BUX10

BUX10 Silicon NPN Transistor Power Amp, Switch TO−3 type Package Description: The BUX10 is a silicon multiepitaxial planar NPN transistor in a TO−3 type package designed for use in switching and linear applications in industrial equipment. Features: D High Current Capability D Fast Switching Speed Applications: D Motor Control D Linear and Switching Industrial Equipment Absolute Maximum Ratings: Collector−Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125V Collector−Emitter Voltage (VBE = −1.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter−Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (tp 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC  +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Symbol Min Typ Max Unit VCE = 160V, VEB(off) = −1.5V − − 1.5 mA VCE = 160V, VEB(off) = −1.5V, TC = +125C − − 6.0 mA ICEO VCE = 100V, IB = 0 − − 1.5 mA IEBO VEB = 5V, IC = 0 − − 1.0 mA ICEX Test Conditions Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Collector−Emitter Sustaining Voltage Test Conditions Min Typ Max Unit VCEO(sus) IC = 200mA, IB = 0, Note 1 125 − − V IE = 50mA, IE = 0 7 − − V IC = 10A, IB = 1.0A, Note 1 − 0.3 0.6 V IC = 20A, IB = 2.0A, Note 1 − 0.7 1.2 V IC = 20A, IB = 2.0A, Note 1 − 1.6 2.0 V VCE = 2V, IC = 10A 20 − 60 VCE = 4V, IC = 20A 10 − − VCE = 30V, t = 1s 5 − − A VCE = 48V, t = 1s 1 − − A Emitter−Base Voltage VEBO Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) DC Current Gain hFE Second Breakdown Collector Current IS/b Transistor Frequency fT VCE = 15V, IC = 1A, f = 10MHz 8 − − MHz Turn−On Time ton VCC = 30V, IC = 20A, IB1 = 2A − 0.5 1.5 s Storage Time ts − 0.6 1.2 s Fall Time tf VCC = 30V, IC = 20A, IB1 = −IB2 =2A − 0.15 0.3 s Vclamp = 125V, L = 500H 20 − − A Clamped Es/b Collector Current Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case