NTE102A

NTE102A (PNP) & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +90°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Voltage VCBO IC = 200μA, IE = 0 32 - - V Collector Cutoff Current ICBO VCB = 10V, IE = 0 - - 25 μA DC Current Gain hFE1 VCB = 0, IE = 50mA 63 - 295 hFE2 VCB = 0, IE = 300mA 69 - 273 Common-Emitter Cutoff Frequency fαe VCB = 2V, IE = 10mA 10 - - kHz Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA - 0.17 - V VCB = 5V, IE = 5mA, f = 1kHz - - 25 dB Noise Figure NF .240 (6.09) Dia Max .410 (10.4) Max .750 (19.1) Min .018 (0.45) .071 (1.82) Dia Base Emitter Collector