NTE2384

NTE2384 MOSFET N−Channel Enhancement Mode, High Speed Switch TO3 Type Package Absolute Maximum Ratings: Drain−Source Voltage (TJ = +255 to +1505C), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain−Gate Voltage (TJ = +255 to +1505C, RGS = 1M+ ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate−Source Voltage, VGS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Transient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Drain Current (TC = +255C), ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Pulsed (TJM = +1505C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Total Dissipation (TC = +255C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Operating Junction Temperature, TJM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7K/W Typical Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.25K/W Lead Temperature (During Soldering, 1.6mm from Case, 10sec), TL . . . . . . . . . . . . . . . . . . . +3005C Electrical Characteristics: (TJ = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 900 − − V VGS = 0, VDS = 640V, TJ = +255C − − 250 3A VGS = 0, VDS = 640V, TJ = +1255C − − 1.0 mA VDS = 0, VGS = +20V − − +100 nA 2.0 − 4.5 V Static Characteristics Drain−Source Breakdown Voltage V(BR)DSS Zero−Gate Voltage Drain Current IDSS Gate−Body Leakage Current IGSS ID = 3mA, VGS = 0 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 2503A Static Drain−Source On Resistance RDS(on) VGS = 10V, ID = 3A, Note 1 − − 1.4 + Dynamic Characteristics Forward Transconductance gfs VDS = 10V, ID = 3A, Pulse Test 4 6 − S Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz − 2600 − pf Output Capacitance Coss − 180 − pf Reverse Transfer Capacitance Crss − 45 − pf Turn−On Time td(on) − 35 100 ns − 40 110 ns td(off) − 100 200 ns tf − 60 100 ns Rise Time Turn−Off Delay Time Fall Time tr VGS = 10V, VDS = 450V, ID = 3A, RG = 4.7+ (External) Note 1. Pulse test, t 3 3003s, duty cycle d 3 2%. Rev. 10−13 Electrical Characteristics (Cont’d): (TJ = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 88 130 nC Dynamic Characteristics (Cont’d) Total Gate Charge Qg(on) VGS = 10V, VDS = 450V, ID = 3A Gate−Source Charge Qgs − 21 30 nC Gate−Drain Charge Qgd − 38 70 nC VGS = 0 − − 6 A Source−Drain Diode Ratings and Characteristics Continuous Reverse Drain Current IDR Pulsed Reverse Drain Current IDRM TJM = +1505C − − 24 A Diode Forward Voltage VSD IF = IDR, VGS = 0, Note 1 − − 1.5 V Reverse Recovery Time trr IF = IDR, −di/dt = 100A/3s, VR = 100V − 900 − ns Note 1. Pulse test, t 3 3003s, duty cycle d 3 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane D .312 (7.93) Min .040 (1.02) Case G Source 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Gate .525 (13.35) R Max Drain/Case S