NTE2427

NTE2426 (NPN) & NTE2427 (PNP) Silicon Complementary Transistors Darlington Switch Description: The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay, and lamp drivers. Absolute Maximum Ratings: Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature (Note 2), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Ambient (Note 1, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . 125K/W Thermal Resistance, Junction–to–Tab (Note 2), RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm. Note 2. Based on maximum average junction temperature in line with common industrial practice. The resulting higher junction teperature of the output transistor part is taken into account. Electrical Characteristics: (TJ = +25°C unles otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICES VCER = 80V, VBE = 0 – – 10 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 10 µA DC Current Gain hFE VCE = 10V, IC = 150mA, Note 3 1000 – – VCE = 10V, IC = 500mA, Note 3 2000 – – Note 3. Measured under pulsed conditions. Electrical Characteristics (Cont’d): (TJ = +25°C unles otherwise specified) Parameter Symbol Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage VBE(sat) Turn–On Time ton Turn–Off Time toff Test Conditions Min Typ Max Unit IC = 500mA, IB = 0.5mA – – 1.3 V IC = 500mA, IB = 0.5mA, TJ = +150°C – – 1.3 V IC = 500mA, IB = 0.5mA – – 1.9 V IC = 500mA, IBon = –IBoff = 0.5mA – 400 – ns – 1500 – ns Schematic Diagram NTE2426 NPN NTE2427 PNP C C B B E E .174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) E .015 (0.32) C .020 (.508) .059 (1.5) .118 (3.0) Bottom View B .041 (1.05) Min