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NJL5901R

NJL5901R

  • 厂商:

    NJRC(新日本无线)

  • 封装:

  • 描述:

    NJL5901R - COBP PHOTO REFLECTOR - New Japan Radio

  • 数据手册
  • 价格&库存
NJL5901R 数据手册
NJL5901R COBP PHOTO REFLECTOR GENERAL DESCRIPTION NJL5901R is the compact surface mount type photo reflector in which Lead(Pb) – free reflow soldering is possible. It is possible to perform reflow soldering temperature 260°C and 2 times. NJL5901R has realized the high output current and the high S/N ratio combining a high output infrared LED and a high sensitivity Si photo-transister. FEATURES • Pb free solder re-flowing permitted(260°C, 2times) • Miniature, thin, surface mount 1.6mm × 2.4mm × 0.8mm • Built-in visible light cut-off filter • High output, high S/N ratio OUTLINE (typ.) 2.4 1.47 (0.73) C 0.1 (0.33) A (1.05) 0.1 0.65 Unit : mm 0.2 0.1 0.65 0.1 0.5 0.5 0.2 0.1 0.65 0.65 0.1 0.7 0.85 PCB Pattern (0.47) 1.6 0.1 • Detecting the location of CD/DVD optical pickup head • Detecting the location of lens for DSC and Cellular Phone’s camera module • End detection of VCR tape • Rotation detection of various motors PT CENTER LED CENTER 0.85 0.8 A:anode K:cathode C:collector E:emitter ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Emitter Forward Current (Continuous) Reverse Voltage (Continuous) Power Dissipation Detector Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Coupled Total Power Dissipation Operating Temperature Storage Temperature Reflow Soldering Temperature SYMBOL IF VR PD VCEO VECO IC PC Ptot Topr Tstg Tsol RATINGS 30 6 45 16 6 10 25 60 -20 to +85 -40 to +85 260 UNIT mA V mW V V mA mW mW °C °C °C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER Emitter Forward Voltage Reverse Current Capacitance Detector Dark Current Collector-Emitter Voltage Coupled Output Current Operating Dark Current *1 Rise Time Fall Time SYMBOL VF IR Ct ICEO VCEO IO ICEOD tr tf TEST CONDITION IF=4mA VR=6V VR=0V,f=1MHz VCE=10V IC=100µA IF=4mA,VCE=2V,d=0.7mm IF=4mA,VCE=2V IO=100µA,VCE=2V,RL=1KΩ,d=0.7mm IO=100µA,VCE=2V,RL=1KΩ,d=0.7mm MIN TYP MAX 1.4 10 UNIT V µA pF µA V µA µA µs µs — — — — 16 120 — — 25 — 0.2 — — — — 30 30 — 380 2 — — — — — *1 Icoed may increase according to the periphery situation of the surface mounted product. 0.5 0.4 0.5 -1- 0.1 APPLICATIONS E K 0.5 0.5 NJL5901R OUTPUT CURRENT TEST CONDITION The infrared signal from LED is reflected at the aluminum surface. DARK CURRENT TEST CONDITION Light Sealed Dark Box 0.7mm Aluminum Evapolation Surface Io IF IF ICEOD VCE VCE RESPONSE TIME TEST CONDITION Aluminum Evapolation Surface RD P.G IF RL Io V+ 0.7mm Input 90% Output 10% OSC tr tf EDGE RESPONSE TEST CONDITION l=0mm l=0mm 0.7mm Aluminum Evaporation Surface Aluminum Evaporation Surface 0.7mm -2- NJL5901R Power Dissipation vs. Temperature 100 90 80 Power Dissipation P(mW) Forward Current IF(mA) 70 60 50 40 30 20 10 0 0 20 40 60 80 100 Ambient Temperature Ta(°C) 50 45 40 35 30 25 20 15 10 Forward Current vs. Temperature Total Power Dissipation Collector Power Dissipation 5 0 0 20 40 60 80 100 Ambient Temperature Ta(°C) TYPICAL CHARACTERISTICS Forward Voltage vs. Forward Current 100 1.6 Forward Voltage vs. Temperature 1.4 Forward Current IF(mA) Forward Voltage VF(V) IF=30mA 1.2 10 IF=4mA 1 1 0 1 Forward Voltage VF(V) 2 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(°C) Dark Current vs. Temperature 10000 Operating Dark Current vs. Temperature 10 1000 Operating Dark Current Iceod(µA) Dark Current Iceo(nA) 100 1 10 1 0.1 0.1 0.01 Vce=10V IF=4mA,Vce=2V 0.01 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(°C) Ambient Temperature Ta(°C) 0.001 -3- NJL5901R Output Current vs. Forward Current (Ta=25° C) 1000 900 800 Output Current Io(µA) 700 600 500 400 300 200 100 Relative Output Current Io/Io(25 C)(%) ° 100 120 Output Current vs. Temperature 80 60 40 20 IVce=2V,d=0.7m 0 0 2 4 6 8 10 Forward Current IF(mA) 0 -40 -20 0 20 40 IF=4mA,Vce=2V 60 80 100 Ambient Temperature Ta(°C) Output Characteristics (Ta=25°C) 1000 900 800 0.5 Vce Saturation (Ta=25°C) IF=10mA 0.4 IF=8mA Output Current Io(µA) 700 600 500 400 300 200 Collector-Emitter Voltage Vce(V) 0.3 Io=400µA Io=300µA Io=200µA Io=100µA IF=6mA 0.2 IF=4mA 0.1 IF=2mA 100 0 0 1 2 3 4 5 Collector-Emitter Voltage Vce(V) 0 0.1 1 Forward Current IF(mA) 10 Output Current vs. Distance (Ta=25°C) 120 Output Current vs. Edge Distance (Ta=25°C) 120 IF=4mA,Vce=2V,d=0.7mm Relative Output Current Io/Io(max.)(%) 100 Relative Output Current Io/Io(max.)(%) 100 IF=4mA,Vce=2V 80 Direction Y 80 60 60 40 40 Direction X 20 20 0 0 1 2 3 4 5 Reflector Distance d(mm) 0 0 0.4 0.8 1.2 1.6 2 2.4 Edge Distance l(mm) -4- NJL5901R Spectral Response (Ta=25° C) 120 1000 Switching Time vs. Load Resistance (Ta=25° C) 100 Relative Response (%) Vce=2V 80 Switching Time t(µs) 100 tr tf 60 td 10 40 20 Vce=2V,Io=100µA 1 600 700 800 900 1000 0.1 1 Load Resistance RL(k Ω ) 10 Wavelength λ(nm) 0 500 -5- NJL5901R PRECAUTION FOR HANDLING 1. Soldering to actual circuit board Soldering condition The surface temperature of plastic package is lower than 260 °C. Soldering Method 1) Reflow Method Soldering to be done within twice under the recommended condition mentioned below f 260°C 230°C 220°C 180°C 150°C e d a : Temperature ramping rate b : Pre-heating temperature time c : Temperature ramping rate d : 220°C or higher time e : 230°C or higher time f : Peak temperature g : Temperature ramping rate : 1 to 4°C/s : 150 to 180°C : 60 to 120s : 1 to 4°C /s : Shorter than 60s : Shorter than 40s : Lower than 260°C : 1 to 6°C /s The temperature of the surface of mold package Room Temp. a b c g 2) Reflow Method (In case of infrared heating) The temperature profile is same as the above Avoid direct irradiation to the plastic package because it may absorb the Infrared Radiation and its surface temperature will be higher than the lead. 3) The other method Avoid rapid heating up like dipping the devices directly into the melting solder or vapor phase method (VPS). Solder the device in short time as soon as possible. If the device is heated and kept in high temperature for longer time, its reliability would be affected. 2. Cleaning Avoid washing the device after soldering by reflow method. 3. Attention in handling 1) Treat not to touch the lens surface. 2) Avoid dust and any other foreign materials on the lens surface such as paint, bonding material, etc. 4. Storage Mount the device as soon as possible after opening the envelope. In order to prevent from degradation by the moisture at the reflow process, the device is contained in deaeration packaging. -6- NJL5901R NJL5901R Taping Specification 1. Taping Size 1) Carrier tape is used with Styrene type Carbonated Plastic. 2) Cover tape is used with electro statistically prevention treated Polyester type tape. 3) Product taping direction is to place the index mark against the pull out direction of the tape as in the drawing. (TE1) Pull out direction of tape UNIT : mm 2.0 4.0 φ 1.5 0.2 1.75 3.5 2.75 8.0 1.8 4.0 Carrier Tape Cover Tape 1.2 2. Taping Strength Pull up the cover tape from the carrier tape, and when the opening angle comes around 10 to 15°, and the peeling-off strength is to be within the power of 20 to 70g. 3. Packaging 1) The taped products are to be rolled up on the taping reel as on the drawing. 2) Rolling up specification 2-1) Start rolling : Carrier tape open space more than 20 Pieces. 2-2) End of rolling : Carrier tape open space more than 20 Pieces, and 2 round of reel space at the cover tape only. 3) Taping quantity : 2,000 Pieces. 4) Seal off after putting each reels in a damp proof bag with silica gel (3 bags). Label 8.5 φ 13 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. φ 60 φ 180 -7-
NJL5901R 价格&库存

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