UPG2160T5K-E2-A

DATA SHEET GaAs INTEGRATED CIRCUIT µPG2160T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2160T5K is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and another L, S-band applications. This device can operate frequency from 0.5 to 3.0 GHz, having the low insertion loss and high isolation. This device is housed in a 6-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES • Supply voltage • Switch control voltage • : VDD = 2.4 to 2.8 V (2.6 V TYP.) : Vcont (H) = 2.4 to VDD (2.6 V TYP.) : Vcont (L) = −0.2 to 0.2 V (0 V TYP.) Low insertion loss : Lins1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : Lins2 = 0.35 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : Lins3 = 0.40 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : Lins4 = 0.50 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V High isolation : ISL1 = 25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : ISL2 = 18 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V : ISL4 = 13 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V Handling power : Pin (0.1 dB) = +21.0 dBm TYP. @ f = 2.0/2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V High-density surface mounting : 6-pin plastic TSSON package (1.0 × 1.0 × 0.37 mm) • • • APPLICATIONS • L, S-band digital cellular or cordless telephone TM • W-LAN, WLL and Bluetooth etc. ORDERING INFORMATION Part Number Order Number Package 6-pin plastic TSSON (Pb-Free) Note Marking G4 Supplying Form • Embossed tape 8 mm wide • Pin 1, 6 face the perforation side of the tape • Qty 5 kpcs/reel µPG2160T5K-E2 µPG2160T5K-E2-A Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2160T5K Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PG10635EJ01V0DS (1st edition) Date Published September 2006 NS CP(K) Printed in Japan 2006 µPG2160T5K PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) 1 6 1 (Top View) 6 6 (Bottom View) 1 Pin No. 1 2 3 Pin Name OUTPUT1 GND OUTPUT2 Vcont INPUT VDD G4 Vcont High Low Parameter Parameter Note Note 2 5 2 5 5 2 4 5 6 3 4 3 4 4 3 TRUTH TABLE INPUT−OUTPUT1 OFF ON INPUT−OUTPUT2 ON OFF ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Symbol VDD Vcont Pin TA Tstg Ratings +6.0 +6.0 +26 −45 to +85 −55 to +135 Unit V V dBm °C °C Supply Voltage Switch Control Voltage Input Power Operating Ambient Temperature Storage Temperature RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Symbol VDD Vcont (H) Vcont (L) MIN. 2.4 2.4 −0.2 TYP. 2.6 2.6 0 MAX. 2.8 VDD 0.2 Unit V V V Supply Voltage Switch Control Voltage (H) Switch Control Voltage (L) Note Vcont (H) ≤ VDD 2 Data Sheet PG10635EJ01V0DS µPG2160T5K ELECTRICAL CHARACTERISTICS (TA = +25°C, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, unless otherwise specified) Parameter Insertion Loss 1 Insertion Loss 2 Insertion Loss 3 Insertion Loss 4 Isolation 1 Isolation 2 Isolation 3 Isolation 4 Input Return Loss Output Return Loss 0.1 dB Loss Compression Input Power Note Symbol Lins1 Lins2 Lins3 Lins4 ISL1 ISL2 ISL3 ISL4 RLin RLout Pin (0.1 dB) Test Conditions f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 3.0 GHz f = 0.5 to 1.0 GHz f = 1.0 to 2.0 GHz f = 2.0 to 2.5 GHz f = 2.5 to 3.0 GHz f = 0.5 to 3.0 GHz f = 0.5 to 3.0 GHz f = 2.0/2.5 GHz MIN. − − − − 22 15 14 10 15 15 +18.0 TYP. 0.30 0.35 0.40 0.50 25 18 17 13 20 20 +21.0 MAX. 0.45 0.50 0.55 0.65 − − − − − − − − − 100 20 − Unit dB dB dB dB dBm 2nd Harmonics 3rd Harmonics Supply Current Switch Control Current Switch Control Speed 2f0 3f0 IDD Icont tSW f = 2.0/2.5 GHz, Pin = +10 dBm f = 2.0/2.5 GHz, Pin = +10 dBm No signal 65 65 − − 75 75 50 4 150 dBc dBc µA µA ns 50% CTL to 90/10% RF − Note Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. Data Sheet PG10635EJ01V0DS 3 µPG2160T5K EVALUATION CIRCUIT VDD INPUT Vcont 1 000 pF C0 1 000 pF 6 5 4 1 2 3 C0 C0 OUTPUT1 OUTPUT2 Remark C0 : 56 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10635EJ01V0DS µPG2160T5K ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vcont OUTPUT2 C 5 INPUT C1 G4 C 4 C C 3 2 OUTPUT1 VDD USING THE NEC EVALUATION BOARD Symbol C1, C2, C3 C4, C5 Values 56 pF 1 000 pF Data Sheet PG10635EJ01V0DS 5 µPG2160T5K TYPICAL CHARACTERISTICS (TA = +25°C, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, using test fixture, unless otherwise specified) INPUT-OUTPUT1 INSERTION LOSS vs. FREQUENCY 2.5 2.0 1: 2: 3: 4: 5: INPUT-OUTPUT2 INSERTION LOSS vs. FREQUENCY 2.5 2.0 1: 2: 3: 4: 5: –0.255 dB 0.5 GHz –0.305 dB 1.0 GHz –0.355 dB 2.0 GHz –0.408 dB 2.5 GHz –0.502 dB 3.0 GHz –0.255 dB 0.5 GHz –0.304 dB 1.0 GHz Insertion Loss Lins (dB) Insertion Loss Lins (dB) 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 0.1 0.7 1.3 1.9 1 2 3 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 1 2 3 –0.354 dB 2.0 GHz –0.408 dB 2.5 GHz –0.506 dB 3.0 GHz 4 5 4 5 2.5 3.1 –2.5 0.1 0.7 1.3 1.9 2.5 3.1 Frequency f (GHz) Frequency f (GHz) INPUT-OUTPUT1 ISOLATION vs. FREQUENCY 50 40 30 1: 2: 3: 4: 5: INPUT-OUTPUT2 ISOLATION vs. FREQUENCY 50 40 30 1: 2: 3: 4: 5: –30.53 dB 0.5 GHz –24.659 dB 1.0 GHz –19.114 dB 2.0 GHz –17.362 dB 2.5 GHz –15.87 dB 3.0 GHz –30.378 dB 0.5 GHz –24.496 dB 1.0 GHz –18.545 dB 2.0 GHz Isolation ISL (dB) Isolation ISL (dB) 20 10 0 –10 –20 –30 –40 –50 0.1 0.7 1.3 1.9 1 2 3 20 10 0 –10 –20 –30 –40 1 2 3 –17.212 dB 2.5 GHz –15.717 dB 3.0 GHz 4 5 4 5 2.5 3.1 –50 0.1 0.7 1.3 1.9 2.5 3.1 Frequency f (GHz) Frequency f (GHz) INPUT-OUTPUT1 INPUT RETURN LOSS vs. FREQUENCY 50 40 1: 2: 3: 4: 5: INPUT-OUTPUT2 INPUT RETURN LOSS vs. FREQUENCY 50 40 1: 2: –18.298 dB –18.557 dB 0.5 GHz Input Return Loss RLin (dB) Input Return Loss RLin (dB) 30 20 10 0 –10 –20 –30 –40 –50 0.1 0.7 1.3 2 3 1 0.5 GHz –22.409 dB 1.0 GHz –28.233 dB 2.0 GHz –31.992 dB 2.5 GHz –27.286 dB 3.0 GHz –23.14 dB 30 20 10 0 –10 –20 –30 –40 2 3 0.7 1.3 1.9 1 1.0 GHz 3: –29.248 dB 2.0 GHz 4: –28.445 dB 2.5 GHz 5: –23.756 dB 3.0 GHz 4 2.5 5 4 5 1.9 3.1 –50 0.1 2.5 3.1 Frequency f (GHz) Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 Data Sheet PG10635EJ01V0DS µPG2160T5K INPUT-OUTPUT1 OUTPUT RETURN LOSS vs. FREQUENCY 50 1: 2: 3: 4: 5: INPUT-OUTPUT2 OUTPUT RETURN LOSS vs. FREQUENCY 50 1: 2: 3: 4: 5: –18.38 dB –18.646 dB 0.5 GHz Output Return Loss RLout (dB) Output Return Loss RLout (dB) 40 30 20 10 0 –10 –20 –30 –40 –50 0.1 0.7 1.3 2 3 1.9 1 0.5 GHz –22.911 dB 1.0 GHz –28.715 dB 2.0 GHz –30.049 dB 2.5 GHz –25.211 dB 3.0 GHz 40 30 20 10 0 –10 –20 –30 –40 –50 0.1 0.7 1.3 2 3 1.9 1 –23.332 dB 1.0 GHz –31.078 dB 2.0 GHz –28.398 dB 2.5 GHz –23.042 dB 3.0 GHz 4 2.5 5 5 4 2.5 3.1 3.1 Frequency f (GHz) Frequency f (GHz) OUTPUT POWER vs. INPUT POWER +35 f = 2.0 GHz +30 +25 +20 +15 +10 +5 +8 Output Power Pout (dBm) +12 +16 +20 +24 +28 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PG10635EJ01V0DS 7 µPG2160T5K MOUNTING PAD DIMENSIONS 6-PIN PLASTIC TSSON (UNIT: mm) 0.31 0.29 0.29 0.31 Remark The mounting pad layouts in this document are for reference only. 8 6–0.22 Data Sheet PG10635EJ01V0DS 0.35 0.35 µPG2160T5K PACKAGE DIMENSIONS 6-PIN PLASTIC TSSON (UNIT: mm) (Top View) 1.0±0.1 1.0±0.1 (Bottom View) 1.0±0.1 0.15+0.07 –0.05 0.15+0.07 –0.05 0.35±0.06 0.35±0.06 0.45 ±0.1 1.0±0.1 0.13±0.07 0.23±0.07 0.175±0.075 0.37+0.03 –0.05 Data Sheet PG10635EJ01V0DS 9 µPG2160T5K RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating Peak temperature (terminal temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 WS260 Condition Symbol IR260 For soldering Preheating temperature (package surface temperature) : 120°C or below Caution Do not use different soldering methods together (except for partial heating). 10 Data Sheet PG10635EJ01V0DS µPG2160T5K Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • T he information in this document is current as of September, 2006. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 Data Sheet PG10635EJ01V0DS 11 µPG2160T5K Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: contact@ncsd-hk.necel.com Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office TEL: +82-2-558-2120 FAX: +82-2-558-5209 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Compound Semiconductor Devices Division NEC Electronics Corporation URL: http://www.ncsd.necel.com/ 0604