AFT09MS007NT1

Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps (dB) D (%) Pout (W) 870 (1) 15.2 71.0 7.3 136–941 MHz, 7 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 136–174 0.25 14.6 69.0 7.2 350–470 (2,5) 0.20 15.6 60.9 7.3 450–520 (3,5) 0.22 15.4 56.0 7.5 760–860 (4,5) 0.23 15.1 48.1 7.5 Result PLD--1.5W Load Mismatch/Ruggedness Frequency (MHz) Signal Type 870 (1) CW 1. 2. 3. 4. 5. VSWR Pin (W) Test Voltage > 65:1 at all Phase Angles 0.4 (3 dB Overdrive) 10.8 Gate Drain No Device Degradation Measured in 870 MHz narrowband test circuit. Measured in 350–470 MHz UHF broadband reference circuit. Measured in 450–520 MHz UHF broadband reference circuit. Measured in 760–860 MHz UHF broadband reference circuit. The values shown are the minimum measured performance numbers across the indicated frequency range. Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Features  Characterized for Operation from 136 to 941 MHz  Unmatched Input and Output Allowing Wide Frequency Range Utilization  Integrated ESD Protection  Integrated Stability Enhancements  Wideband — Full Power Across the Band  Exceptional Thermal Performance  Extreme Ruggedness  High Linearity for: TETRA, SSB  In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. Typical Applications  Output Stage VHF Band Handheld Radio  Output Stage UHF Band Handheld Radio  Output Stage for 700–800 MHz Handheld Radio  Freescale Semiconductor, Inc., 2013–2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT09MS007NT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +30 Vdc Gate--Source Voltage VGS –6.0, +12 Vdc Operating Voltage VDD 12.5, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature (1,2) TJ –40 to +150 C Total Device Dissipation @ TC = 25C Derate above 25C PD 114 0.91 W W/C Symbol Value (2,3) Unit RJC 1.1 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 74C, 7 W CW, 7.5 Vdc, IDQ = 100 mA, 870 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) B, passes 200 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 7.5 Vdc, VGS = 0 Vdc) IDSS — — 2 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 110 Adc) VGS(th) 1.6 2.1 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.1 Adc) VDS(on) — 0.12 — Vdc gfs — 9.8 — S Reverse Transfer Capacitance (VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.7 — pF Output Capacitance (VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 56 — pF Input Capacitance (VDS = 7.5 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz) Ciss — 107 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 7.5 Vdc, ID = 3 Adc) Dynamic Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) AFT09MS007NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 0.22 W, f = 870 MHz Common--Source Amplifier Output Power Drain Efficiency Pout — 7.3 — W D — 71.0 — % Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) Signal Type VSWR 870 CW > 65:1 at all Phase Angles Pin (W) 0.4 (3 dB Overdrive) Test Voltage, VDD Result 10.8 No Device Degradation AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 4 200 Ciss TA = 25C 3.5 IDS, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 100 Coss 10 Crss VGS = 3.75 Vdc 3 3.5 Vdc 2.5 2 1.5 3.25 Vdc 1 3 Vdc 0.5 Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 1 0 2 4 10 8 6 2.5 Vdc 0 0 12 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage Figure 3. Drain Current versus Drain--Source Voltage 109 MTTF (HOURS) VDD = 7.5 Vdc ID = 1.06 Amps 108 1.33 Amps 1.59 Amps 107 106 105 90 100 110 120 130 140 150 160 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 4. MTTF versus Junction Temperature — CW AFT09MS007NT1 4 RF Device Data Freescale Semiconductor, Inc. 870 MHz NARROWBAND PRODUCTION TEST FIXTURE C2 C3 B1 C11 C12 C10 C1 C13 C4* L1 C6 C8 C15* L2 C5 C16 L3 C7 C9 C14* AFT09MS007N Rev. 2 D49708 *C4, C14 and C15 are mounted vertically. Figure 5. AFT09MS007NT1 Narrowband Test Circuit Component Layout — 870 MHz Table 6. AFT09MS007NT1 Narrowband Test Circuit Component Designations and Values — 870 MHz Part Description Part Number Manufacturer B1 RF Bead, Short 2743019447 Fair-Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C12 0.1 F Chip Capacitors CDR33BX104AKWS Kemet C3, C11 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C10, C16 56 pF Chip Capacitors ATC100B560CT500XT ATC C5 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC C6, C7 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC C8, C9 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C13 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16-RH Multicomp C14, C15 3.6 pF Chip Capacitors ATC100B3R6CT500XT ATC L1 8.0 nH Inductor A03TKLC Coilcraft L2 18.5 nH Inductor A05TKLC Coilcraft L3 5.0 nH Inductor A02TKLC Coilcraft PCB Rogers RO4350B, 0.030, r = 3.66 D49708 MTL AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 5 VBIAS C1 VSUPPLY + + C2 C3 C10 B1 C11 C12 C13 L2 C4 RF INPUT Z1 C8 L1 Z2 Z3 Z4 Z5 C6 Z6 Z8 Z9 C15 Z10 Z11 Z13 L3 RF Z15 OUTPUT Z14 Z7 C9 C5 Z12 C16 C14 C7 Figure 6. AFT09MS007NT1 Narrowband Test Circuit Schematic — 870 MHz Table 7. AFT09MS007NT1 Narrowband Test Circuit Microstrips — 870 MHz Microstrip Description Microstrip Description Z1 0.328  0.080 Microstrip Z9 0.295  0.620 Microstrip Z2 0.490  0.120 Microstrip Z10 0.046  0.620 Microstrip Z3 0.610  0.320 Microstrip Z11 0.159  0.620  0.320 Taper Z4 0.160  0.320  0.620 Taper Z12 0.379  0.320 Microstrip Z5 0.058  0.620 Microstrip Z13 0.055  0.320 Microstrip Z6 0.288  0.620 Microstrip Z14 0.665  0.120 Microstrip Z7 0.394  0.620 Microstrip Z15 0.238  0.080 Microstrip Z8 0.398  0.620 Microstrip AFT09MS007NT1 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 870 MHz 12 Pout, OUTPUT POWER (WATTS) VDD = 7.5 Vdc, f = 870 MHz 10 8 Pin = 0.22 W 6 Pin = 0.11 W 4 2 0 0.5 0 1 1.5 2 2.5 3.5 3 4 4.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 18 90 16 80 14 70 Gps 12 60 10 50 8 40 6 30 D 4 2 0 0.01 20 VDD = 7.5 Vdc, IDQ = 100 mA 10 f = 870 MHz 0 0.7 0.1 Pout D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) Figure 7. Output Power versus Gate--Source Voltage at a Constant Input Power Pin, INPUT POWER (WATTS) Figure 8. Power Gain, Output Power and Drain Efficiency versus Input Power VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 7 W f MHz Zsource  Zload  870 0.54 + j1.35 1.31 + j1.93 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 7 350–470 MHz UHF BROADBAND REFERENCE CIRCUIT Table 8. 350–470 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Vdc, IDQ = 200 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 350 0.15 16.6 60.9 7.3 410 0.15 16.6 66.5 7.3 470 0.20 15.6 70.1 7.3 Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 470 CW VSWR Pin (W) > 65:1 at all Phase Angles 0.4 (3 dB Overdrive) Test Voltage, VDD Result 10.8 No Device Degradation AFT09MS007NT1 8 RF Device Data Freescale Semiconductor, Inc. 350–470 MHz UHF BROADBAND REFERENCE CIRCUIT J1 C1 C14 C19 C9 C2 L3 C13 C18 C12 L1 L7 C10 C4 C11 L4 C5 R1 L2 C17 L5 C16 L6 Q1 C8 C6 C7 Rev. 1 C3 C15 D58008 Figure 10. AFT09MS007NT1 UHF Broadband Reference Circuit Component Layout — 350–470 MHz Table 10. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 350–470 MHz Part Description Part Number Manufacturer C1, C10, C19 100 pF Chip Capacitors ATC600F101JT250XT ATC C2 10 pF Chip Capacitor ATC600F100JT250XT ATC C3 3.0 pF Chip Capacitor ATC600F3R0BT250XT ATC C4, C8 27 pF Chip Capacitors ATC600F270JT250XT ATC C5 5.1 pF Chip Capacitor ATC600F5R1BT250XT ATC C6, C7 30 pF Chip Capacitors ATC600F300JT250XT ATC C9 10 nF Chip Capacitor C1210C103J5GAC-TU Kemet C11 82 pF Chip Capacitor ATC600F820JT250XT ATC C12 240 pF Chip Capacitor ATC600F241JT250XT ATC C13 2.2 F Chip Capacitor C3225X7R1H225K250AB TDK C14 0.1 F Chip Capacitor GRM21BR71H104KA01B Murata C15 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata C16 47 pF Chip Capacitor ATC600F470JT250XT ATC C17 18 pF Chip Capacitor ATC600F180BT250XT ATC C18 7.5 pF Chip Capacitor ATC100A7R5JT150XT ATC J1 3--pin Header 22-28-8360 Molex L1 8.1 nH Inductor 0908SQ8N1 Coilcraft L2 2.55 nH, 3 Turn Inductor 0906-3JLC Coilcraft L3, L4, L5 21.5 nH Inductors 0908SQ22N Coilcraft L6 3.85 nH, 4 Turn Inductor 0906-4JLC Coilcraft L7 8.9 nH Inductor 0806SQ8N9 Coilcraft Q1 RF Power LDMOS Transistor AFT09MS007NT1 Freescale R1 62 , 1/10 W Chip Resistor RG2012N-620-B-T1 Susumu PCB Shengyi S1000-2, 0.020, r = 4.8 D58008 MTL AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 9 AFT09MS007NT1 10 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C1 Z2 C2 Z3 Z4 C4 Z6 C5 Z7 L2 Z8 Z9 C6 Z10 C7 Z11 C11 C8 Z12 Z13 C10 Z14 Z15 R1 Z16 Z17 Z18 Z19 L5 0.026  0.046 Microstrip 0.026  0.046 Microstrip 0.060  0.046 Microstrip 0.054  0.046 Microstrip 0.054  0.046 Microstrip 0.060  0.046 Microstrip 0.084  0.046 Microstrip 0.044  0.046 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Description 0.060  0.034 Microstrip Z1 Microstrip C16 Z20 C13 L6 Microstrip Description Microstrip Z20 0.121  0.300 Microstrip 0.031  0.300 Microstrip 0.070  0.146 Microstrip 0.070  0.146 Microstrip 0.160  0.170 Microstrip Z13 Z14 Z15 Z16 Z17 Z25 Z24 Z23 Z22 Z21 Z19 0.055  0.046 Microstrip Z18 0.235  0.046 Microstrip 0.037  0.046 Microstrip Z12 Z11 Z10 C17 Z22 C15 0.060  0.034 Microstrip 0.046  0.046 Microstrip 0.089  0.046 Microstrip 0.195  0.046 Microstrip 0.032  0.046 Microstrip 0.148  0.046 Microstrip 0.205  0.046 Microstrip 0.088  0.170 Microstrip Description Z21 C14 Figure 11. AFT09MS007NT1 UHF Broadband Reference Circuit Schematic — 350–470 MHz C3 Z5 C9 C12 Table 11. AFT09MS007NT1 UHF Broadband Reference Circuit Microstrips — 350–470 MHz L1 VBIAS L3 L4 L7 VSUPPLY Z23 C18 Z24 C19 Z25 RF OUTPUT TYPICAL CHARACTERISTICS — 350–470 MHz UHF BROADBAND REFERENCE CIRCUIT 19 18 80 D 70 17 60 16 Gps 15 14 12 320 340 360 400 380 420 460 440 8 7 Pout 13 50 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 90 VDD = 7.5 Vdc Pin = 0.20 W IDQ = 200 mA D, DRAIN EFFICIENCY (%) 20 6 5 500 480 f, FREQUENCY (MHz) Figure 12. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power f = 410 MHz 0.8 VDD = 7.5 Vdc, Pin = 0.1 W 12 10 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 14 VDD = 7.5 Vdc, Pin = 0.25 W 8 6 4 2 0 0 1 3 2 0.6 4 VDD = 7.5 Vdc Pin = 0.25 W 0.4 VDD = 7.5 Vdc Pin = 0.1 W 0.2 0 Detail A f = 410 MHz 0.4 0 0.8 1.2 1.6 2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 5 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 13. Output Power versus Gate--Source Voltage 80 f = 470 MHz D Gps, POWER GAIN (dB) 19 410 MHz 18 17 16 VDD = 7.5 Vdc IDQ = 200 mA 470 MHz 20 350 MHz 10 Pout 7.5 410 MHz 470 MHz 13 12 0.01 40 410 MHz 15 14 60 350 MHz D, DRAIN EFFICIENCY (%) 350 MHz 5 2.5 Gps 0 0.1 Pout, OUTPUT POWER (WATTS) 20 1 Pin, INPUT POWER (WATTS) Figure 14. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 11 350–470 MHz UHF BROADBAND REFERENCE CIRCUIT f = 470 MHz Zo = 10  Zsource f = 350 MHz f = 470 MHz f = 350 MHz Zload VDD = 7.5 Vdc, IDQ = 200 mA, Pout = 7.5 W f MHz Zsource  Zload  350 2.7 + j6.6 3.5 + j4.2 370 3.3 + j6.2 3.7 + j4.2 390 3.1 + j5.4 3.5 + j4.0 410 2.6 + j6.1 3.5 + j5.0 430 2.1 + j7.1 3.6 + j5.9 450 2.2 + j7.3 3.6 + j5.6 470 2.0 + j7.7 3.0 + j5.8 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 15. UHF Broadband Series Equivalent Source and Load Impedance — 350–470 MHz AFT09MS007NT1 12 RF Device Data Freescale Semiconductor, Inc. 450–520 MHz UHF BROADBAND REFERENCE CIRCUIT Table 12. 450–520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Volts, IDQ = 150 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 450 0.21 15.4 57.7 7.5 485 0.21 15.5 56.0 7.5 520 0.18 16.2 66.3 7.5 Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 520 CW VSWR Pin (W) > 65:1 at all Phase Angles 0.2 (3 dB Overdrive) Test Voltage, VDD Result 10.8 No Device Degradation AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 13 450–520 MHz UHF BROADBAND REFERENCE CIRCUIT C1 J1 C6 L3 L1 VGG C7 C8 C16 C15 C9 C10 VDD C5 L7 C2 L4 R1 C4 C14 Q1 C3 L5 C11 C12 C13 AFT09MS007N Rev. 2 L2 C17 L6 D49947 Figure 16. AFT09MS007NT1 UHF Broadband Reference Circuit Component Layout — 450–520 MHz Table 14. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 450–520 MHz Part Description Part Number Manufacturer C1, C16 100 pF Chip Capacitors ATC600F101JT250XT ATC C2 7.5 pF Chip Capacitor GQM2195C2E7R5BB12D Murata C3 5.6 pF Chip Capacitor ATC600F5R6BT250XT ATC C4 39 pF Chip Capacitor ATC600F390JT250XT ATC C5, C9 240 pF Chip Capacitors ATC600F241JT250XT ATC C6, C7 0.1 F Chip Capacitors GRM21BR71H104KA01B Murata C8 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata C10 2.2 F Chip Capacitor GRM31CR71H225KA88L Murata C11, 12 12 pF Chip Capacitors ATC600F120JT250XT ATC C13 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC C14 20 pF Chip Capacitor ATC600F200JT250XT ATC C15 2 pF Chip Capacitor ATC600F2R0BT250XT ATC C17 47 pF Chip Capacitor ATC600F470JT250XT ATC J1 3--pin Header 22-28-8360 Molex L1 2.55 nH Inductor 0906-3JLC Coilcraft L2 3.85 nH Inductor 0906-4JLC Coilcraft L3 22 nH Inductor 0908SQ22N Coilcraft L4, L5 17 nH Inductors 0908SQ17N Coilcraft L6 1.65 nH Inductor 0906-2JLC Coilcraft L7 8.1 nH Inductor 0908SQ8R1N Coilcraft R1 22 , 1/10 W Chip Resistor RR1220Q-220-D Susumu Q1 RF Power LDMOS Transistor AFT09MS007N Freescale PCB Shengyi S1000-2, 0.020, r = 4.8 D49947 MTL AFT09MS007NT1 14 RF Device Data Freescale Semiconductor, Inc. AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 15 RF INPUT Z1 C1 Z2 L1 Z3 Z5 Z6 C3 Z7 C4 Z8 Z9 C5 Z10 Z11 R1 Z12 Z13 C11 Z14 C17 C12 Z15 Z16 L5 C13 Z17 C9 L6 C8 Z18 C7 C14 Z19 Description 0.052  0.046 Microstrip 0.110  0.046 Microstrip 0.118  0.046 Microstrip 0.084  0.046 Microstrip 0.124  0.046 Microstrip 0.084  0.046 Microstrip 0.207  0.046 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.060  0.034 Microstrip Microstrip Z1 Microstrip Description Microstrip 0.055  0.170 Microstrip 0.055  0.170 Microstrip Z14 Z15 Z22 Z21 Z20 0.138  0.170 Microstrip Z13 Z18 Z17 Z16 Z19 0.070  0.146 Microstrip 0.031  0.300 Microstrip 0.121  0.300 Microstrip 0.070  0.146 Microstrip Z12 Z11 Z10 Z9 L7 Z20 0.060  0.034 Microstrip 0.046  0.046 Microstrip 0.089  0.046 Microstrip 0.195  0.046 Microstrip 0.032  0.046 Microstrip 0.279  0.049 Microstrip 0.075  0.049 Microstrip Description Figure 17. AFT09MS007NT1 UHF Broadband Reference Circuit Schematic — 450–520 MHz L2 C6 L3 C10 Table 15. AFT09MS007NT1 UHF Broadband Reference Circuit Microstrips — 450–520 MHz C2 Z4 VBIAS L4 VSUPPLY C15 Z21 C16 RF Z22 OUTPUT TYPICAL CHARACTERISTICS — 450–520 MHz UHF BROADBAND REFERENCE CIRCUIT 18 80 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 19 90 VDD = 7.5 Vdc Pin = 0.25 W IDQ = 150 mA 70 D 17 60 16 50 Gps 15 10 14 Pout, OUTPUT POWER (WATTS) 20 9 Pout 13 12 440 450 460 470 480 490 510 500 520 8 7 530 f, FREQUENCY (MHz) Figure 18. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power — 7.5 V 16 f = 485 MHz 8 VDD = 7.5 Vdc, Pin = 0.25 W 12 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 14 VDD = 7.5 Vdc, Pin = 0.1 W 10 8 6 Detail A 4 2 0 6 2 1 3 VDD = 7.5 Vdc Pin = 0.25 W 5 4 VDD = 7.5 Vdc Pin = 0.1 W 3 2 1 0 0 f = 485 MHz 7 0 1 2 3 4 VGS, GATE--SOURCE VOLTAGE (VOLTS) 4 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 19. Output Power versus Gate--Source Voltage 19 D 17 520 MHz 485 MHz 16 485 MHz 450 MHz 60 40 VDD = 7.5 Vdc IDQ = 150 mA 20 12 15 14 Pout 520 MHz 450 MHz 8 485 MHz 13 12 0.03 450 MHz 0.1 4 Gps 0 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 18 D, DRAIN EFFICIENCY (%) 80 f = 520 MHz 1 Pin, INPUT POWER (WATTS) Figure 20. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency AFT09MS007NT1 16 RF Device Data Freescale Semiconductor, Inc. 450–520 MHz UHF BROADBAND REFERENCE CIRCUIT f = 530 MHz Zo = 10  Zsource f = 450 MHz f = 530 MHz Zload f = 450 MHz VDD = 7.5 Vdc, IDQ = 150 mA, Pout = 7.5 W f MHz Zsource  Zload  450 0.45 + j2.46 1.56 + j1.05 460 0.40 + j2.37 1.52 + j1.24 470 0.40 + j2.97 1.46 + j1.51 480 0.38 + j3.56 1.39 + j1.71 490 0.41 + j4.16 1.35 + j2.06 500 0.51 + j4.79 1.34 + j2.06 510 0.70 + j5.54 1.37 + j2.30 520 0.93 + j6.44 1.40 + j 2.50 530 1.14 + j7.56 1.42 + j2.62 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 21. UHF Broadband Series Equivalent Source and Load Impedance — 450–520 MHz AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 17 760–860 MHz BROADBAND REFERENCE CIRCUIT Table 16. 760–860 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Volts, IDQ = 150 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 760 0.20 15.3 48.1 7.0 810 0.16 16.3 54.1 7.0 860 0.21 15.1 59.5 7.0 Table 17. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 810 CW VSWR Pin (W) > 65:1 at all Phase Angles 0.5 (3 dB Overdrive) Test Voltage, VDD Result 9.0 No Device Degradation AFT09MS007NT1 18 RF Device Data Freescale Semiconductor, Inc. 760–860 MHz BROADBAND REFERENCE CIRCUIT VGG C1 C8 GND VDD C16 J1 C9 B1 B2 AFT09MS007N Rev. 1 C2 C4 R1 C13 L1 C6 C11 Q1 C3 C5 C7 C15 C10 C12 C14 D55295 Figure 22. AFT09MS007NR1 Broadband Reference Circuit Component Layout — 760–860 MHz Table 18. AFT09MS007NR1 Broadband Reference Circuit Component Designations and Values — 760–860 MHz Part Description Part Number Manufacturer B1, B2 RF Beads 2743019447 Fair-Rite C1 10 pF Chip Capacitor GQM2195C2E100FB15 Murata C2 3.9 pF Chip Capacitor GQM2195C2E3R9BB15 Murata C3 7.5 pF Chip Capacitor GQM2195C2E7R5BB15 Murata C4, C13, C16 100 pF Chip Capacitors GQM2195C2E101GB15 Murata C5 8.2 pF Chip Capacitor GQM2195C2E8R2BB15 Murata C6, C7 20 pF Chip Capacitors GQM2195C2E200GB15 Murata C8 1 F Chip Capacitor GRM31MR71H105KA88L Murata C9 10 F Chip Capacitor GRM31CR61H106KA12L Murata C10, C11 12 pF Chip Capacitors GQM2195C2E120FB15 Murata C12 5.1 pF Chip Capacitor GQM2195C2E5R1BB15 Murata C14 4.7 pF Chip Capacitor GQM2195C2E4R7BB15 Murata C15 3.9 pF Chip Capacitor GQM2195C2E3R9BB15 Murata J1 3--pin Header 22-28-8360 Molex L1 22 nH Inductor 0908SQ-22NJL Coilcraft Q1 RF Power LDMOS Transistor AFT09MS007N Freescale R1 200  Chip Resistor CRCW0805200RJNEA Vishay PCB Shengyi S1000--2, 0.020, r = 4.8 D55295 MTL AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 19 AFT09MS007NT1 20 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C2 Z3 Z5 C5 Z6 C7 C6 Z7 C4 Z8 Z9 R1 Z11 Z12 Z10 L1 C10 Z13 C13 B2 C11 Z14 C9 C12 Z15 VSUPPLY 0.150  0.050 Microstrip 0.120  0.034 Microstrip 0.460  0.034 Microstrip 0.073  0.034 Microstrip 0.120  0.250 Microstrip 0.128  0.250 Microstrip 0.145  0.250 Microstrip Z1 Z3 Z4 Z5 Z6 Z7 Description Z2 Microstrip Z16 C14 Z17 Z14 Z13 Z12 Z11 Z10 Z9 Z8 Microstrip 0.077  0.180 Microstrip 0.068  0.180 Microstrip 0.163  0.180 Microstrip 0.027  0.180 Microstrip 0.110  0.034 Microstrip 0.066  0.034 Microstrip 0.027  0.250 Microstrip Description 0.160  0.034 Microstrip 0.360  0.034 Microstrip 0.105  0.034 Microstrip 0.150  0.050 Microstrip Z17 Z18 Z19 * Line length includes microstrip bends. 0.115  0.180 Microstrip Z16 C16 Z15 Microstrip C15 Z18 Description Figure 23. AFT09MS007NT1 Broadband Reference Circuit Schematic — 760–860 MHz C3 Z4 C8 B1 Table 19. AFT09MS007NT1 Broadband Reference Circuit Microstrips — 760–860 MHz C1 Z2 VBIAS Z19 RF OUTPUT 19 65 D 60 17 55 16 50 15 45 Gps 14 10 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 18 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 760–860 MHz BROADBAND REFERENCE CIRCUIT 9 13 12 8 Pout 11 10 740 VDD = 7.5 Vdc, Pin = 0.25 W, IDQ = 150 mA 760 780 820 800 840 7 6 880 860 f, FREQUENCY (MHz) Figure 24. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power — 7.5 V f = 810 MHz 7 12 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 14 VDD = 7.5 Vdc, Pin = 0.25 W 10 VDD = 7.5 Vdc, Pin = 0.1 W Detail A 8 6 4 2 0 5 4 2 1 3 VDD = 7.5 Vdc Pin = 0.25 W 3 2 VDD = 7.5 Vdc Pin = 0.1 W 1 0 0 f = 810 MHz 6 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 4 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 25. Output Power versus Gate--Source Voltage 21 f = 860 MHz Gps, POWER GAIN (dB) 19 760 MHz 18 17 810 MHz 16 60 45 810 MHz VDD = 7.5 Vdc IDQ = 150 mA 30 15 860 MHz 12 Pout 15 9 760 MHz 14 860 MHz 810 MHz 13 6 Gps 3 760 MHz 12 0 0.1 0 0.2 0.3 0.4 0.5 Pout, OUTPUT POWER (WATTS) 20 D, DRAIN EFFICIENCY (%) 75 D 0.6 Pin, INPUT POWER (WATTS) Figure 26. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 21 760–860 MHz BROADBAND REFERENCE CIRCUIT Zo = 2  f = 860 MHz Zsource f = 760 MHz f = 860 MHz Zload f = 760 MHz VDD = 7.5 Vdc, IDQ = 150 mA, Pout = 7 W f MHz Zsource  760 0.77 + j0.62 1.65 – j0.04 770 0.81 + j0.71 1.70 + j0.10 780 0.81 + j0.79 1.72 + j0.24 790 0.82 + j0.85 1.74 + j0.36 800 0.84 + j0.92 1.77 + j0.49 810 0.85 + j0.98 1.81 + j0.61 820 0.88 + j1.02 1.84 + j0.69 830 0.89 + j1.07 1.87 + 0.79 840 0.91 + 1.13 1.91 + j0.90 850 0.91 + j1.19 1.93 + j0.99 860 0.94 + j1.23 1.99 + j1.08 Zload  Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 27. Broadband Series Equivalent Source and Load Impedance — 760–860 MHz AFT09MS007NT1 22 RF Device Data Freescale Semiconductor, Inc. 0.28 7.11 0.165 4.91 0.089 2.26 Solder Pad with Thermal Via Structure 0.085 2.16 0.155 3.94 Inches (mm) Figure 28. PCB Pad Layout for PLD--1.5W A9M07 N B YYWW Figure 29. Product Marking AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 23 PACKAGE DIMENSIONS AFT09MS007NT1 24 RF Device Data Freescale Semiconductor, Inc. AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 25 AFT09MS007NT1 26 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 June 2013  Initial Release of Data Sheet 1 Apr. 2014  Wideband Performance tables 8, 12, 16: updated to include Pin for all reference circuits, pp. 1, 8, 13, 18  Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect actual reel size, p. 1  Maximum Ratings table: changed Total Device Dissipation value from 182 to 114 W to reflect performance at 150C, p. 2  Fig. 4, MTTF versus Junction Temperature – CW: MTTF end temperature on graph changed to match maximum operating junction temperature, p. 4  Table 6, Test Circuit Component Designations and Values: updated PCB description to reflect most current board specifications from Rogers, p. 5  Added 350–470 MHz UHF Broadband Reference Circuit as follows: -- Wideband Performance table, p. 1 -- Table 8, UHF Broadband Performance, p. 8 -- Table 9, Load Mismatch/Ruggedness, p. 8 -- Fig. 10, UHF Broadband Reference Circuit Component Layout, p. 9 -- Table 10, UHF Broadband Reference Circuit Component Designations and Values, p. 9 -- Fig. 11, UHF Broadband Reference Circuit Schematic, p. 10 -- Table 11, UHF Broadband Reference Circuit Microstrips, p. 10 -- Fig. 12, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power, p. 11 -- Fig. 13, Output Power versus Gate--Source Voltage, p. 11 -- Fig. 14, Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency, p. 11 -- Fig. 15, VHF Broadband Series Equivalent Source and Load Impedance, p. 12  Table 12. Load Mismatch/Ruggedness table: changed Test Voltage from 9.0 to 10.8 Vdc to reflect true capability of the circuit, p. 13 AFT09MS007NT1 RF Device Data Freescale Semiconductor, Inc. 27 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2013–2014 Freescale Semiconductor, Inc. AFT09MS007NT1 Document Number: AFT09MS007N Rev. 1, 4/2014 28 RF Device Data Freescale Semiconductor, Inc.