NTE491T

NTE491T MOSFET N - Ch, Enhancement Mode High Speed Switch Features: D Zener Diode Input Protected D Low On - Resistance D Ultralow Threshold D Low Input Characteristics D Low Input and Output Leakage Applications: D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc, D Battery Operated Systems D Solid - State Relays D Inductive Load Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain - Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate - Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15/ - 0.3V Drain Current, ID Continuous (TJ = +150°C) TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mA TA = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation, PD TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TA = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55° to +150°C Thermal Resistance, Junction - to - Ambient, Rth (JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Static Characteristics Drain- Source Breakdown Voltage Gate Threshold Voltage Gate- Body Leakage Current Zero - Gate- Voltage Drain Current V(BR)DSS VGS = 0, ID = 100µA VGS(Th) IGSS IDSS Id(on) rDS(on) ID = 1mA, VDS = VGS VGS = 15V, VDS = 0 VDS = 48V, VGS = 0 VDS = 48V, VGS = 0, TJ = +125°C ON - State Drain Current Drain-Source ON Resistance VGS = 10V, VDS = 10V, Note 1 VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA, TJ = +125°C VGS = 5V, ID = 200mA Forward Transconductance Dynamic Characteristics Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1MHZ 60 pF gfs VDS = 10V, ID = 500mA 100 60 0.8 750 2.5 100 10 500 5.0 6.0 V V nA µA mA mA Ω Ω Ω mS Symbol Test Conditions Min Typ Max Unit 7.5 - Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 2) Turn - On Time Coss Crss tON VDD = 15V, RL = 23Ω, ID = 600mA, VGEN = 10V, RG = 25Ω - - 25 5 10 pF pF ns Turn - Off Time tOFF - - 10 ns Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. Switching time is essentially independent of operating temperature. .200 (5.08) .180 (4.57) .100 (2.54) SGD .180 (4.57) .594 (15.09) .018 (0.46) .015 (0.38) .050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R