UPC2758TB

DATA SHEET µPC2757TB, µPC2758TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE BIPOLAR ANALOG INTEGRATED CIRCUITS DESCRIPTION The µPC2757TB and µPC2758TB are silicon monolithic integrated circuit designed as 1st frequency downconverter for cellular/cordless telephone receiver stage. The ICs consist of mixer and local amplifier. The µPC2757TB features low current consumption and the µPC2758TB features improved intermodulation. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC2757TB and µPC2758TB are manufactured using NEC’s 20 GHz fT NESAT™||| silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Wideband operation • High-density surface mounting • Low current consumption • Supply voltage • Minimized carrier leakage • Equable output impedance • Built-in power save function : fRFin = 0.1 to 2.0 GHz, fIFin = 20 to 300 MHz : 6-pin super minimold package : ICC = 5.6 mA TYP. @ µPC2757TB ICC = 11 mA TYP. @ µPC2758TB : VCC = 2.7 to 3.3 V : Due to double balanced mixer : Single-end push-pull IF amplifier APPLICATIONS • Cellular/cordless telephone up to 2.0 GHz MAX. (example: GSM, PDC800M, PDC1.5G and so on): µPC2758TB • Cellular/cordless telephone up to 2.0 GHz MAX. (example: CT1, CT2 and so on): µPC2757TB ORDERING INFORMATION Part Number Package 6-pin super minimold Markings C1X C1Y Supplying Form Embossed tape 8 mm wide. Pin 1, 2, 3 face the tape perforation side. Qty 3kpcs/reel. Product Type Low current consumption High OIP3 µPC2757TB-E3 µPC2758TB-E3 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC2757TB, µPC2758TB) Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12771EJ2V0DS00 (2nd edition) Date Published June 2000 N CP(K) Printed in Japan The mark shows major revised points. © 1997, 2000 µPC2757TB, µPC2758TB PIN CONNECTIONS µPC2757TB, µPC2758TB in common (Top View) 3 2 1 (Bottom View) 4 5 6 4 5 6 3 2 1 Pin No. 1 2 3 4 Pin Name RFinput GND LOinput PS VCC IFoutput Example marking is for µPC2757TB C1X 5 6 PRODUCT LINE-UP (TA = +25°C, VCC = 3.0 V, ZS = ZL = 50 Ω) Items Part No. No RF ICC (mA) 5.6 900 MHz 1.5 GHz 1.9 GHz 900 MHz CG SSB · NF SSB · NF SSB · NF (dB) (dB) (dB) (dB) 10 10 13 15 1.5 GHz CG (dB) 15 1.9 GHz CG (dB) 13 900 MHz IIP3 (dBm) −14 1.5 GHz IIP3 (dBm) −14 1.9 GHz IIP3 (dBm) −12 µPC2757T µPC2757TB µPC2758T µPC2758TB µPC8112T µPC8112TB 8.5 9 11 11 15 13 13 11 9 10 13 19 18 17 −13 −12 −11 −10 −9 −7 Items Part No. 900 MHz PO(sat) (dBm) −3 1.5 GHz PO(sat) (dBm) − 1.9 GHz PO(sat) (dBm) −8 900 MHz RFLO (dB) − 1.5 GHz RFLO (dB) − 1.9 GHz RFLO (dB) − IF Output Configuration Packages µPC2757T µPC2757TB µPC2758T µPC2758TB µPC8112T µPC8112TB 6-pin minimold 6-pin super minimold Emitter follower +1 − −4 − − − 6-pin minimold 6-pin super minimold −2.5 −3 −3 −80 −57 −55 6-pin minimold Open collector 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. To know the associated product, please refer to each latest data sheet. Caution The µPC2757 and µPC2758’s IIP3 are calculated with ∆IM3 = 3 which is the same IM3 inclination as µPC8112. On the other hand, OIP3 of Standard characteristics in page 6 is cross point IP. 2 Data Sheet P12771EJ2V0DS00 µPC2757TB, µPC2758TB INTERNAL BLOCK DIAGRAM (µPC2757TB, µPC2758TB in common) RF input IF output POWER SAVE LO input VCC GND SYSTEM APPLICATION EXAMPLE DIGITAL CELLULAR TELEPHONE µ PC2758TB Low noise Tr. RX DEMOD. I Q VCO SW ÷N PLL PLL I 0˚ TX PA φ 90˚ Q To know the associated products, please refer to each latest data sheet. Data Sheet P12771EJ2V0DS00 3 µPC2757TB, µPC2758TB PIN EXPLANATION (Both µPC2757TB, 2758TB) Pin No. 1 Pin Name RFinput Applied Voltage (V) − Pin Voltage Note (V) 1.2 Function and Application This pin is RF input for mixer designed as double balance type. This circuit contributes to suppress spurious signal with minimum LO and bias power consumption. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. Internal Equivalent Circuit VCC To IF Amp. From LO 1 2 GND GND – This pin is ground of IC. Must be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. (Track length should be kept as short as possible.) This pin is LO input for local buffer designed as differential amplifier. Recommendable input level is –15 to 0 dBm. Also this symmetrical circuit can keep specified performance insensitive to processcondition distribution. − 3 LOinput – 1.3 VCC Mixer 3 4 PS VCC or GND – This pin is for power-save function. This pin can control ON/OFF operation with bias as follows; Bias: V VPS ≥ 2.5 0 to 0.5 Operation ON OFF VCC 4 Rise time/fall time using this pin are approximately 10 µs. 5 VCC 2.7 to 3.3 – Supply voltage 3.0 ±0.3 V for operation. Must be connected bypass capacitor. (example: 1 000 pF) to minimize ground impedance. This pin is output from IF buffer amplifier designed as single-ended push-pull type. This pin is assigned for emitter follower output with lowimpedance. In the case of connecting to high-impedance stage, please attach external matching circuit. − 6 IFoutput – 1.7 VCC 6 Note Each pin voltage is measured with VCC = 3.0 V 4 Data Sheet P12771EJ2V0DS00 µPC2757TB, µPC2758TB ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage Power Dissipation of Package Allowance Symbol VCC PD TA = +25°C Mounted on 50 × 50 × 1.6 mm double sided copper clad epoxy glass board at TA = +85°C Conditions Ratings 5.5 200 Unit V mW Operating Ambient Temperature Storage Temperature PS Pin Voltage TA Tstg VPS TA = +25°C –40 to +85 –55 to +150 5.5 °C °C V RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Operating Ambient Temperature LO Input Level Symbol VCC TA PLOin MIN. 2.7 –40 –15 TYP. 3.0 +25 –10 MAX. 3.3 +85 0 Unit V °C dBm ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZS = ZL = 50 Ω) µPC2757TB Parameter Circuit Current RF Frequency Response IF Frequency Response Conversion Gain 1 Symbol ICC fRF Conditions MIN. No input signal CG ≥ (CG1 –3 dB) fIFout = 130 MHz constant CG ≥ (CG1 –3 dB) fRFin = 0.8 GHz constant fRFin = 0.8 GHz, fIFout = 130 MHz PRFin = –40 dBm, Upper local fRFin = 2.0 GHz, fIFout = 250 MHz PRFin = –40 dBm, Lower local 3.7 0.1 TYP. 5.6 − − MAX. 7.7 2.0 MIN. 6.6 0.1 TYP. 11 − − MAX. 14.8 2.0 mA GHz µPC2758TB Unit fIF 20 300 20 300 MHz CG1 12 15 18 16 19 22 dB Conversion Gain 2 CG2 10 − − 13 16 14 − − 17 20 dB Single Sideband Noise Figure 1 Single Sideband Noise Figure 2 Saturated Output Power 1 Saturated Output Power 2 SSB • NF1 fRFin = 0.8 GHz, fIFout = 130 MHz, SSB mode, Upper local SSB • NF2 fRFin = 2.0 GHz, fIFout = 250 MHz, SSB mode, Lower local PO(sat) 1 fRFin = 0.8 GHz, fIFout = 130 MHz PRFin = –10 dBm, Upper local fRFin = 2.0 GHz, fIFout = 250 MHz PRFin = –10 dBm, Lower local 10 13 9 12 dB 13 16 − − 13 15 − − dB –11 –3 –7 +1 dBm PO(sat) 2 –11 –8 –7 –4 dBm Data Sheet P12771EJ2V0DS00 5 µPC2757TB, µPC2758TB STANDARD CHARACTERISTICS FOR REFERENCE (Unless otherwise specified: TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZS = ZL = 50 Ω) Reference Value Parameter Output 3rd Intercept Point Symbol OIP3 Conditions fRFin = 0.8 to 2.0 GHz, fIFout = 0.1 GHz, Cross point IP fLOin = 0.8 to 2.0 GHz fLOin = 0.8 to 2.0 GHz VPS = 0.5 V µPC2757TB +5 µPC2758TB +11 Unit dBm LO Leakage at RF pin LO Leakage at IF pin Power-saving Current LOrf LOif ICC(PS) –35 –23 0.1 –30 –15 0.1 dBm dBm µA 6 Data Sheet P12771EJ2V0DS00 µPC2757TB, µPC2758TB TEST CIRCUIT µPC2757TB, µPC2758TB Signal Generator 1 000 pF 50 Ω 3 C2 2 Signal Generator 1 000 pF 50 Ω 1 C1 RFinput IFoutput GND VCC 3 300 pF 5 3V C3 6 3 300 pF C4 50 Ω Spectrum Analyzer LOinput PS 4 (Top View) POWER SAVE ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C3 LO input C2 PS PS bias GND VCC C4 → Voltage supply RF input C1 C5 IF output Component List No. C1 to 2 C3 to 5 Value 1 000 pF 3 300 pF Notes 1. 35 × 42 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 3. Solder plated on pattern 4. °{: Through holes APPLICATION This IC is guaranteed on the test circuit constructed with 50 Ω equipment and transmission line. This IC, however, does not have 50 Ω input/output impedance, but electrical characteristics such as conversion gain and intermodulation distortion are described herein on these conditions without impedance matching. So, you should understand that conversion gain and intermodulation distortion at input level will vary when you improve VS of RF input with external circuit (50 Ω termination or impedance matching.) Data Sheet P12771EJ2V0DS00 7 µPC2757TB, µPC2758TB TYPICAL CHARACTERISTICS (TA = +25°C, on Measurement Circuit) − µPC2757TB − CIRCUIT CURRENT vs. SUPPLY VOLTAGE 9 no signals 8 VCC = VPS 7 6 5 4 3 2 1 0 0 1 2 3 4 Supply Voltage VCC (V) 5 6 Conversion Gain CG (dB) Circuit Current ICC (mA) CONVERSION GAIN vs. RF INPUT FREQUENCY 20 18 16 14 12 10 VCC = VPS = 3.0 V PRFin = –40 dBm 8 PLOin = –10 dBm fIFout = 130 MHz 6 0 0.5 1.0 1.5 2.0 RF Input Frequency fRFin (GHz) 2.5 SSB NOISE FIGURE vs. RF INPUT FREQUENCY 15 SSB Noise Figure SSB • NF (dB) 14 13 12 11 10 9 8 7 6 1.4 VCC = VPS = 3.0 V PRFin = –40 dBm PLOin = –10 dBm fIFout = 130 MHz 1.6 1.8 2.0 2.2 2.4 RF Input Frequency fRFin (GHz) 2.6 Conversion Gain CG (dB) CONVERSION GAIN vs. IF OUTPUT FREQUENCY 20 VCC = VPS = 3.0 V PRFin = –40 dBm 18 PLOin = –10 dBm fRFin = 800 MHz 16 14 12 10 8 6 0 100 200 300 400 500 600 IF Output Frequency fIFout (MHz) 700 CONVERSION GAIN vs. LO INPUT LEVEL 25 Conversion Gain CG (dB) CONVERSION GAIN vs. LO INPUT LEVEL 25 20 15 10 5 0 –5 –50 VCC = VPS = 3.0 V fRFin = 2.0 GHz fLOin = 1.9 GHz PRFin = –40 dBm –40 –30 –20 –10 0 LO Input Level PLOin (dBm) 10 Conversion Gain CG (dB) 20 15 10 5 0 –5 –50 VCC = VPS = 3.0 V fRFin = 900 MHz fLOin = 800 MHz PRFin = –40 dBm –40 –30 –20 –10 0 LO Input Level PLOin (dBm) 10 8 Data Sheet P12771EJ2V0DS00 µPC2757TB, µPC2758TB − µPC2757TB − IF Output Level of Each Tone PIFout (dBm) 3rd Order Intemodulation Distortion IM3 (dBm) IF Output Level of Each Tone PIFout (dBm) 3rd Order Intemodulation Distortion IM3 (dBm) IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION DISTORTION vs. RF INPUT LEVEL 20 fRFin = 800 MHz 10 fLOin = 930 MHz PLOin = –10 dBm 0 VCC = VPS = 3.0 V –10 –20 –30 –40 –50 –60 –70 –50 –45 –40 –35 –30 –25 –20 –15 –10 –5 RF Input Level PRFin (dBm) LO LEAKAGE AT RF PIN vs. LO INPUT FREQUENCY –10 PLOin = –10 dBm –15 VCC = VPS = 3.0 V –20 –25 –30 –35 –40 –45 –50 –55 –60 0 0.5 1 1.5 2 LO Input Frequency fLOin (GHz) 2.5 IM3 Pout IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION DISTORTION vs. RF INPUT LEVEL 20 fRFin = 2 GHz 10 fLOin = 1.75 GHz PLOin = –10 dBm 0 VCC = VPS = 3.0 V –10 –20 –30 –40 –50 –60 –70 –50 –45 –40 –35 –30 –25 –20 –15 –10 –5 RF Input Level PRFin (dBm) LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY –10 PLOin = –10 dBm –15 VCC = VPS = 3.0 V –20 –25 –30 –35 –40 –45 0 0.5 1 1.5 2 LO Input Frequency fLOin (GHz) 2.5 IM3 Pout LO Leakage at RF Pin LOrf (dBm) Remark The graphs indicate nominal characteristics. LO Leakage at IF Pin LOif (dBm) Data Sheet P12771EJ2V0DS00 9 µPC2757TB, µPC2758TB S-PARAMETERS − µPC2757TB − Calibrated on pin of DUT S11 Z REF 1.0 Units 1 200.0 mUnits/ 56.422 Ω –275.59 Ω hp MARKER 1 500.0 MHz S11 Z REF 1.0 Units 1 200.0 mUnits/ 104.03 Ω –413.42 Ω hp MARKER 1 500.0 MHz 1 1 2 2 5 4 3 5 4 3 RF PORT VCC = VPS = 3.0V 1:500 MHz 56.422 Ω -j275.59 Ω 2:900 MHz 38.68 Ω -j152.71 Ω 3:1 500 MHz 31.699 Ω -j88.102 Ω 4:1 900 MHz 29.209 Ω -j65.926 Ω 5:2 500 MHz 29.209 Ω -j44.758 Ω S11 Z REF 1.0 Units 1 200.0 mUnits/ 90.969 Ω –243.41 Ω hp MARKER 1 500.0 MHz START 0.050000000 GHz STOP 3.000000000 GHz RF PORT VCC = 3.0V VPS = GND 1:500 MHz 104.03 Ω -j413.42 Ω 2:900 MHz 74.82 Ω -j243.06 Ω 3:1 500 MHz 59.266 Ω -j154.98 Ω 4:1 900 MHz 51.227 Ω -j124.55 Ω 5:2 500 MHz 43.996 Ω -j95.117 Ω S11 Z REF 1.0 Units 1 200.0 mUnits/ 114.16 Ω –400.03 Ω hp MARKER 1 500.0 MHz START 0.050000000 GHz STOP 3.000000000 GHz 1 1 2 2 5 43 5 4 3 LO PORT VCC = VPS = 3.0V 1:500 MHz 90.969 Ω -j243.41 Ω 2:900 MHz 67.828 Ω -j150.32 Ω 3:1 500 MHz 51.488 Ω -j97.273 Ω 4:1 900 MHz 44.621 Ω -j77.352 Ω 5:2 500 MHz 39.627 Ω -j56.738 Ω S22 Z REF 1.0 Units 1 200.0 mUnits/ 19.146 Ω 7.2041 Ω hp MARKER 1 130.0 MHz 1 START 0.050000000 GHz STOP 3.000000000 GHz LO PORT VCC = 3.0V VPS = GND 1:500 MHz 114.16 Ω -j400.03 Ω 2:900 MHz 75.133 Ω -j242.73 Ω 3:1 500 MHz 53.516 Ω -j154.21 Ω 4:1 900 MHz 44.789 Ω -j124.74 Ω 5:2 500 MHz 37.004 Ω -j93.828 Ω S22 Z REF 1.0 Units 1 200.0 mUnits/ 066.38 Ω –1.3174 kΩ hp MARKER 1 130.0 MHz START 0.050000000 GHz STOP 3.000000000 GHz 2 1 2 IF PORT VCC = VPS = 3.0V 1:130 MHz 19.146 Ω -j7.2041 Ω 2:250 MHz 22.73 Ω -j12.909 Ω START 0.050000000 GHz STOP 3.000000000 GHz IF PORT VCC = 3.0V VPS = GND 1:130 MHz 66.38 Ω -j1.3174 kΩ 2:250 MHz 88.281 Ω -j725.41 Ω START 0.050000000 GHz STOP 3.000000000 GHz 10 Data Sheet P12771EJ2V0DS00 µPC2757TB, µPC2758TB TYPICAL CHARACTERISTICS (TA = +25°C, on Measurement Circuit) − µPC2758TB − CIRCUIT CURRENT vs. SUPPLY VOLTAGE 20 no signals VCC = VPS Conversion Gain CG (dB) CONVERSION GAIN vs. RF INPUT FREQUENCY 24 VCC = VPS = 3.0 V PRFin = –40 dBm 22 PLOin = –10 dBm fIFout = 130 MHz 20 18 16 14 12 10 0 0.5 1.0 1.5 2.0 2.5 RF Input Frequency fRFin (GHz) 3.0 Circuit Current ICC (mA) 15 10 5 0 0 1 2 3 4 Supply Voltage VCC (V) 5 6 SSB Noise Figure SSB • NF (dB) Conversion Gain CG (dB) SSB NOISE FIGURE vs. RF INPUT FREQUENCY 20 VCC = VPS = 3.0 V PRFin = –40 dBm PLOin = –10 dBm fIFout = 130 MHz 15 CONVERSION GAIN vs. IF OUTPUT FREQUENCY 20 19 18 17 16 15 14 13 12 11 VCC = VPS = 3.0 V PRFin = –40 dBm PLOin = –10 dBm fRFin = 800 MHz 0 100 200 300 400 500 IF Output Frequency fIFout (MHz) 600 10 5 0.0 0.5 1.0 1.5 2.0 2.5 RF Input Frequency fRFin (GHz) 3.0 10 CONVERSION GAIN vs. LO INPUT LEVEL 25 Conversion Gain CG (dB) Conversion Gain CG (dB) CONVERSION GAIN vs. LO INPUT LEVEL 25 20 15 10 5 0 –5 –50 VCC = VPS = 3.0 V fRFin = 2.0 GHz fLOin = 1.9 GHz PRFin = –40 dBm –40 –30 –20 –10 0 LO Input Level PLOin (dBm) 10 20 15 10 5 0 –5 –50 VCC = VPS = 3.0 V fRFin = 800 MHz fLOin = 930 MHz PRFin = –40 dBm –40 –30 –20 –10 0 LO Input Level PLOin (dBm) 10 Data Sheet P12771EJ2V0DS00 11 µPC2757TB, µPC2758TB − µPC2758TB − IF Output Level of Each Tone PIFout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF Output Level of Each Tone PIFout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION DISTORTION vs. RF INPUT LEVEL 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –50 –40 fRF1 = 800 MHz fRF2 = 805 MHz fLO = 900 MHz PLOin = –10 dBm VCC = VPS = 3.0 V –30 –20 –10 0 RF Input Level PRFin (dBm) 10 IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION DISTORTION vs. RF INPUT LEVEL 20 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –50 –40 fRF1 = 2.0 GHz fRF2 = 2.005 GHz fLO = 1.9 GHz PLOin = –10 dBm VCC = VPS = 3.0 V –30 –20 –10 0 RF Input Level PRFin (dBm) 10 LO LEAKAGE AT RF PIN vs. LO INPUT FREQUENCY 0 LO Leakage at RF Pin LOrf (dBm) LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY 0 LO Leakage at IF Pin LOif (dBm) –10 –20 –30 –40 –50 –60 –10 –20 –30 –40 –50 –60 PLOin = –10 dBm VCC = VPS = 3.0 V 0 0.5 1.0 1.5 2.0 2.5 LO Input Frequency fLOin (GHz) 3.0 PLOin = –10 dBm VCC = VPS = 3.0 V 0 0.5 1.0 1.5 2.0 2.5 LO Input Frequency fLOin (GHz) 3.0 Remark The graphs indicate nominal characteristics. 12 Data Sheet P12771EJ2V0DS00 µPC2757TB, µPC2758TB S-PARAMETERS − µPC2758TB − Calibrated on pin of DUT Z S11 REF 1.0 Units 1 200.0 mUnits/ 63.312 Ω –261.34 Ω hp MARKER 1 500.0 MHz Z S11 REF 1.0 Units 1 200.0 mUnits/ 107.13 Ω –395.56 Ω hp MARKER 1 500.0 MHz 1 1 2 5 2 4 3 5 4 3 RF PORT VCC = VPS = 3.0V 1:500 MHz 63.312 Ω -j261.34 Ω 2:900 MHz 40.227 Ω -j142.36 Ω 3:1 500 MHz 32.441 Ω -j79.68 Ω 4:1 900 MHz 31.107 Ω -j58.273 Ω 5:2 500 MHz 30.871 Ω -j39.08 Ω Z S11 REF 1.0 Units 1 200.0 mUnits/ 73.398 Ω –188.13 Ω hp MARKER 1 500.0 MHz START 0.050000000 GHz STOP 3.000000000 GHz RF PORT VCC = 3.0V VPS = GND 1:500 MHz 107.13 Ω -j395.56 Ω 2:900 MHz 78.711 Ω -j234.41 Ω 3:1 500 MHz 61.922 Ω -j148.82 Ω 4:1 900 MHz 52.629 Ω -j119.55 Ω 5:2 500 MHz 44.766 Ω -j90.578 Ω Z S11 REF 1.0 Units 1 200.0 mUnits/ 100.31 Ω –374.75 Ω hp MARKER 1 500.0 MHz START 0.050000000 GHz STOP 3.000000000 GHz 1 1 2 43 2 5 4 3 5 LO PORT VCC = VPS = 3.0V 1:500 MHz 73.398 Ω -j188.13 Ω 2:900 MHz 64.551 Ω -j112.66 Ω 3:1 500 MHz 53.133 Ω -j72.941 Ω 4:1 900 MHz 48.111 Ω -j57.307 Ω 5:2 500 MHz 44.541 Ω -j41.564 Ω Z S22 REF 1.0 Units 1 200.0 mUnits/ 15.696 Ω 9.5011 Ω hp MARKER 1 130.0 MHz 1 START 0.050000000 GHz STOP 3.000000000 GHz LO PORT VCC = 3.0V VPS = GND 1:500 MHz 100.31 Ω -j374.75 Ω 2:900 MHz 73.148 Ω -j223.07 Ω 3:1 500 MHz 57.719 Ω -j144.02 Ω 4:1 900 MHz 50.738 Ω -j119.52 Ω 5:2 500 MHz 41.836 Ω -j90.25 Ω Z S22 REF 1.0 Units 1 200.0 mUnits/ 106.69 Ω –1.3425 kΩ hp MARKER 1 130.0 MHz START 0.050000000 GHz STOP 3.000000000 GHz 2 1 2 IF PORT VCC = VPS = 3.0V 1:130 MHz 15.696 Ω -j9.5811 Ω 2:250 MHz 21.4 Ω -j16.331 Ω START 0.050000000 GHz STOP 3.000000000 GHz IF PORT VCC = 3.0V VPS = GND 1:130 MHz 106.69 Ω -j1.3425 kΩ 2:250 MHz 83.75 Ω -j711.47 Ω START 0.050000000 GHz STOP 3.000000000 GHz Data Sheet P12771EJ2V0DS00 13 µPC2757TB, µPC2758TB PACKAGE DIMENSIONS 6-pin super minimold (Unit: mm) 2.1±0.1 1.25±0.1 2.0±0.2 1.3 0.65 0.65 0.1 MIN. 0.9±0.1 0.7 14 Data Sheet P12771EJ2V0DS00 0 to 0.1 0.15+0.1 –0 0.2+0.1 –0.05 µPC2757TB, µPC2758TB NOTE ON CORRECT USE (1) Observe precautions for handling because of electrostatic sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). Keep the track length of the ground pins as short as possible. (3)ý Connect a bypass capacitor (e.g. 1 000 pF) to the VCC pin. (4)ý The DC cut capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Recommended Condition Symbol IR35-00-3 Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 3, Exposure limit: None Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260°C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300°C Time: 3 seconds or less (per side of device) Note Exposure limit: None VPS VP15-00-3 Wave Soldering WS60-00-1 Partial Heating – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P12771EJ2V0DS00 15 µPC2757TB, µPC2758TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is current as of June, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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