LM112

LM112 LM212 LM312 Operational Amplifiers September 1992 LM112 LM212 LM312 Operational Amplifiers General Description The LM112 series are micropower operational amplifiers with very low offset-voltage and input-current errors at least a factor of ten better than FET amplifiers over a b 55 C to a 125 C temperature range Similar to the LM108 series that also use supergain transistors they differ in that they include internal frequency compensation and have provisions for offset adjustment with a single potentiometer These amplifiers will operate on supply voltages of g 2V to g 20V drawing a quiescent current of only 300 mA Performance is not appreciably affected over this range of voltages so operation from unregulated power sources is easily accomplished They can also be run from a single supply like the 5V used for digital circuits The LM112 series are the first IC amplifiers to improve reliability by including overvoltage protection for the MOS compensation capacitor Without this feature IC’s have been known to suffer catastrophic failure caused by short-duration overvoltage spikes on the supplies Unlike other internally-compensated IC amplifiers it is possible to overcompensate with an external capacitor to increase stability margin The LM212 is identical to the LM112 except that the LM212 has its performance guaranteed over a b25 C to a 85 C temperature range instead of b55 C to a 125 C The LM312 is guaranteed over a 0 C to a 70 C temperature range Features Y Y Y Y Maximum input bias current of 3 nA over temperature Offset current less than 400 pA over temperature Low noise Guaranteed drift specifications Connection Diagram Metal Can Package TL H 7751 – 4 Top View Order Number LM112H LM212H LM312H or LM112H 883 See NS Package Number H08C Auxiliary Circuits Offset Balancing Overcompensation for Greater Stability Margin TL H 7751 – 2 TL H 7751 – 3 C1995 National Semiconductor Corporation TL H 7751 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 5) LM112 LM212 LM312 g 20V g 18V Supply Voltage Power Dissipation (Note 1) 500 mW 500 mW g 10 mA g 10 mA Differential Input Current (Note 2) g 15V g 15V Input Voltage (Note 3) Output Short-Circuit Duration Continuous Continuous Operating Temperature Range b 55 C to a 125 C LM112 0 C to a 70 C b 25 C to a 85 C LM212 b 65 C to a 150 C b 65 C to a 150 C Storage Temperature Range 300 C Lead Temperature (Soldering 10 sec ) 300 C ESD rating to be determined Electrical Characteristics (Note 4) Parameter Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Supply Current Large Signal Voltage Gain Input Offset Voltage Average Temperature Coefficient of Input Offset Voltage Input Offset Current Average Temperature Coefficient of Input Offset Current Input Bias Current Supply Current Large Signal Voltage Gain Output Voltage Swing Input Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio TA e 125 C VS e g 15V VOUT e g 10V RL t 10 kX VS e g 15V RL e 10 kX VS e g 15V 25 g 13 g 13 5 g 14 Conditions TA e 25 C TA e 25 C TA e 25 C TA e 25 C TA e 25 C TA e 25 C VS e g 15V VOUT e g 10V RL t 10 kX LM112 LM212 Min Typ 07 0 05 08 30 70 03 50 300 30 30 15 04 05 25 30 0 15 04 15 g 13 g 14 LM312 Max 20 02 20 10 06 25 Min Typ 20 02 15 40 03 300 10 60 30 15 20 10 10 08 Max 75 1 7 Units mV nA nA MX mA V mV mV mV C nA pA C nA mA V mV g 14 V V 85 80 100 96 80 80 100 96 dB dB Note 1 The maximum junction temperature of the LM112 is 150 C LM212 is 100 C and LM312 is 85 C For operating at elevated temperatures devices in the H08 package must be derated based on a thermal resistance of 160 C W junction to ambient or 20 C W junction to case Note 2 The inputs are shunted with shunt diodes for overvoltage protection Therefore excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used Note 3 For supply voltages less than g 15V the absolute maximum input voltage is equal to the supply voltage Note 4 These specifications apply for g 5V s VS s g 20V and b 55 C s TA s a 125 C (LM112) b 25 C s TA s a 85 C (LM212) g 5V s VS s g 15V and 0 C s TA s a 70 C (LM312) unless otherwise noted Note 5 Refer to RETS112X for LM112H military specifications 2 Typical Performance Characteristics LM112 Input Currents Offset Error LM212 Drift Error Input Noise Voltage Power Supply Rejection Closed Loop Output Impedance Voltage Gain Output Swing Supply Current Open Loop Frequency Response Large Signal Frequency Response Voltage Follower Pulse Response TL H 7751 – 5 3 Typical Performance Characteristics LM312 Input Currents Offset Error Drift Error Input Noise Voltage Power Supply Rejection Closed Loop Output Impedance Voltage Gain Output Swing Supply Current Open Loop Frequency Response Large Signal Frequency Response Voltage Follower Pulse Response TL H 7751 – 6 4 Schematic Diagram TL H 7751 – 1 5 LM112 LM212 LM312 Operational Amplifiers Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM112H LM212H LM312H or LM112H 883 NS Package Number H08C LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications