2N6284

® 2N6284 2N6287 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6284 is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. The complementary PNP types is 2N6287. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 8 KΩ R2 Typ. = 60 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 2N6284 2N6287 100 100 5 20 40 0.5 160 -65 to 200 200 Unit V V V A A A W o C o C For PNP types voltage and current values are negative. December 2000 1/4 2N6284 / 2N6287 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.09 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CEO Parameter Collector Cut-off Current (V BE = - 1.5V) Test Conditions V CE = r ated V CEO V CE = r ated V CEO V CE = 5 0 V V EB = 5 V I C = 1 00 mA IC = 10 A IC = 20 A IC = 20 A IC = 10 A IC = 10 A IC = 20 A IC = 3 A I B = 4 0 mA I B = 2 00 mA I B = 2 00 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 1 0 V f = 1KHz f = 100KHz 400 600 pF pF 750 100 300 100 2 3 4 2.8 18000 T c = 1 50 o C Min. Typ. Max. 0.5 5 1 2 Unit mA mA mA mA V V V V V Collector Cut-off Current (I B = 0 ) I EBO Emitter Cut-off Current (I C = 0 ) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ Collector-Emitter Saturation Voltage V BE(sat) ∗ V BE ∗ h FE ∗ hfe C CBO Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain Collector Base Capacitance IE = 0 V CB = 1 0 V for N PN types for P NP types ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 2N6284 / 2N6287 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E 2N6284 / 2N6287 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4