2N6284

2N6284 (NPN) Silicon Complementary Darlington Transistors Power Amplifier Description: The 2N6284 (NPN) is a silicon complementary Darlington transistor in a TO3 type case designed for general−purpose amplifier and low−frequency switching applications. Features: D High DC Current Gain @ IC = 10A: hFE = 2400 Typ D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 − − V OFF Characteristics Collector−Emitter SustainingVoltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0 ICEO VCE = 50V, IE = 0 − − 1.0 mA ICEX VCE = 100V, VBE(off) = 1.5V − − 0.5 mA VCE = 100V, VBE(off) = 1.5V, TA = +150°C − − 5.0 mA IEBO VBE = 5V, IC = 0 − − 2.0 mA hFE VCE = 3V, IC = 10A 750 − 18000 VCE = 3V, IC = 20A 100 − − IC = 10A, IB = 40mA − − 2.0 V IC = 20A, IB = 200mA − − 3.0 V ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 20A, IB = 200mA − − 4.0 V Base−Emitter ON Voltage VBE(on) VCE = 3V, IC = 10A − − 2.8 V Dynamic Characteristics Small−Signal Current Gain hfe VCE = 3V, IC = 10A, f = 1kHz 300 − − Magnitude of Common Emitter Small−Signal Short−Circuit Forward Current Transfer Ratio |hfe| VCE = 3V, IC = 10A, f = 1MHz 4.0 − − MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz − − 400 pF Note 1. Pulse Test: Pulse Width = 300μs, Duty Cycle = 2% Schematic Diagram C B C B E NPN E PNP .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case