NTE112

NTE112 Silicon Small Signal Schottky Diode Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Surge Non-Repetitive Forward Current (tp ≤ 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +150°C Thermal Resistance, Junction-to-Ambient (Note 1), Rth (j- a) . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W Maximum Lead Temperature (During soldering, 4mm from case, 10s max), TL . . . . . . . . . . +230°C Note 1. On infinite heatsink with 4mm lead length. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IR = 100μA 5 - - V Static Characteristics Breakdown Voltage V(BR) Forward Voltage Drop VF IF = 10mA, Note 2 - - 0.55 V Reverse Current IR VR = 1V, Note 2 - - 0.05 μA Capacitance C VR = 0V, f = 1MHz - - 1 pF Stored Charge QS IF = 10mA, Note 3 - - 3 pC F f = 1GHz, Note 4 - 6 7 dB Dynamic Characteristics Frequency Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle < 2%. Note 3. Measured on a B-line Electronics QS-3 stored charge meter. Note 4. Noise Figure Test: - Diode is inserted in a tuned stripline circuit. Local oscillator frequency 1GHz Local oscillator power 1mW Intermediate frequency amplifier, tuned on 30MHz, has a noise figure, 1.5dB. 1.000 (25.4) Min .022 (.509) Dia Max .200 (5.08) Max .090 (2.28) Dia Max Color Band Denotes Cathode