BUX10_03

® BUX10 HIGH POWER NPN SILICON TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 DESCRIPTION The BUX10 is a silicon Multi-Epitaxial Planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-base Voltage (I E = 0 ) Collector-emitter Voltage (V BE = - 1 .5V) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0 ) Collector Current Collector Peak Current (t P < 10 ms) Base Current Total Power Dissipation at T case Storage Temperature ≤ 25 oC Value 160 160 125 7 25 30 5 150 -65 to 200 200 Unit V V V V A A A W o o C C Max Operating Junction Temperature March 2003 1/4 BUX10 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO I CEX Parameter Collector Cut-off Current (I B = 0 ) Collector Cut-off Current Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 1 00 V V CE = 1 60 V T case = 125 o C V CE = 160 V V EB = 5 V I C = 2 00 mA 125 V BE = - 1.5V V BE = - 1.5V Min. Typ. Max. 1.5 1.5 6 1 Unit mA mA mA mA V I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) ∗ V BE(sat) ∗ h FE I S/b fT t on ts tf Emitter-Base Voltage (I C = 0 ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Second Breakdown Collector Current Transistor Frequency Turn-on Time Storage Time Fall Time Clamped E s/b Collector Current I E = 5 0 mA IC = 10 A IC = 20 A IC = 20 A IC = 10 A IC = 20 A V CE = 3 0 V V CE = 4 8 V IC = 1 A f = 10MHz IC = 20 A V CC = 30V IC = 20 A V CC = 30V V clamp =125 V L = 500 µ H IB = 1 A IB = 2 A IB = 2 A V CE = 2 V V CE = 4 V t=1s t=1s V CE = 15 V I B1 = 2 A I B1 = - I B2 = 2A 7 0.3 0.7 1.6 20 10 5 1 8 0.5 0.6 0.15 20 1.5 1.2 0.3 0.6 1.2 2 60 V V V V A A MHz µs µs µs A ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 % 2/4 BUX10 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E BUX10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4