2N5192

2N5192 Silicon NPN Transistor Audio Power Amp, Switch TO−126 Type Package Description: The 2N5192 is a silicon NPN transistor in a TO−126 plastic package designed for use in power amplifier and switching circuits. Features: D Excellent Safe Area Limits Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 0.1A, IB = 0, Note 1 ICEO VCE = 80V, IB = 0 − − 1.0 mA ICEX VCE = 80V, VEB(off) = 1.5V − − 0.1 mA VCE = 80V, VEB(off) = 1.5V, TC = +150C − − 2.0 mA ICBO VCB = 80V, IE = 0 − − 0.1 mA IEBO VBE = 5V, IC = 0 − − 1.0 mA Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 1.5A, VCE = 2V 20 − 80 IC = 4A, VCE = 2V 7 − − IC = 1.5A, IB = 0.15A − − 0.6 V IC = 4A, IB = 1A − − 1.4 V IC = 1.5A, VCE = 2V − − 1.2 V 2.0 − − MHz ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage Base−Emitter ON Voltage VCE(sat) VBE(on) Dynamic Characteristics Current Gain−Bandwidth Product fT IC = 1A, VCE = 10V, f = 1MHz Note 1. Pulse test: Pulse Width  300s, Duty Cycle  2%. .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max