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 5 mA − − 130 − − 190 100 100 260 nA nA − VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 3 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC (set) = 12 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt 20 17.0 − − 15.0 − − 20.0 − − 25 19.0 0.9 1.3 18.0 10.0 0.1 22.5 9 − − 1.2 − − − 0.2 − − − GHz dB dB dB dB dB pF dB dBm MSG Note 3 PO (1 dB) Output 3rd Order Intercept Point OIP3 VCE = 3 V, IC (set) = 12 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt 17 dBm Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB/YFB zE 130 to 260 2 Data Sheet PU10393EJ03V0DS NESG2021M16 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 300 250 200 175 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 0.3 f = 1 MHz 0.2 150 100 50 0.1 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (°C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 VCE = 1 V Collector Current IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 VCE = 2 V Collector Current IC (mA) 0.001 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 VCE = 3 V Collector Current IC (mA) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 35 30 25 20 15 10 5 IB = 20 μ A 200 μ A 180 μ A 160 μ A 140 μ A 120 μ A 100 μ A 80 μ A 60 μ A 40 μ A Collector Current IC (mA) 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 5 6 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10393EJ03V0DS 3 NESG2021M16 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 1 V 1 000 VCE = 2 V DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain hFE 100 DC Current Gain hFE 100 10 0.1 1 10 100 10 0.1 1 10 100 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 3 V DC Current Gain hFE 100 10 0.1 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10393EJ03V0DS NESG2021M16 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 Gain Bandwidth Product fT (GHz) 25 20 15 10 5 0 1 Gain Bandwidth Product fT (GHz) VCE = 1 V, f = 2 GHz VCE = 2 V, f = 2 GHz 25 20 15 10 5 0 1 10 Collector Current IC (mA) 100 10 Collector Current IC (mA) 100 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 35 30 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 1 V, IC = 10 mA MSG 25 20 15 10 5 0 0.1 |S21e|2 MAG MSG MAG Gain Bandwidth Product fT (GHz) VCE = 3 V, f = 2 GHz 25 20 15 10 5 0 1 10 Collector Current IC (mA) 100 1 10 100 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MAG MSG MAG INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MAG MSG MSG MAG VCE = 3 V, IC = 10 mA VCE = 2 V, IC = 10 mA MSG Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10393EJ03V0DS 5 NESG2021M16 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 VCE = 1 V, f = 1 GHz 30 25 20 15 10 5 0 MSG MAG VCE = 1 V, f = 2 GHz MSG MAG |S21e|2 10 5 0 |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 20 15 10 |S21e|2 5 0 VCE = 1 V, f = 5 GHz 30 25 20 15 10 5 0 VCE = 1 V, f = 3 GHz MSG MAG MSG MAG |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 20 15 10 5 0 |S21e|2 VCE = 2 V, f = 2 GHz 30 25 20 15 10 5 0 VCE = 2 V, f = 1 GHz MSG MAG MSG MAG |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10393EJ03V0DS NESG2021M16 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 VCE = 2 V, f = 3 GHz MSG MAG 30 25 20 15 10 VCE = 2 V, f = 5 GHz MSG MAG |S21e|2 10 5 0 |S21e|2 5 0 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 VCE = 3 V, f = 1 GHz MSG MAG 30 25 20 15 10 5 0 VCE = 3 V, f = 2 GHz MSG MAG |S21e|2 |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 20 15 10 5 0 VCE = 3 V, f = 5 GHz 30 25 20 15 10 5 0 VCE = 3 V, f = 3 GHz MSG MAG MSG MAG |S21e|2 |S21e|2 1 10 Collector Current IC (mA) 100 1 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. Data Sheet PU10393EJ03V0DS 7 NESG2021M16 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 VCE = 3 V, f = 1 GHz, Icq = 12 mA Collector Current IC (mA) Output Power Pout (dBm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 20 VCE = 3 V, f = 2 GHz, Icq = 12 mA 15 Pout 10 30 Collector Current IC (mA) Collector Current IC (mA) Output Power Pout (dBm) 50 15 Pout 10 40 40 30 5 IC 0 –5 –25 20 5 IC 0 –5 –20 20 10 10 –20 –15 –10 –5 0 0 –15 –10 –5 0 0 5 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 VCE = 3 V, f = 3 GHz, Icq = 12 mA Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 20 VCE = 3 V, f = 5.2 GHz, Icq = 12 mA Collector Current IC (mA) 50 15 Pout 40 15 40 10 30 10 Pout 30 5 IC 0 –5 –20 20 5 IC 20 10 0 –5 –15 10 –15 –10 –5 0 0 5 –10 –5 0 5 0 10 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 8 Data Sheet PU10393EJ03V0DS NESG2021M16 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 4 30 5 4 Ga NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 Associated Gain Ga (dB) Noise Figure NF (dB) 3 Noise Figure NF (dB) Ga 20 3 20 2 NF VCE = 1 V, f = 1 GHz 1 10 Collector Current IC (mA) 15 2 15 1 10 5 100 1 NF 10 VCE = 2 V, f = 1 GHz 5 100 0 0 1 10 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 5 30 25 Ga 20 15 10 5 NF 10 Collector Current IC (mA) VCE = 1 V, f = 2 GHz 0 100 6 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 25 Ga 20 15 10 5 NF 10 Collector Current IC (mA) VCE = 2 V, f = 2 GHz 0 100 Associated Gain Ga (dB) 4 3 2 1 0 4 3 2 1 0 1 1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 VCE = 1 V, f = 5.2 GHz 8 25 10 8 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 VCE = 2 V, f = 5.2 GHz Associated Gain Ga (dB) 6 Ga 4 15 6 Ga 4 15 10 10 2 NF 0 1 10 Collector Current IC (mA) 5 0 100 2 NF 5 0 100 0 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10393EJ03V0DS Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) 20 20 Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) Associated Gain Ga (dB) 25 25 9 NESG2021M16 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 4 Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 6 5 Noise Figure NF (dB) 30 25 Ga 20 15 10 5 NF 10 Collector Current IC (mA) VCE = 3 V, f = 2 GHz 0 100 Ga Associated Gain Ga (dB) 4 3 2 1 0 3 20 2 15 1 NF VCE = 3 V, f = 1 GHz 10 5 100 0 1 10 Collector Current IC (mA) 1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 8 Noise Figure NF (dB) 25 6 Ga 4 15 10 2 NF 0 1 10 Collector Current IC (mA) VCE = 3 V, f = 5.2 GHz 5 0 100 Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ 10 Data Sheet PU10393EJ03V0DS Associated Gain Ga (dB) 20 Associated Gain Ga (dB) 25 NESG2021M16 PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm) 1.0±0.05 0.8+0.07 –0.05 0.4 1.2+0.07 –0.05 2 0.8 0.4 3 0.5±0.05 4 5 PIN CONNECTIONS 1. 2. 3. 4. 5. 6. Collector Emitter Emitter Base Emitter Emitter Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance and heat sinking. 0.125+0.1 –0.05 0.15±0.05 1 6 Data Sheet PU10393EJ03V0DS zE 11 NESG2021M16 • T he information in this document is current as of September, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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