2N5416

® 2N5415 2N5416 SILICON PNP TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot P tot T stg Parameter 2N5415 Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Base Current Total Dissipation at T c ≤ 2 5 C Total Dissipation at T amb ≤ 5 0 o C Storage Temperature o Value 2N5416 -350 -300 -6 -1 -0.5 10 1 -65 to 200 -200 -200 -4 Unit V V V A A W W o C December 2000 1/4 2N5415 / 2N5416 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO V CER ∗ Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-Emitter Sustaining Voltage Test Conditions for 2 N5415 for 2 N5416 V CE = - 150 V for 2 N5415 for 2 N5416 I C = - 50 mA I C = - 10 mA for 2 N5415 for 2 N5416 I C = - 50 mA I C = - 50 mA I C = - 50 mA for 2 N5415 for 2 N5416 I C = - 5 mA I C = - 10 mA IE = 0 I B = -5 mA V CE = - 10 V V CE = - 10 V 30 30 V CE = - 10 V V CE = -10 V f = 1KHz f = 5MHz f = 1MHz 25 15 25 MHz pF 150 120 VEB = - 4 V VEB = - 6 V R BE = 5 0 Ω f or 2 N5416 -350 VCB = -175 V VCB = -280 V Min. Typ. Max. -50 -50 -50 -20 -20 Unit µA µA µA µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain -200 -300 -2.5 -1.5 V V V V h fe fT C CBO Small Signal Current Gain Transition frequency Collector Base Capacitance V CB = - 10 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 2N5415 / 2N5416 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 3/4 2N5415 / 2N5416 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4