BGA7127,118

BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 3 — 3 December 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior performance up to 2700 MHz. Its power saving features include simple quiescent current adjustment, which allows class-AB operation and logic-level shutdown control to reduce the supply current to 4 μA. 1.2 Features and benefits „ „ „ „ „ „ „ 400 MHz to 2700 MHz frequency operating range 12 dB small signal gain at 2 GHz 28 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical performance 5 V single supply operation All pins ESD protected 1.3 Applications „ Broadband CPE/MoCA „ WLAN/ISM/RFID „ Wireless infrastructure (base station, repeater, backhaul systems) „ Industrial applications „ E-metering „ Satellite Master Antenna TV (SMATV) 1.4 Quick reference data Table 1. Quick reference data Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 180 mA; Tcase = 25 °C; unless otherwise specified. Symbol Parameter Conditions [1] f frequency Gp power gain f = 2140 MHz PL(1dB) output power at 1 dB gain compression f = 2140 MHz IP3O output third-order intercept point f = 2140 MHz [1] Operation outside this range is possible but not guaranteed. [2] PL = 17 dBm per tone; spacing = 1 MHz. [2] Min Typ Max Unit 400 - 2700 MHz 10.5 12.0 13.5 dB 26.5 28.0 - dBm 39.0 42.0 - dBm BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 2. Pinning information 2.1 Pinning terminal 1 index area n.c. 1 VCC(RF) 2 8 ICQ_ADJ 7 RF_IN 6 SHDN 5 VCC(BIAS) BGA7127 VCC(RF) 3 n.c. 4 GND PAD 001aam036 Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description n.c. 1, 4 not connected VCC(RF) 2, 3 RF output for the power amplifier and DC supply input for the RF transistor collector [1] VCC(BIAS) 5 bias supply voltage [2] SHDN 6 shutdown control function enabled / disabled RF_IN 7 RF input for the power amplifier [1] ICQ_ADJ 8 quiescent collector current adjustment by an external resistor GND GND pad RF ground and DC ground [3] [1] This pin is DC-coupled and requires an external DC-blocking capacitor. [2] RF decoupled. [3] The center metal base of the SOT908-1 also functions as heatsink for the power amplifier. 3. Ordering information Table 3. Ordering information Type number Package BGA7127 BGA7127 Product data sheet Name Description Version HVSON8 plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 × 3 × 0.85 mm SOT908-1 All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 2 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 4. Functional diagram VCC SHDN 6 INPUT MATCH VCC(BIAS) ICQ_ADJ 5 8 BIAS ENABLE BANDGAP R2 V/I CONVERTER R1 2, 3 VCC(RF) RF_IN 7 RF_OUT OUTPUT MATCH GND 014aab047 Fig 2. Functional diagram 5. Shutdown control Table 4. Mode Shutdown control settings Mode description Function description SHDN Vctrl(sd) (V) Ictrl(sd) (μA) Min Max Min Max Idle medium power MMIC fully off; minimal supply current shutdown control enabled 0 0 0.7 - 2 TX medium power MMIC transmit mode shutdown control disabled 1 2.5 VCC(BIAS) - 3 BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 3 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 6. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit RF supply voltage [1] - 6.0 V VCC(BIAS) bias supply voltage [1] - 6.0 V ICC supply current [1][2] - 325 mA Vctrl(sd) shutdown control voltage [3] 0.0 VCC(BIAS) V Pi(RF) RF input power [4] - 25 dBm VCC(RF) Parameter Conditions f = 2140 MHz; switched Tcase case temperature −40 +85 °C Tj junction temperature - 150 °C VESD electrostatic discharge voltage Human Body Model (HBM); According JEDEC standard 22-A114E - 2000 V Charged Device Model (CDM); According JEDEC standard 22-C101B - 500 V [1] See Figure 3 for safe operating area. [2] The supply current is adjustable. See Section 8.1 “Supply current adjustment” and Section 12 “Application information”. [3] If Vctrl(sd) exceeds VCC(BIAS), the internal ESD circuit can be damaged. The recommended preventive measure is to limit the Ictrl(sd) to 20 mA. If the SHDN function is not used, the SHDN pin should be connected to VCC(BIAS). [4] Withstands switching between zero and maximum Pi(RF). 001aal536 350 ICC (mA) 300 250 200 150 100 2 3 4 5 6 7 VCC(RF) (V) Exceeding the safe operating area limits may cause serious damage to the product. The impact on ICC due to the spread of the external ICQ resistor (R2) should be taken into account. The product-spread on ICC should be taken into account (See Section 8 “Static characteristics”). Fig 3. BGA7127 Product data sheet BGA7127 DC safe operating area All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 4 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 7. Thermal characteristics Table 6. Symbol Rth(j-mb) [1] Thermal characteristics Parameter Conditions Typ Max Unit thermal resistance from junction to mounting base Tcase = 85 °C; VCC = 5 V; ICC = 180 mA [1] 28 - K/W Defined as thermal resistance from junction to GND pad. 8. Static characteristics Table 7. Static characteristics Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values at VCC = 5.0 V; Tcase = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Max Unit 100 - 250 mA R1 = 1 Ω; R2 = 909 Ω, E96 [2] 160 180 200 mA R1 = 1.8 Ω; R2 = 909 Ω, E96 [2] 160 180 200 mA - 4 6 μA supply current ICC Typ [1] during shutdown; pin SHDN = LOW (shutdown enabled) [1] The supply current is adjustable. See Section 8.1 “Supply current adjustment” and Section 12 “Application information”. [2] See Section 12 “Application information”. 8.1 Supply current adjustment The supply current can be adjusted by changing the value of external ICQ resistor (R2). 001aal537 250 ICC (mA) 200 150 100 650 850 1050 1250 1450 1650 R2 (Ω) R1 = 1 Ω. Fig 4. BGA7127 Product data sheet Supply current as a function of the value of R2 at a supply voltage of 5 V. All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 5 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 9. Dynamic characteristics Table 8. Dynamic characteristics Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 180 mA; Tcase = 25 °C; see Section 12 “Application information”; unless otherwise specified. Symbol Parameter f frequency Gp power gain PL(1dB) Conditions output power at 1 dB gain compression Min Typ [1] 400 f = 940 MHz [2] - f = 1960 MHz [2] f = 2140 MHz [2] f = 2445 MHz [2] NF output third-order intercept point noise figure RLout input return loss output return loss MHz - dB - 13.0 - dB 10.5 12.0 13.5 dB 10.5 - dB 27.5 - dBm f = 1960 MHz - 28.5 - dBm f = 2140 MHz 26.5 28.0 - dBm - 27.5 - dBm f = 940 MHz [3] - 41.5 - dBm f = 1960 MHz [3] - 42.5 - dBm f = 2140 MHz [3] 39.0 42.0 - dBm f = 2445 MHz [3] - 41.5 - dBm f = 940 MHz - 3.1 - dB f = 1960 MHz - 4.5 - dB f = 2140 MHz - 4.6 - dB - 4.7 - dB f = 940 MHz [2] - −25 - dB f = 1960 MHz [2] - −9 - dB f = 2140 MHz [2] - −9 - dB f = 2445 MHz [2] - −11 - dB f = 940 MHz [2] - −12 - dB f = 1960 MHz [2] - −14 - dB f = 2140 MHz [2] - −10 - dB f = 2445 MHz [2] - −17 - dB Operation outside this range is possible but not guaranteed. [2] Defined at Pi = −40 dBm; small signal conditions. [3] PL = 17 dBm; tone spacing = 1 MHz. Product data sheet 2700 20.0 - [1] BGA7127 - - f = 2445 MHz RLin Unit f = 940 MHz f = 2445 MHz IP3O Max All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 6 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 9.1 Scattering parameters Table 9. Scattering parameters, MMIC only VCC = 5 V; ICC = 180 mA; Tcase = 25 °C. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 400 0.92 178 8.64 91 0.01 45 0.75 −173 500 0.91 176 6.95 88 0.01 49 0.76 −175 600 0.91 174 5.88 86 0.01 51 0.75 −176 700 0.91 172 5.05 83 0.02 53 0.75 −178 800 0.91 170 4.47 81 0.02 55 0.74 −180 900 0.91 167 4.01 79 0.02 55 0.74 179 1000 0.90 165 3.64 76 0.02 54 0.75 177 1100 0.90 163 3.30 74 0.02 52 0.76 175 1200 0.90 161 3.0 71 0.02 51 0.75 173 1300 0.91 159 2.75 69 0.03 50 0.76 172 1400 0.91 156 2.53 67 0.03 51 0.76 171 1500 0.92 155 2.33 65 0.03 52 0.77 170 1600 0.92 153 2.16 64 0.03 52 0.77 169 1700 0.92 152 2.01 62 0.03 51 0.78 168 1800 0.92 152 1.86 61 0.03 48 0.78 168 1900 0.93 151 1.75 60 0.03 49 0.79 168 2000 0.93 152 1.64 60 0.03 51 0.80 168 2100 0.93 151 1.56 59 0.04 52 0.80 169 2200 0.93 151 1.48 58 0.04 52 0.80 169 2300 0.92 151 1.43 57 0.04 52 0.80 170 2400 0.92 151 1.38 57 0.04 52 0.79 171 2500 0.90 152 1.33 57 0.04 51 0.80 172 2600 0.90 152 1.29 56 0.04 50 0.79 173 2700 0.89 152 1.27 55 0.05 50 0.78 173 10. Reliability information Table 10. Reliability Life test Conditions HTOL Intrinsic failure rate according to JESD85; confidence level 60 %; Tj = 55 °C; activation energy = 0.7 eV; acceleration factor determined according to the Arrhenius equation. 4 11. Moisture sensitivity Table 11. BGA7127 Product data sheet Moisture sensitivity level Test methodology Class JESD-22-A113 1 All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 7 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12. Application information 12.1 920 MHz to 960 MHz at 5 V; 180 mA C6 R1 VCC C5 C8 C7 L2 VCC(BIAS) 50 Ω MSL1 C1 MSL2 MSL3 VCC(RF) RF_IN C2 MSL4 L1 MSL5 MSL6 C4 50 Ω MSL8 C3 BGA7127 ICQ_ADJ MSL7 SHDN R2 001aam037 enable See Table 12 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 5. 920 MHz to 960 MHz application schematic 001aam170 32 PL(1dB) (dBm) 001aam171 26 Gp (dB) 30 24 (1) (2) (3) 28 22 26 20 24 18 22 0.92 0.93 0.94 0.95 (1) (2) (3) 16 0.92 0.96 0.93 f (GHz) (1) Tcase = 25 °C (2) Tcase = 85 °C (2) Tcase = 85 °C (3) Tcase = −40 °C (3) Tcase = −40 °C Output power at 1 dB gain compression as a function of frequency BGA7127 Product data sheet 0.95 0.96 f (GHz) (1) Tcase = 25 °C Fig 6. 0.94 Fig 7. Power gain as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 8 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam172 0 RLin, RLout, ISL (dB) −5 001aam173 46 IP3O (dBm) (1) (2) (3) 44 (2) −10 42 −15 −20 40 (3) −25 38 −30 (1) −35 0.92 0.93 0.94 0.95 36 0.92 0.96 0.93 0.94 0.95 f (GHz) Tcase = 25 °C. PL = 17 dBm; tone spacing = 1 MHz. (1) RLin (1) Tcase = 25 °C (2) RLout (2) Tcase = 85 °C (3) ISL (3) Tcase = −40 °C Fig 8. 0.96 f (GHz) Input return loss, output return loss and isolation as a function of frequency 001aam523 0 ACPR (dBc) −20 Fig 9. Output third-order intercept point as a function of frequency 001aam524 0 ACPR (dBc) −10 −20 −30 −40 −40 (1) (2) (3) (4) −60 (1) (2) (3) (4) −50 −60 −80 0 5 10 15 20 25 PL(AV) (dBm) 2-carrier W-CDMA; each carrier according to 3GPP test model 1; 64 DPCH; PAR for composite signal = 7.5 dB; 5 MHz carrier spacing. −70 0 5 10 15 20 25 PL(AV) (dBm) 2-carrier W-CDMA; each carrier according to 3GPP test model 1; 64 DPCH; PAR for composite signal = 9 dB; 10 MHz carrier spacing. (1) f = 920 MHz; ACPR measured at f ± 5 MHz (1) f = 920 MHz; ACPR measured at f ± 5 MHz (2) f = 960 MHz; ACPR measured at f ± 5 MHz (2) f = 960 MHz; ACPR measured at f ± 5 MHz (3) f = 920 MHz; ACPR measured at f ± 10 MHz (3) f = 920 MHz; ACPR measured at f ± 10 MHz (4) f = 960 MHz; ACPR measured at f ± 10 MHz (4) f = 960 MHz; ACPR measured at f ± 10 MHz Fig 10. Adjacent channel power ratio as a function of average output power BGA7127 Product data sheet Fig 11. Adjacent channel power ratio as a function of average output power All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 9 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam525 43 IP3o (dBm) 41 (1) (2) 39 37 10 14 18 22 PL (dBm) per tone f = 940 MHz; tone spacing = 1 MHz. (1) Upper sideband (2) Lower sideband Fig 12. Output third-order intercept point as a function of output power per tone GND GND VCC ena ble n.c. GND J3 C7 R1 C8 J1 J2 C10 C5 MSL6 MSL7 L1 MSL1 C1 L2 MSL3 MSL2 C4 MSL8 C3 C2 MSL4 MSL5 RF in RF out R2 001aam038 See Table 12 for a list of components. Fig 13. 920 MHz to 960 MHz application reference board BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 10 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 12. 920 MHz to 960 MHz list of components See Figure 5 and Figure 13 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1, C4 capacitor 68 pF DC blocking GRM1885C1H680JA01D C2 capacitor 9.1 pF input match Murata GRM1885C1H9R1CZ01D C3 capacitor 5.1 pF output match Murata GRM1885C1H5R1CZ01D C5 capacitor 10 nF RF decoupling Murata GRM1885C1H1R0CZ01D C6 capacitor 1 μF LF decoupling AVX 06033D105KAT2A C7 capacitor 10 μF LF decoupling AVX 1206ZG106ZAT2A C8 capacitor 12 pF noise decoupling Murata GRM1555C1H120JZ01D J1, J2 RF connector SMA J3 DC connector 6 pins L1 inductor 2.2 nH output match Tyco Electronics 36501J2N2JTDG L2 inductor 22 nH DC Feed Tyco Electronics 36501J022JTDG PCB RO4003C stack Emerson Network Power 142-0701-841 MOLEX KOVO MSL1 micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match Width (W) × Spacing (S) × Length (L) MSL2 micro stripline 1.14 mm × 0.8 mm × 6.8 mm input match Width (W) × Spacing (S) × Length (L) MSL3 micro stripline 1.14 mm × 0.8 mm × 4.4 mm input match Width (W) × Spacing (S) × Length (L) MSL4 micro stripline 1.14 mm × 0.8 mm × 2.0 mm output match Width (W) × Spacing (S) × Length (L) MSL5 micro stripline 1.14 mm × 0.8 mm × 3.2 mm output match Width (W) × Spacing (S) × Length (L) MSL6 micro stripline 1.14 mm × 0.8 mm × 4.2 mm output match Width (W) × Spacing (S) × Length (L) MSL7 micro stripline 1.14 mm × 0.8 mm × 1.8 mm output match Width (W) × Spacing (S) × Length (L) MSL8 micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 1.8 Ω R2 resistor 2 kΩ trimmer BGA7127 Product data sheet Width (W) × Spacing (S) × Length (L) Yageo RC0603FR-071R8L bias adjustment All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 Bourns 3214W-1-202E © NXP B.V. 2010. All rights reserved. 11 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12.2 1930 MHz to 1990 MHz at 5 V; 180 mA C6 R1 VCC C5 C7 L1 VCC(BIAS) 50 Ω MSL1 C1 MSL2 VCC(RF) RF_IN C2 MSL3 MSL5 MSL4 MSL6 50 Ω C3 BGA7127 ICQ_ADJ C4 SHDN R2 001aam177 enable See Table 13 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 14. 1930 MHz to 1990 MHz application schematic 001aam117 32 PL(1dB) (dBm) Gp (dB) (1) (2) (3) 30 16 28 14 26 12 24 10 22 1.93 001aam118 18 1.95 1.97 1.99 8 1.93 (1) (2) (3) 1.95 f (GHz) (1) Tcase = 25 °C (2) Tcase = 85 °C (2) Tcase = 85 °C (3) Tcase = −40 °C (3) Tcase = −40 °C Fig 15. Output power at 1 dB gain compression as a function of frequency Product data sheet 1.99 f (GHz) (1) Tcase = 25 °C BGA7127 1.97 Fig 16. Power gain as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 12 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam119 0 001aam120 46 IP3O (dBm) RLin, RLout, ISL (dB) 44 (3) (1) −10 (1) 42 (2) (2) 40 (3) −20 38 −30 1.93 1.95 1.97 36 1.93 1.99 1.95 1.97 f (GHz) 1.99 f (GHz) Tcase = 25 °C. PL = 17 dBm; tone spacing = 1 MHz. (1) RLin (1) Tcase = 25 °C (2) RLout (2) Tcase = 85 °C (3) ISL (3) Tcase = −40 °C Fig 17. Input return loss, output return loss and isolation as a function of frequency Fig 18. Output third-order intercept point as a function of frequency GND GND VCC enable n.c. GND J3 C7 R1 C6 J1 J2 C5 MSL4 MSL5 L1 MSL1 C1 MSL2 MSL3 C2 C4 MSL6 C3 RF in RF out R2 001aam039 See Table 13 for a list of components. Fig 19. 1930 MHz to 1990 MHz application reference board BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 13 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 13. 1930 MHz to 1990 MHz list of components See Figure 14 and Figure 19 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1,C4 capacitor 15 pF DC blocking GRM1885C1H150JA01D C2 capacitor 2.7 pF input match Murata, GRM1885C1H2R7CZ01D C3 capacitor 1.8 pF output match Murata, GRM1885C1H1R8CZ01D C5 capacitor 15 pF RF decoupling Murata, GRM1885C1H150JA01D C6 capacitor 100 nF LF decoupling AVX, 0603YC104KAT2A C7 capacitor 10 μF LF decoupling AVX, 1206ZG106ZAT2A J1,J2 RF connector SMA J3 DC connector 6 pins L1 inductor MSL1 Emerson Network Power, 142-0701-841 MOLEX 22 nH DC Feed Tyco Electronics, 36501J022JTDG micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match Width (W) × Spacing (S) × Length (L) MSL2 micro stripline 1.14 mm × 0.8 mm × 11.4 mm input match Width (W) × Spacing (S) × Length (L) MSL3 micro stripline 1.14 mm × 0.8 mm × 5.9 mm output match Width (W) × Spacing (S) × Length (L) MSL4 micro stripline 1.14 mm × 0.8 mm × 1.4 mm output match Width (W) × Spacing (S) × Length (L) MSL5 micro stripline 1.14 mm × 0.8 mm × 4.6 mm output match Width (W) × Spacing (S) × Length (L) MSL6 micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match Width (W) × Spacing (S) × Length (L) R1 resistor 1Ω R2 resistor 2 kΩ trimmer Yageo, RC0603FR-071RL bias adjustment Bourns, 3214W-1-202E 12.3 2110 MHz to 2170 MHz at 5 V; 180 mA C6 R1 VCC C5 C7 L1 VCC(BIAS) 50 Ω MSL1 C1 MSL2 C2 MSL4 VCC(RF) MSL3 RF_IN BGA7127 ICQ_ADJ C4 MSL5 50 Ω C3 SHDN R2 enable 001aam040 See Table 14 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 20. 2110 MHz to 2170 MHz application schematic BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 14 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam121 32 PL(1dB) (dBm) 001aam122 18 Gp (dB) 30 16 (1) (2) (3) 28 14 (1) (2) (3) 26 12 24 10 22 2.11 2.13 2.15 2.17 8 2.11 2.13 2.15 f (GHz) (1) Tcase = 25 °C (1) Tcase = 25 °C (2) Tcase = 85 °C (2) Tcase = 85 °C (3) Tcase = −40 °C (3) Tcase = −40 °C Fig 21. Output power at 1 dB gain compression as a function of frequency 001aam123 0 2.17 f (GHz) Fig 22. Power gain as a function of frequency 001aam124 46 IP3O (dBm) RLin, RLout, ISL (dB) 44 (2) −10 (3) (1) (1) 42 (2) 40 (3) −20 38 −30 2.11 2.13 2.15 2.17 36 2.11 2.13 f (GHz) Tcase = 25 °C. PL = 17 dBm; tone spacing = 1 MHz. (1) Tcase = 25 °C (2) RLout (2) Tcase = 85 °C (3) ISL (3) Tcase = −40 °C Fig 23. Input return loss, output return loss and isolation as a function of frequency Product data sheet 2.17 f (GHz) (1) RLin BGA7127 2.15 Fig 24. Output third-order intercept point as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 15 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam526 0 001aam527 0 ACPR (dBc) −10 ACPR (dBc) −20 −20 −30 −40 (1) (2) (3) (4) −40 (1) (2) (3) (4) −50 −60 −60 −80 0 5 10 15 −70 20 25 PL(AV) (dBm) 2-carrier W-CDMA; each carrier according to 3GPP test model 1; 64 DPCH; PAR for composite signal = 7.5 dB; 5 MHz carrier spacing. 0 5 10 15 20 25 PL(AV) (dBm) 2-carrier W-CDMA; each carrier according to 3GPP test model 1; 64 DPCH; PAR for composite signal = 9 dB; 10 MHz carrier spacing. (1) f = 2110 MHz; ACPR measured at f ± 5 MHz (1) f = 2110 MHz; ACPR measured at f ± 5 MHz (2) f = 2170 MHz; ACPR measured at f ± 5 MHz (2) f = 2170 MHz; ACPR measured at f ± 5 MHz (3) f = 2110 MHz; ACPR measured at f ± 10 MHz (3) f = 2110 MHz; ACPR measured at f ± 10 MHz (4) f = 2170 MHz; ACPR measured at f ± 10 MHz (4) f = 2170 MHz; ACPR measured at f ± 10 MHz Fig 25. Adjacent channel power ratio as a function of average output power Fig 26. Adjacent channel power ratio as a function of average output power 001aam528 43 IP3o (dBm) (1) 41 (2) 39 37 10 14 18 22 PL (dBm) per tone f = 2140 MHz; tone spacing = 1 MHz. (1) Upper sideband (2) Lower sideband Fig 27. Output third-order intercept point as a function of output power per tone BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 16 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier GND GND VCC enable n.c. GND J3 C7 R1 C6 J1 J2 C5 MSL4 L1 MSL1 C1 MSL2 MSL3 C2 C4 MSL5 C3 RF in RF out R2 001aam041 See Table 14 for a list of components. Fig 28. 2110 MHz to 2170 MHz application reference board Table 14. 2110 MHz to 2170 MHz list of components See Figure 20 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1,C4 capacitor 15 pF DC blocking Murata, GRM1885C1H150JA01D C2 capacitor 2.4 pF input match Murata, GRM1885C1H2R4CZ01D C3 capacitor 1.5 pF output match Murata, GRM1885C1H1R5CZ01D C5 capacitor 15 pF RF decoupling Murata, GRM1885C1H150JA01D C6 capacitor 100 nF LF decoupling AVX, 0603YC104KAT2A C7 capacitor 10 μF LF decoupling J1,J2 RF connector SMA J3 DC connector 6 pins L1 inductor MSL1 MSL2 AVX, 1206ZG106ZAT2A Emerson Network Power, 142-0701-841 MOLEX DC Feed Tyco Electronics, 36501J022JTDG micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match Width (W) × Spacing (S) × Length (L) micro stripline 1.14 mm × 0.8 mm × 11.2 mm input match Width (W) × Spacing (S) × Length (L) MSL3 micro stripline 1.14 mm × 0.8 mm × 5.9 mm output match Width (W) × Spacing (S) × Length (L) MSL4 micro stripline 1.14 mm × 0.8 mm × 6.0 mm output match Width (W) × Spacing (S) × Length (L) MSL5 micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match Width (W) × Spacing (S) × Length (L) R1 resistor 1Ω R2 resistor 2 kΩ trimmer BGA7127 Product data sheet 22 nH Yageo, RC0603FR-071RL bias adjustment Bourns, 3214W-1-202E All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 17 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12.4 2405 MHz to 2485 MHz at 5 V; 180 mA C6 R1 VCC C5 C7 L2 VCC(BIAS) 50 Ω MSL1 C1 MSL2 L1 MSL3 C2 MSL4 VCC(RF) RF_IN MSL5 MSL6 50 Ω C3 BGA7127 ICQ_ADJ C4 SHDN R2 enable 001aam042 See Table 15 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 29. 2405 MHz to 2485 MHz application schematic 001aam125 32 PL(1dB) (dBm) 001aam126 18 Gp (dB) 30 16 (1) (2) (3) 28 14 26 12 24 10 22 2.405 2.425 2.445 2.465 2.485 f (GHz) 8 2.405 (1) (2) (3) 2.425 (1) Tcase = 25 °C (1) Tcase = 25 °C (2) Tcase = 85 °C (2) Tcase = 85 °C (3) Tcase = −40 °C (3) Tcase = −40 °C Fig 30. Output power at 1 dB gain compression as a function of frequency BGA7127 Product data sheet 2.445 2.465 2.485 f (GHz) Fig 31. Power gain as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 18 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam127 0 001aam128 46 IP3O (dBm) RLin, RLout, ISL (dB) 44 −10 (1) (2) (3) (1) 42 (2) (3) 40 −20 38 −30 2.405 2.425 2.445 36 2.405 2.465 2.485 f (GHz) Tcase = 25 °C. 2.425 2.445 2.465 2.485 f (GHz) PL = 17 dBm; tone spacing = 1 MHz. (1) RLin (1) Tcase = 25 °C (2) RLout (2) Tcase = 85 °C (3) ISL (3) Tcase = −40 °C Fig 32. Input return loss, output return loss and isolation as a function of frequency Fig 33. Output third-order intercept point as a function of frequency GND GND VCC enable n.c. GND J3 C7 R1 C6 J1 J2 MSL3 C5 MSL5 L2 C1 MSL1 L1 MSL2 MSL4 C2 C4 MSL6 C3 RF in RF out R2 001aam043 See Table 15 for a list of components. Fig 34. 2405 MHz to 2485 MHz application reference board BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 19 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 15. 2405 MHz to 2485 MHz list of components See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1,C4 capacitor 15 pF DC blocking GRM1885C1H150JA01D C2 capacitor 1.5 pF input match Murata, GRM1885C1H1R5CZ01D C3 capacitor 1.5 pF output match Murata, GRM1885C1H1R5CZ01D C5 capacitor 15 pF RF decoupling Murata, GRM1885C1H150JA01D C6 capacitor 100 nF LF decoupling AVX, 0603YC104KAT2A C7 capacitor 10 μF LF decoupling AVX, 1206ZG106ZAT2A L1 inductor 3.3 nH input match Tyco Electronics, 36501J3N3JTDG L2 inductor 22 nH DC Feed Tyco Electronics, 36501J022JTDG MSL1 micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match Width (W) × Spacing (S) × Length (L) MSL2 micro stripline 1.14 mm × 0.8 mm × 8.6 mm input match Width (W) × Spacing (S) × Length (L) MSL3 micro stripline 1.14 mm × 0.8 mm × 2.8 mm input match Width (W) × Spacing (S) × Length (L) MSL4 micro stripline 1.14 mm × 0.8 mm × 6.0 mm output match Width (W) × Spacing (S) × Length (L) MSL5 micro stripline 1.14 mm × 0.8 mm × 5.9 mm output match Width (W) × Spacing (S) × Length (L) MSL6 micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match Width (W) × Spacing (S) × Length (L) R1 resistor 1Ω R2 resistor 2 kΩ trimmer Yageo, RC0603FR-071RL bias adjustment Bourns, 3214W-1-202E 12.5 PCB stack through via 35 μm (1 oz.) copper + 0.3 μm gold plating RF and analog routing RO4003C, 0.51 mm (20 mil) 35 μm (1 oz.) copper RF and analog ground (1) 0.2 mm (8 mil) 35 μm (1 oz.) copper analog routing FR4, 0.15 mm (6 mil) 35 μm (1 oz.) copper RF and analog ground 014aab087 Dielectric constant for RO4003C; εr = 3.38 Fig 35. PCB stack BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 20 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 13. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm SOT908-1 0 1 2 mm scale X B D A E A A1 c detail X terminal 1 index area e1 terminal 1 index area e v w b 1 4 M M C C A B C y1 C y L exposed tie bar (4×) Eh exposed tie bar (4×) 8 5 Dh DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 L v w y y1 mm 1 0.05 0.00 0.3 0.2 0.2 3.1 2.9 2.25 1.95 3.1 2.9 1.65 1.35 0.5 1.5 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT908-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-09-26 05-10-05 MO-229 Fig 36. Package outline SOT908-1 (HVSON8) BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 21 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 14. Abbreviations Table 16. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CPE Customer-Premises Equipment DC Direct Current DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge HTOL High Temperature Operating Life ISM Industrial, Scientific and Medical MMIC Monolithic Microwave Integrated Circuit MoCA Multimedia over Coax Alliance RFID Radio Frequency IDentification SMA SubMiniature version A TX Transmit W-CDMA Wideband Code Division Multiple Access WLAN Wireless Local Area Network 15. Revision history Table 17. Revision history Document ID Release date Data sheet status Change notice Supersedes BGA7127 v.3 20101203 Product data sheet - BGA7127 v.2 Modifications: • • • • • Figure 10 on page 9: Figure has been changed Figure 11 on page 9: Figure has been changed Figure 25 on page 16: Figure has been changed Figure 26 on page 16: Figure has been changed Some page- layout enhancements have been made BGA7127 v.2 20100913 Product data sheet - BGA7127 v.1 BGA7127 v.1 20100726 Product data sheet - - BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 22 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 23 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BGA7127 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 3 December 2010 © NXP B.V. 2010. All rights reserved. 24 of 25 BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 18. Contents 1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 7 8 8.1 9 9.1 10 11 12 12.1 12.2 12.3 12.4 12.5 13 14 15 16 16.1 16.2 16.3 16.4 17 18 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Supply current adjustment . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Scattering parameters . . . . . . . . . . . . . . . . . . . 7 Reliability information . . . . . . . . . . . . . . . . . . . . 7 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . . 8 920 MHz to 960 MHz at 5 V; 180 mA . . . . . . . . 8 1930 MHz to 1990 MHz at 5 V; 180 mA . . . . . 12 2110 MHz to 2170 MHz at 5 V; 180 mA . . . . . 14 2405 MHz to 2485 MHz at 5 V; 180 mA . . . . . 18 PCB stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 22 Legal information. . . . . . . . . . . . . . . . . . . . . . . 23 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 23 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Contact information. . . . . . . . . . . . . . . . . . . . . 24 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 December 2010 Document identifier: BGA7127