BA891

BA891 Band-switching diode Rev. 04 — 8 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification Band-switching diode FEATURES • Ultra small plastic SMD package • Low diode capacitance: max. 1.05 pF • Low diode forward resistance: max. 0.7 Ω • Small inductance. APPLICATIONS • Low loss band-switching in VHF television tuners • Surface mount band-switching circuits. DESCRIPTION The BA891 is a planar high performance band-switching diode in the ultra small SOD523 SMD plastic package. MARKING TYPE NUMBER BA891 MARKING CODE 7 handbook, halfpage BA891 PINNING PIN 1 2 DESCRIPTION cathode anode The marking band indicates the cathode. Fig.1 Simplified outline (SOD523) and symbol.  1 2 Top view MAM405 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C CONDITIONS − − − −65 −65 MIN. MAX. 35 100 715 +150 +150 V mA mW °C °C UNIT Rev. 04 - 8 January 2008 2 of 6 NXP Semiconductors Product specification Band-switching diode THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 85 BA891 UNIT K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance VR = 30 V f = 1 MHz; note 1; see Fig.2 VR = 1 V VR = 3 V rD diode forward resistance f = 100 MHz; note 1; see Fig.3 IF = 3 mA IF = 10 mA LS Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. series inductance 0.42 0.28 0.6 0.7 0.5 − Ω Ω nH 0.8 0.65 1.05 0.9 pF pF CONDITIONS IF = 10 mA − − TYP. 1 20 MAX. V nA UNIT handbook, halfpage 1 MGL479 Cd (pF) handbook, halfpage 10 MGL478 0.8 rD (Ω) 0.6 1 0.4 0.2 0 0 10 20 VR (V) 30 10−1 10−1 1 IF (mA) 10 f = 1 MHz; Tj = 25 °C. f = 100 MHz; Tj = 25 °C. Fig.2 Diode capacitance as a function of reverse voltage; typical values. Fig.3 Diode forward resistance as a function of forward current; typical values. Rev. 04 - 8 January 2008 3 of 6 NXP Semiconductors Product specification Band-switching diode PACKAGE OUTLINE Plastic surface-mounted package; 2 leads BA891 SOD523 A c HE vMA D A 0 0.5 scale 1 mm 1 E bp 2 DIMENSIONS (mm are the original dimensions) UNIT mm A 0.65 0.58 bp 0.34 0.26 c 0.17 0.11 D 1.25 1.15 E 0.85 0.75 HE 1.65 1.55 v 0.1 (1) Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 Rev. 04 - 8 January 2008 4 of 6 NXP Semiconductors BA891 Band-switching diode Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 - 8 January 2008 5 of 6 NXP Semiconductors BA891 Band-switching diode Revision history Revision history Document ID BA891_N_4 Modifications: BA891_3 (9397 750 09281) BA891_2 (9397 750 04308) BA891_1 (9397 750 04193) Release date 20080108 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BA891_3 BA891_2 BA891_1 - • Package outline on page 4 changed 20020125 19980831 19980818 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 January 2008 Document identifier: BA891_N_4