2N5416

2N5416 Silicon PNP Transistor Power Amplifier & High Speed Switch (Compl to NTE396) Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1 300 − − V Collector Cutoff Current ICBO VCB = 280V, IE = 0 − − 50 μA Emitter Cutoff Current IEBO VEB = 6V, IC = 0 − − 20 μA hFE IC = 50mA, VCE = 10V 30 − 120 Output Capacitance Cobo VCB = 10V, IE = 0, f = 1MHz − − 15 pF Input Capacitance Cibo VCB = 5V, IC = 0, f = 1MHz − − 75 pF Small−Signal Current Gain hfe IC = 10mA, VCE = 10V, f = 1MHz 25 − − Re(hie) VCE = 10V, IC = 5mA, f = 1MHz − − 300 ON Characteristics DC Current Gain Small−Signal Characteristics Real Part of Input Impedance Note 1. Pulse Test; Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. CAUTION: The sustaining voltage must not be measured on a curve tracer. Ω .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)