AFT18S230-12NR3

Document Number: AFT18S230--12N Rev. 0, 7/2015 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET AFT18S230--12NR3 This 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. 1800 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 1805 MHz 17.1 33.3 7.1 –33.6 –14 1840 MHz 17.5 33.3 7.1 –33.6 –16 1880 MHz 17.6 33.8 6.9 –33.7 –11 1805–1880 MHz, 50 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR Features  High thermal conductivity packaging technology for reduced thermal resistance  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems  Optimized for Doherty applications OM--780--2L2L PLASTIC 4 VBW (1) RFin/VGS 1 3 RFout/VDS 2 VBW (1) (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections 1. Device cannot operate with the VDD current supplied through pin 2 and pin 4.  Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT18S230--12NR3 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C TC –40 to +150 C TJ –40 to +225 C Symbol Value (2,3) Unit RJC 0.27 C/W Case Operating Temperature Range Operating Junction Temperature Range (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 78C, 50 W CW, 28 Vdc, IDQ = 1400 mA, 1842.5 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 291 Adc) VGS(th) 1.0 2.0 2.5 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGS(Q) 2.3 2.8 3.3 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.9 Adc) VDS(on) 0.1 0.24 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Gps 16.3 17.6 19.3 dB D 29.0 33.8 — % PAR 6.0 6.9 — dB ACPR — –33.7 –30.0 dBc IRL — –11 –6 dB Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Part internally matched both on input and output. (continued) AFT18S230--12NR3 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 1840 MHz VSWR 10:1 at 32 Vdc, 309 W CW Output Power (3 dB Input Overdrive from 204 W CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1805–1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 204 — W  — –17 —  VBWres — 70 — MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 50 W Avg. GF — 0.4 — dB Gain Variation over Temperature (–30C to +85C) G — 0.009 — dB/C P1dB — 0.006 — dB/C AM/PM (Maximum value measured at the P3dB compression point across the 1805–1880 MHz bandwidth) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–30C to +85C) Table 6. Ordering Information Device AFT18S230--12NR3 Tape and Reel Information R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel Package OM--780--2L2L AFT18S230--12NR3 RF Device Data Freescale Semiconductor, Inc. 3 VDD VGG C15 AFT18S230--12N Rev. C3 C5 R1 C3 C7 C17 C11 C9 C6 C12 C13 C2 R2 D51480 VGG CUT OUT AREA C1 C10 C14 C18 C4 C8 C16 VDD Figure 2. AFT18S230--12NR3 Test Circuit Component Layout Table 7. AFT18S230--12NR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4, C9 12 pF Chip Capacitors ATC100B120FW1500XT ATC C5, C6, C7, C8, C17, C18 10 F Chip Capacitors C5750X7S2A106M230KB TDK C10 6.8 pF Chip Capacitor ATC100B6R8BW1500XT ATC C11 1.1 pF Chip Capacitor ATC100B1R1BW1500XT ATC C12 1.0 pF Chip Capacitor ATC100B1R0BW1500XT ATC C13 0.4 pF Chip Capacitor ATC100B0R4BW1500XT ATC C14 0.9 pF Chip Capacitor ATC100B0R9BW1500XT ATC C15, C16 470 F, 50 V Electrolytic Capacitors 477CKS050M Illinois Capacitor R1, R2 4.02 , 1/4 W Chip Resistors CRCW12064R02FKEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D51480 MTL AFT18S230--12NR3 4 RF Device Data Freescale Semiconductor, Inc. 17.8 34 33 D 17.6 32 Gps 17.4 17.2 PARC 17 16.8 16.4 1760 1780 1800 –6 –33 –9 –33.5 –34 IRL 16.6 –32.5 –34.5 ACPR 1820 1840 1860 f, FREQUENCY (MHz) 1880 1900 –12 –15 –18 –21 –35 1920 –2.6 –2.8 –3 –3.2 –3.4 PARC (dB) 18 35 IRL, INPUT RETURN LOSS (dB) 18.2 Gps, POWER GAIN (dB) 36 VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF ACPR (dBc) 18.4 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS –3.6 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg. 0 VDD = 28 Vdc, Pout = 83 W (PEP) IDQ = 1400 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz –15 IM3--U –30 IM5--U –45 IM5--L IM7--L IM7--U –60 –75 IM3--L 1 100 10 200 TWO--TONE SPACING (MHz) 18 0 17.8 17.6 17.4 17.2 17 VDD = 28 Vdc, IDQ = 1400 mA f = 1840 MHz, Single--Carrier W--CDMA Gps –1 –2 –3 –4 –5 10 –1 dB = 27.5 W 60 –20 50 –25 40 –2 dB = 39.3 W 30 –3 dB = 53.4 W D 20 ACPR 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 25 40 55 Pout, OUTPUT POWER (WATTS) PARC 70 10 0 85 –30 –35 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 18.2 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing –40 –45 –50 Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT18S230--12NR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 18 50 –10 40 1805 MHz 16 1840 MHz ACPR 1880 MHz 1805 MHz 1840 MHz 14 1880 MHz 12 10 0 D 20 1880 MHz Gps 1840 MHz 1805 MHz 10 0 300 10 100 Pout, OUTPUT POWER (WATTS) AVG. 1 30 –20 –30 –40 ACPR (dBc) Gps, POWER GAIN (dB) 20 60 D, DRAIN EFFICIENCY (%) 22 –50 –60 Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 22 5 20 0 Gain –5 16 --10 14 --15 IRL 12 10 1500 IRL (dB) GAIN (dB) 18 1600 1700 VDD = 28 Vdc Pin = 0 dBm IDQ = 1400 mA 1800 1900 2000 f, FREQUENCY (MHz) 2100 --20 2200 --25 2300 Figure 7. Broadband Frequency Response AFT18S230--12NR3 6 RF Device Data Freescale Semiconductor, Inc. Table 8. Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQA = 1400 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 1.17 – j4.25 1.10 + j3.92 1840 1.69 – j4.78 1.38 + j4.25 1880 3.16 – j5.35 2.16 + j4.57 (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.10 – j3.55 16.8 54.0 250 53.4 –12 1.06 – j3.65 16.7 54.0 253 53.5 –13 1.09 – j3.92 16.5 54.0 250 52.4 –13 Zload () Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.17 – j4.25 1.07 + j4.03 1.10 – j3.61 14.7 54.7 298 55.8 –18 1840 1.69 – j4.78 1.39 + j4.39 1.13 – j3.80 14.6 54.8 299 56.1 –18 1880 3.16 – j5.35 2.25 + j4.78 1.16 – j4.07 14.3 54.7 296 54.3 –18 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 1400 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.17 – j4.25 1.12 + j4.11 1.95 – j2.42 19.5 52.3 171 64.8 –19 1840 1.69 – j4.78 1.48 + j4.43 1.88 – j2.54 19.3 52.2 168 64.6 –20 1880 3.16 – j5.35 2.41 + j4.75 1.77 – j2.67 19.1 52.2 164 64.1 –20 Max Drain Efficiency P3dB (2) Gain (dB) (dBm) (W) D (%) AM/PM () 1.80 – j2.54 17.3 53.2 211 67.0 –26 1.42 + j4.52 1.69 – j2.54 17.3 52.9 197 66.5 –28 2.40 + j4.89 1.73 – j2.72 17.1 52.9 193 65.4 –26 f (MHz) Zsource () Zin () 1805 1.17 – j4.25 1.08 + j4.14 1840 1.69 – j4.78 1880 3.16 – j5.35 Zload () (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18S230--12NR3 RF Device Data Freescale Semiconductor, Inc. 7 P1dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz –1.5 50 50.5 51 –2 51.5 –2.5 E 52 –3 IMAGINARY () IMAGINARY () –2 –1.5 50 52.5 –3.5 P –4 53 53.5 54 –2.5 64 62 –3 60 –3.5 58 P –4 –4.5 1 1.5 2 REAL () 3 2.5 –5 0.5 3.5 Figure 8. P1dB Load Pull Output Power Contours (dBm) –1.5 48 1 1.5 52 50 2 REAL () 3 2.5 3.5 Figure 9. P1dB Load Pull Efficiency Contours (%) –1.5 20.5 20 –2 IMAGINARY () E 19 –3 18.5 P 18 –4 –24 –2 19.5 –2.5 –3.5 56 54 –4.5 –5 0.5 IMAGINARY () E –22 –26 –2.5 –20 E –18 –3 –16 –3.5 P –14 –4 17.5 –4.5 –5 0.5 1 1.5 2 –4.5 17 16.5 2.5 3.5 3 –12 –5 0.5 1 1.5 2 2.5 3 3.5 REAL () REAL () Figure 10. P1dB Load Pull Gain Contours (dB) Figure 11. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18S230--12NR3 8 RF Device Data Freescale Semiconductor, Inc. P3dB – TYPICAL LOAD PULL CONTOURS — 1840 MHz –1.5 51 51.5 –2 52 –2.5 E 52.5 IMAGINARY () IMAGINARY () –2 –1.5 51 –3 54 –3.5 54.5 –4 53 53.5 P E 66 64 –3 P 58 56 –4.5 53.5 –5 0.5 1 1.5 2 REAL () 3 2.5 –5 0.5 3.5 Figure 12. P3dB Load Pull Output Power Contours (dBm) 60 62 –3.5 –4 –4.5 50 1 1.5 54 52 2 REAL () 3 2.5 3.5 Figure 13. P3dB Load Pull Efficiency Contours (%) –1.5 –1.5 18 –2 17.5 –2.5 E 17 –3 16.5 –3.5 16 P –4 14 –5 0.5 1 1.5 2 2.5 –2.5 3.5 3 –24 E –22 –3 –20 –3.5 P –18 –16 –4.5 15 14.5 –26 –28 –4 15.5 –4.5 –30 –32 –2 IMAGINARY () IMAGINARY () –2.5 –5 0.5 1 1.5 2 2.5 3 3.5 REAL () REAL () Figure 14. P3dB Load Pull Gain Contours (dB) Figure 15. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18S230--12NR3 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS AFT18S230--12NR3 10 RF Device Data Freescale Semiconductor, Inc. AFT18S230--12NR3 RF Device Data Freescale Semiconductor, Inc. 11 AFT18S230--12NR3 12 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers  AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 July 2015 Description  Initial Release of Data Sheet AFT18S230--12NR3 RF Device Data Freescale Semiconductor, Inc. 13 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. AFT18S230--12NR3 Document Number: AFT18S230--12N Rev. 0, 7/2015 14 RF Device Data Freescale Semiconductor, Inc.