NTE56039

NTE56039 TRIAC, 4A Sensitive Gate Description: The NTE56039 is a glass passivated TRIAC in a plastic SOT82 type package designed for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Absolute Maximum Ratings: Repetitive Peak Off−Sate Voltage (Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On−State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Non−Repetitive Peak On−State Current (Full Sine Wave, TJ = +25°C prior to Surge), ITSM t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A2sec Repetitive Rate−of−Rise of On−State Current after Triggering, dIT/dt (ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/μs) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/μs MT2 (+), G (−) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/μs MT2 (−), G (−) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/μs MT2 (−), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/μs Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Thermal Resistance, Junction−to−Mounting Base, RthJMB Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W Typical Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W Note 1. Although not recommended, off−state voltages up to 800V may be applied without damage, but the TRIAC may switch to the On−State. The rate−of−rise of current should not exceed 3A/μs. Rev. 8−12 Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 2.5 10 mA MT2 (+), G (−) − 4.0 10 mA MT2 (−), G (−) − 5.0 10 mA MT2 (−), G (+) − 11.0 25 mA − 3.0 15 mA MT2 (+), G (−) − 10 20 mA MT2 (−), G (−) − 2.5 15 mA MT2 (−), G (+) − 4.0 20 mA Static Characteristics Gate Trigger Current MT2 (+), G (+) IGT Latching Current MT2 (+), G (+) VD = 12V, IT = 0.1A IL VD = 12V, IT = 0.1A Holding Current IH VD = 12V, IT = 0.1A − 2.2 15 mA On−State Voltage VT IT = 5A − 1.4 1.7 V VD = 12V, IT = 0.1A − 0.7 1.5 V 0.25 0.4 − V VD = 600V, TJ = +125°C − 0.1 0.5 mA VDM = 402V, TJ = +125°C, Exponential Waveform, Gate Open − 50 − V/μs ITM = 6A, VD = 600V, IG = 0.1A, dIG/dt = 5A/μs − 2 − μs Gate Trigger Voltage VGT VD = 400V, IT = 0.1A, TJ = +125°C Off−State Leakage Current ID Dynamic Characteristics Critical Rate−of−Rise of Off−State Voltage dVD/dt Gate Controlled Turn−On Time tgt .307 (7.8) Max .100 (2.54) See Note .147 (3.75) .118 (3.0) Min .437 (11.1) Max MT1 MT2 G .100 (2.54) .602 (15.3) Min .090 (2.29) .047 (1.2) Note: Center Pin connected to metal part of mounting surface.