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PDMB150E6

PDMB150E6

  • 厂商:

    NIEC

  • 封装:

  • 描述:

    PDMB150E6 - 150A 600V - Nihon Inter Electronics Corporation

  • 数据手册
  • 价格&库存
PDMB150E6 数据手册
QS043-402-20398(2/5) IGBT Module-Dual □ 回 路 図 : CIRCUIT PDMB150E6 150 A,600V □ 外 形 寸 法 図 : OUTLINE DRAWING PDMB150E6C (C2E1) 1 (E2) 2 (C1) 3 7(G2) 6(E2) 12.0 11.0 12.0 11.0 12.0 94.0 80 ±0.25 2-Ø6.5 1 48.0 16.0 14.0 2 3 7 6 12 1 11 94 80 ± 0 .2 5 12 11 2 12 3 7 6 2-Ø 5.5 4 4-fasten tab #110 t= 0.5 8 6 4 18.0 4 5(E1) 4(G1) 5 4 5 4 3-M5 23.0 23.0 17.0 4-fasten tab #110 t=0.5 21.2 7.5 3-M5 23 23 17 14 9 14 9 14 16 7 16 7 16 30 +1 .0 - 0 .5 30 +1 .0 - 0 .5 PDMB150E6 □ 最 大 定 格 : MAXIMUM RATINGS Item コレクタ・エミッタ間電圧 Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ 間 電 圧 Gate-Emitter Voltage コレクタ電流 Collector Current コレクタ損失 Collector Power Dissipation 接 合 温 度 Junction Temperature Range 保 存 温 度 Storage Temperature Range 絶 縁 耐 圧(Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink 締め付けトルク Mounting Torque Busbar to Main Terminal □ 電気的特性 DC 1ms (TC=25℃) Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated 7 PDMB150E6C Dimension:[mm] Value 23 4 12 17 35 Unit V V A W ℃ ℃ V(RMS) 22.) ( 04 (0 ) 2 2 .4 N・m (kgf・cm) 600 ±20 150 300 560 -40~+150 -40~+125 2,500 PDMB150E6 3 3 .6 (0 ) 22.) ( 04 PDMB150E6C : ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies 上昇時間 ターンオン時間 下降時間 ターンオフ時間 Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 600V, VGE= 0V VGE= ±20V,VCE= 0V IC= 150A,VGE= 15V VCE= 5V,IC= 150mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= R L= RG= VGE= 300V 2.0Ω 5.1Ω ±15V Min. - - - 4.0 - - - - - Typ. - - 2.1 - 7,500 0.15 0.25 0.10 0.35 Max. 1.0 1.0 2.6 8.0 - 0.30 0.40 0.35 0.70 Unit mA μA V V pF Characteristic コレクタ遮断電流 Collector-Emitter Cut-Off Current ゲート漏れ電流 Gate-Emitter Leakage Current コレクタ・エミッタ間飽和電圧 Collector-Emitter Saturation Voltage ゲ ー ト しきい値電圧 Gate-Emitter Threshold Voltage 入 力 容 量 Input Capacitance スイッチング時間 Switching Time μs □フリーホイーリングダイオードの 特 性: FREE Item 順 電 流 Forward Current Characteristic 順 電 圧 Peak Forward Voltage 逆回復時間 Reverse Recovery Time WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃) Symbol IF IFM Symbol VF trr Rated Value 150 300 Min. - - Typ. 1.9 0.15 Max. 2.4 0.25 Unit A DC 1ms Test Condition IF= 150A,VGE= 0V IF= 150A,VGE= -10V di/dt= 300A/μs Unit V μs □ 熱 的 特 性 : THERMAL CHARACTERISTICS Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tc測定点チップ直下) Min. - - Typ. - - Max. 0.22 0.45 Unit ℃/W 00 日本インター株式会社 QS043-402-20398(3/5) PDMB150E6 PDMB150E6C Fig.1- Output Characteristics (Typical) 300 Fig.2- Output Characteristics (Typical) T C=25°C 300 T C=125°C VGE=20V 12V VGE=20V 250 12V 250 15V 11V 15V 11V Collector Current I C (A) 200 Collector Current I C (A) 200 150 10V 150 10V 100 9V 100 9V 50 50 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25°C 16 14 12 10 8 6 4 2 0 T C=125°C IC=60A 150A 300A IC=60A 150A 300A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 30000 100000 RL =2.0 TC=25°C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ T C=25°C Gate to Emitter Voltage VGE (V) 300 250 200 150 100 50 0 12 10 Capacitance C (pF) 10000 Cies VCE =300V 200V 100V 8 6 4 2 0 600 3000 Coes Cres 1000 300 0 100 200 300 400 500 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 日本インター株式会社 QS043-402-20398(4/5) PDMB150E6 PDMB150E6C Fig.7- Collector Current vs. Switching Time (Typical) 1 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 5 0.8 tOFF VCC=300V RG=5.1 VGE=±15V T C=25°C Resistive Load Switching Time t (µs) Switching Time t (µs) 2 1 0.5 VCC=300V IC=150A VGE=±15V T C=25°C Resistive Load 0.6 tf 0.4 toff ton tr(V CE) tf 0.2 0.1 0.05 0.2 tON tr(VCE) 0 0 50 100 150 200 250 0.02 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 Fig.10- Series Gate Impedance vs. Switching Time 10 5 1 Switching Time t (µs) Switching Time t (µs) tOFF tON VCC=300V RG=5.1 VGE=±15V T C=125°C Inductive Load 2 1 0.5 VCC=300V IC=150A VGE=±15V T C=125°C Inductive Load 0.1 tf tr(Ic) toff ton tf 0.2 0.1 0.05 0.01 tr(IC ) 0.001 0 50 100 150 200 250 0.02 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 16 300 Fig.12- Series Gate Impedance vs. Switching Loss VCC=300V IC=150A VGE=±15V T C=125°C Inductive Load Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 12 VCC=300V RG=5.1 VGE=±15V T C=125°C Inductive Load 100 EON EOFF 8 30 EON ERR EOFF 10 4 3 ERR 0 0 50 100 150 200 250 1 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) 00 日本インター株式会社 QS043-402-20398(5/5) PDMB150E6 PDMB150E6C 300 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25°C T C=125°C Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 250 500 IF=150A T C=25°C T C=125°C trr Forward Current I F (A) 200 200 150 100 100 50 50 20 IRrM 0 0 1 2 3 4 10 0 150 300 450 600 750 900 Forward Voltage VF (V) -di/dt (A/µs) Fig.15- Reverse Bias Safe Operating Area 1000 500 200 RG=5.1 , VGE=±15V, T C
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