NESG220033

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz • PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • OIP3 = 35 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • Maximum stable power gain: MSG =14.0 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz • SiGe HBT technology (UHS2) : fT = 12.5 GHz • This product is improvement of ESD of NESG2xxx series. • 3-pin minimold (33 PKG) ORDERING INFORMATION Part Number NESG220033 Order Number NESG220033-A Package 3-pin minimold (33 PKG) (Pb-Free) NESG220033-T1B NESG220033-T1B-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Base Current Note 1 Symbol VCBO VCES VCEO IB IC Ptot Note 2 Ratings 5.5 13 5.5 36 200 480 150 −65 to +150 Unit V V V mA mA mW °C °C Collector Current Total Power Dissipation Junction Temperature Storage Temperature Tj Tstg Notes 1. Depend on the ESD protect device. 2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10766EJ03V0DS (3rd edition) Date Published November 2009 NS Printed in Japan The mark shows major revised points. 2009 The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NESG220033 THERMAL RESISTANCE (TA = +25°C) Parameter Termal Resistance from Junction to Note Ambient Symbol Rthj-a Ratings 260 Unit °C/W Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Symbol IC MIN. − TYP. 40 MAX. − Unit mA Collector Current ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) Noise Figure (2) Associated Gain (1) Associated Gain (2) Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power Output 3rd Order Intercept Point fT ⏐S21e⏐ NF1 NF2 Ga1 Ga2 Cre Note 2 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 0.4 V, IC = 0 mA VCE = 5 V, IC = 10 mA − − 140 − − 180 100 100 260 nA nA − VCE = 5 V, IC = 40 mA, f = 1 GHz VCE = 5 V, IC = 40 mA, f = 1 GHz VCE = 5 V, IC = 10 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCE = 5 V, IC = 10 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCB = 5 V, IE = 0 mA, f = 1 MHz VCE = 5 V, IC = 40 mA, f = 1 GHz VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, − 11.0 − − 10.0 − − 12.0 − − 12.5 13.0 0.75 0.9 12.0 13.5 0.7 14.0 21.5 35 − − 1.15 − − − 0.9 − − − GHz dB dB dB dB dB pF dB dBm dBm MSG Note 3 PO (1 dB) OIP3 Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB R7B 140 to 260 2 Data Sheet PU10766EJ03V0DS NESG220033 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 1.1 1 000 3.8 cm × 9.0 cm × 0.8 mm (t), FR–4 f = 1 MHz 1.0 0.9 0.8 0.7 0.6 0.5 500 480 0 25 50 75 100 125 150 0 1 2 3 4 5 Ambient Temperature TA (°C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 3 V Collector Current IC (mA) Collector Current IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 5 V 10 1 0.1 0.01 0.001 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 200 1 700 μA 1 500 μ A 1 300 μ A 1 100 μ A 900 μ A 100 700 μ A 500 μA 50 300 μ A IB = 100 μA 0 0 1 2 3 4 5 Collector Current IC (mA) 150 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10766EJ03V0DS 3 NESG220033 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 3 V 1 000 VCE = 5 V DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain hFE 100 DC Current Gain hFE 1 100 10 10 1 0.1 10 100 1 000 1 0.1 1 10 100 1 000 Collector Current IC (mA) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 Gain Bandwidth Product fT (GHz) 15 Gain Bandwidth Product fT (GHz) VCE = 3 V, f = 1 GHz VCE = 5 V, f = 1 GHz 15 10 10 5 5 0 1 10 Collector Current IC (mA) 100 0 1 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10766EJ03V0DS NESG220033 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 |S21e| 10 5 0 0.1 1 Frequency f (GHz) 10 2 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 |S21e| 10 5 0 0.1 1 Frequency f (GHz) 10 2 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 40 mA MSG MSG MAG MAG MSG MAG MAG MSG INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 |S21e| 10 5 0 0.1 1 Frequency f (GHz) 10 2 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 |S21e| 10 5 0 0.1 1 Frequency f (GHz) 10 2 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 40 mA MSG MSG MAG MAG MSG MAG MAG MSG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 3 V, f = 1 GHz 15 MSG MAG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 5 V, f = 1 GHz 15 MSG MAG 10 |S21e|2 5 10 |S21e|2 5 0 1 10 Collector Current IC (mA) 100 0 1 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. Data Sheet PU10766EJ03V0DS 5 NESG220033 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Output 3rd Order Intercept Point OIP3 (dBm) OUTPUT 3RD ORDER INTERCEPT POINT vs. COLLECTOR CURRENT 16 40 VCE = 5 V, f1 = 1.000 GHz, f2 = 1.001 GHz 30 14 12 10 Associated Gain Ga (dB) 4 VCE = 5 V, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω Ga Noise Figure NF (dB) 3 2 8 6 20 1 NF 4 2 10 0 1 10 Collector Current IC (mA) 0 100 0 1 10 Collector Current IC (mA) 100 30 VCE = 5 V, IC (set) = 40 mA, f = 1 GHz 20 Pout GL 10 400 Each Output Power Pout (each) (dBm) 3rd Order Intermodulation Distortion IM3 (dB) OUTPUT POWER, LINEAR GAIN, COLLECTOR CURRENT vs. INPUT POWER EACH OUTPUT POWER, IM3 vs. EACH INPUT POWER 40 30 20 10 Pout (each) 0 –10 –20 –30 –40 –50 –60 –70 –80 –20 Output Power Pout (dBm) Linear Gain GL (dB) 300 200 Collector Current IC (mA) 0 IC –10 –20 –10 0 10 100 IM3 VCE = 5 V, IC (set) = 40 mA, f1 = 1.000 GHz, f2 = 1.001 GHz 0 10 20 30 0 20 –10 Input Power Pin (dBm) Each Input Power Pin (each) (dBm) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ 6 Data Sheet PU10766EJ03V0DS NESG220033 PACKAGE DIMENSIONS 3-PIN MINIMOLD (33 PKG) (UNIT: mm) 2.8±0.2 0.4+0.1 –0.05 1.5 0.65+0.1 –0.15 R7B 1. Emitter 2. Base 3. Collector 0 to 0.1 0.95 2.9±0.2 2 0.95 1 0.3 Marking 1.1 to 1.4 PIN CONNECTIONS 0.16+0.1 –0.05 0.4+0.1 –0.05 3 Data Sheet PU10766EJ03V0DS 7 NESG220033 • T he information in this document is current as of November, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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