LM733

LM733 LM733C Differential Amplifier August 1989 LM733 LM733C Differential Amplifier General Description The LM733 LM733C is a two-stage differential input differential output wide-band video amplifier The use of internal series-shunt feedback gives wide bandwidth with low phase distortion and high gain stability Emitter-follower outputs provide a high current drive low impedance capability Its 120 MHz bandwidth and selectable gains of 10 100 and 400 without need for frequency compensation make it a very useful circuit for memory element drivers pulse amplifiers and wide band linear gain stages The LM733 is specified for operation over the b55 C to a 125 C military temperature range The LM733C is specified for operation over the 0 C to a 70 C temperature range Features Y Y Y Y Y 120 MHz bandwidth 250 kX input resistance Selectable gains of 10 100 400 No frequency compensation High common mode rejection ratio at high frequencies Applications Y Y Y Y Y Magnetic tape systems Disk file memories Thin and thick film memories Woven and plated wire memories Wide band video amplifiers Connection Diagrams Dual-In-Line Package Metal Can Package TL H 7866 – 2 Note Pin 5 connected to case Top View Order Number LM733H or LM733CH See NS Package Number H10D TL H 7866 – 1 Top View Order Number LM733CN See NS Package Number N14A C1995 National Semiconductor Corporation TL H 7866 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Diffential Input Voltage Common Mode Input Voltage VCC Output Current g 5V g 6V g 8V Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Operating Temperature Range LM733 LM733C Lead Temperature (Soldering 10 sec ) 500 mW a 150 C b 65 C to a 150 C b 55 C to a 125 C 0 C to a 70 C 10 mA 260 C Electrical Characteristics (TA e 25 C Characteristics Differential Voltage Gain Gain 1 (Note 2) Gain 2 (Note 3) Gain 3 (Note 4) Bandwidth Gain 1 Gain 2 Gain 3 Rise Time Gain 1 Gain 2 Gain 3 Propagation Delay Gain 1 Gain 2 Gain 3 Input Resistance Gain 1 Gain 2 Gain 3 Input Capacitance Input Offset Current Input Bias Current Input Noise Voltage Input Voltage Range Common Mode Rejection Ratio Gain 2 Gain 2 Supply Voltage Rejection Ratio Gain 2 Output Offset Voltage Gain 1 Gain 2 and 3 Output Common Mode Voltage Output Voltage Swing Output Sink Current Output Resistance Power Supply Current 1 RL e % 1 1 Gain 2 Test Circuit unless otherwise specified see test circuits VS e g 6 0V) LM733 Min 300 90 90 Typ 400 100 10 40 90 120 Max 500 110 11 Min 250 80 80 LM733C Typ 400 100 10 40 90 120 10 5 45 25 75 60 36 40 30 250 20 30 20 04 90 12 g1 0 Test Conditions Units Max 600 120 12 MHz MHz MHz ns ns ns ns ns ns kX kX kX pF 50 30 mA mA mVrms V 1 RL e 2 kX VOUT e 3 Vp-p 2 VOUT e 1 Vp-p 2 VOUT e 1 Vp-p 2 10 5 45 25 75 60 36 40 30 250 20 04 90 10 12 10 10 20 10 BW e 1 kHz to 10 MHz g1 0 12 VCM e g 1V f s 100 kHz VCM e g 1V f e 5 MHz DVS e g 0 5V RL e % RL e % RL e 2k 60 86 60 70 06 0 35 15 10 34 60 86 60 70 06 0 35 15 15 34 dB dB dB V V V 1 1 1 1 50 50 24 30 25 29 40 36 20 18 24 30 25 29 40 36 20 mA X 24 mA 24 18 2 Electrical Characteristics (Continued) (The following specifications apply for b55 C k TA k 125 C for the LM733 and 0 C k TA k 70 C for the LM733C VS e g 6 0V) Characteristics Differential Voltage Gain Gain 1 Gain 2 Gain 3 Input Resistance Gain 2 Input Offset Current Input Bias Current Input Voltage Range Common Mode Rejection Ratio Gain 2 Supply Voltage Rejection Ratio Gain 2 Output Offset Voltage Gain 1 Gain 2 and 3 Output Voltage Swing Output Sink Current Power Supply Current 1 RL e % 1 1 1 1 1 VCM e g 1V f s 100 kHz DVS e g 0 5V RL e % RL e 2k 25 22 27 g1 Test Circuit Test Conditions Min 200 80 80 8 LM733 Typ Max 600 120 12 0 5 40 g1 LM733C Min 250 80 80 8 6 40 Typ Max 600 120 12 0 Units 1 RL e 2 kX VOUT e 3 Vp-p kX mA mA V dB dB 15 15 V V Vpp mA 27 mA 50 50 15 12 50 50 28 25 Note 1 The maximum junction temperature of the LM733 is 150 C while that of the LM733C is 100 C For operation at elevated temperatures devices in the TO100 package must be derated based on a thermal resistance of 150 C W junction to ambient or 45 C W junction to case Thermal resistance of the dual-in-line package is 90 C W Note 2 Pins G1A and G1B connected together Note 3 Pins G2A and G2B connected together Note 4 Gain select pins open Note 5 Refer to RETS733X drawing for specifications of LM733H version Typical Performance Characteristics Pulse Response Pulse Response vs Temperature Pulse Response vs Supply Voltage Phase Shift vs Frequency Phase Shift vs Frequency Differential Overdrive Recovery Time TL H 7866 – 6 3 Typical Performance Characteristics (Continued) Voltage Gain vs Frequency Gain vs Frequency Temperature Gain vs Frequency vs Supply Voltage Voltage Gain vs RADJ Voltage Gain vs Temperature Voltage Gain vs Supply Voltage Output Voltage Swing vs Frequency Supply Current Output Voltage and Current Swing vs Supply Voltage Output Voltage Swing vs Load Resistance Common Mode Rejection Ratio vs Frequency Input Noise Voltage vs Source Resistance Supply Current and Input Resistance vs Temperature TL H 7866 – 7 4 Test Circuits Test Circuit 1 Test Circuit 2 TL H 7866 – 3 TL H 7866 – 4 Voltage Gain Adjust Circuit TL H 7866 – 5 VS e 6V TA e 25 C (Pin numbers apply to TO-5 package) Schematic Diagram TL H 7866 – 8 5 LM733 LM733C Differential Amplifier Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM733H or LM733CH NS Package Number H10D Molded Dual-In-Line Package (N) Order Number LM733CN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications