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BGA7127

BGA7127

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    BGA7127 - 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier - NXP Semiconductors

  • 数据手册
  • 价格&库存
BGA7127 数据手册
BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 01 — 26 July 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior performance up to 2700 MHz. Its power saving features include simple quiescent current adjustment, which allows class-AB operation and logic-level shutdown control to reduce the supply current to 4 μA. 1.2 Features and benefits 400 MHz to 2700 MHz frequency operating range 12 dB small signal gain at 2 GHz 28 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical performance 5 V single supply operation All pins ESD protected 1.3 Applications Broadband CPE/MoCA WLAN/ISM/RFID Wireless infrastructure (base station, repeater, backhaul systems) Industrial applications E-metering Satellite Master Antenna TV (SMATV) 1.4 Quick reference data Table 1. Quick reference data Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 180 mA; Tcase = 25 °C; unless otherwise specified. Symbol Parameter f Gp PL(1dB) IP3O [1] [2] Conditions [1] Min 400 Typ - Max 13.5 - Unit dB dBm dBm frequency power gain output power at 1 dB gain compression output third-order intercept point f = 2140 MHz f = 2140 MHz f = 2140 MHz 2700 MHz 10.5 12 [2] 26.5 28.0 38 42 Operation outside this range is possible but not guaranteed. PL = 17 dBm per tone; spacing = 1 MHz. NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 2. Pinning information 2.1 Pinning terminal 1 index area n.c. VCC(RF) VCC(RF) n.c. 1 2 8 7 ICQ_ADJ RF_IN SHDN VCC(BIAS) BGA7127 3 4 GND PAD 6 5 001aam036 Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 2. Symbol n.c. VCC(RF) VCC(BIAS) SHDN RF_IN ICQ_ADJ GND [1] [2] [3] Pin description Pin 1, 4 2, 3 5 6 7 8 GND pad Description not connected RF output for the power amplifier and DC supply input for the RF transistor collector [1] bias supply voltage [2] shutdown control function enabled / disabled RF input for the power amplifier [1] quiescent collector current adjustment by an external resistor RF ground and DC ground [3] This pin is DC-coupled and requires an external DC-blocking capacitor. RF decoupled. The center metal base of the SOT908-1 also functions as heatsink for the power amplifier. 3. Ordering information Table 3. Ordering information Name BGA7127 HVSON8 Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 × 3 × 0.85 mm Version SOT908-1 Type number Package BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 2 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 4. Functional diagram VCC VCC(BIAS) 5 ICQ_ADJ 8 R2 SHDN 6 BIAS ENABLE BANDGAP V/I CONVERTER R1 INPUT MATCH RF_IN 7 2, 3 VCC(RF) RF_OUT OUTPUT MATCH GND 014aab047 Fig 2. Functional diagram 5. Shutdown control Table 4. Mode Idle TX Shutdown control settings Mode description medium power MMIC fully off; minimal supply current Function description shutdown control enabled SHDN 0 1 Vctrl(sd) (V) Min 0 2.5 Max 0.7 Ictrl(sd) (μA) Min Max 2 3 medium power MMIC transmit mode shutdown control disabled VCC(BIAS) - BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 3 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 6. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCC(RF) VCC(BIAS) ICC Vctrl(sd) Pi(RF) Tcase Tj VESD Parameter RF supply voltage bias supply voltage supply current shutdown control voltage RF input power case temperature junction temperature electrostatic discharge voltage Human Body Model (HBM); According JEDEC standard 22-A114E Charged Device Model (CDM); According JEDEC standard 22-C101B [1] [2] [3] See Figure 3 for safe operating area. The supply current is adjustable. See Section 8.1 “Supply current adjustment” and Section 12 “Application information”. If Vctrl(sd) exceeds VCC(BIAS), the internal ESD circuit can be damaged. The recommended preventive measure is to limit the Ictrl(sd) to 20 mA. If the SHDN function is not used, the SHDN pin should be connected to VCC(BIAS). Conditions [1] [1] [1][2] [3] Min 0.0 −40 - Max 6.0 6.0 325 25 +85 150 2000 500 Unit V V mA dBm °C °C V V VCC(BIAS) V 350 ICC (mA) 300 001aal536 250 200 150 100 2 3 4 5 6 7 VCC(RF) (V) Exceeding the safe operating area limits may cause serious damage to the product. The impact on ICC due to the spread of the external ICQ resistor (R2) should be taken into account. The product-spread on ICC should be taken into account (See Section 8 “Static characteristics”). Fig 3. BGA7127 DC safe operating area BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 4 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 7. Thermal characteristics Table 6. Symbol Rth(j-mb) [1] Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Tcase = 85 °C; VCC = 5 V; ICC = 180 mA [1] Typ Max Unit 28 K/W Defined as thermal resistance from junction to GND pad. 8. Static characteristics Table 7. Characteristics Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values at VCC = 5.0 V; Tcase = 25 °C; unless otherwise specified. Symbol Parameter ICC supply current R1 = 1 Ω; R2 = 909 Ω, E96 R1 = 1.8 Ω; R2 = 909 Ω, E96 during shutdown; pin SHDN = LOW (shutdown enabled) [1] [2] Conditions [1] [2] [2] Min 100 160 160 - Typ 180 180 4 Max 250 200 200 6 Unit mA mA mA μA The supply current is adjustable. See Section 8.1 “Supply current adjustment” and Section 12 “Application information”. See Section 12 “Application information”. 8.1 Supply current adjustment The supply current can be adjusted by changing the value of external ICQ resistor (R2). 250 ICC (mA) 200 001aal537 150 100 700 900 1100 1300 1500 1700 R2 (Ω) Fig 4. Supply current as a function of the value of R2 at a supply voltage of 5 V. BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 5 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 9. Dynamic characteristics Table 8. Characteristics at VCC = 5 V Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 180 mA; Tcase = 25 °C; see Section 12 “Application information”; unless otherwise specified. Symbol f Gp Parameter frequency power gain f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz PL(1dB) output power at 1 dB gain compression f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz IP3O output third-order intercept point f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz NF noise figure f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz RLin input return loss f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz RLout output return loss f = 940 MHz f = 1960 MHz f = 2140 MHz f = 2445 MHz [1] [2] [3] Operation outside this range is possible but not guaranteed. Defined at Pi = −40 dBm; small signal conditions. PL = 17 dBm; tone spacing = 1 MHz. [2] [2] [2] [2] [2] [2] [2] [2] [3] [3] [3] [3] Conditions [1] [2] [2] [2] [2] Min 400 10.5 26.5 38 - Typ 20 13 12 11 27.5 28.5 28.0 27.5 42 42 42 41 2.8 4.4 4.5 4.8 −24 −10 −9 −11 −11 −13 −10 −19 Max 2700 - Unit MHz dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB dB dB dB dB dB dB dB dB dB dB BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 6 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 9.1 Scattering parameters Table 9. Scattering parameters at 5 V, MMIC only VCC = 5 V; ICC = 180 mA; Tcase = 25 °C. f (MHz) s11 Magnitude (ratio) 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 0.92 0.91 0.91 0.91 0.91 0.91 0.90 0.90 0.90 0.91 0.91 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.92 0.92 0.90 0.90 0.89 Angle (degree) 178 176 174 172 170 167 165 163 161 159 156 155 153 152 152 151 152 151 151 151 151 152 152 152 s21 Magnitude (ratio) 8.64 6.95 5.88 5.05 4.47 4.01 3.64 3.30 3.0 2.75 2.53 2.33 2.16 2.01 1.86 1.75 1.64 1.56 1.48 1.43 1.38 1.33 1.29 1.27 Angle (degree) 91 88 86 83 81 79 76 74 71 69 67 65 64 62 61 60 60 59 58 57 57 57 56 55 s12 Magnitude (ratio) 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.05 Angle (degree) 45 49 51 53 55 55 54 52 51 50 51 52 52 51 48 49 51 52 52 52 52 51 50 50 s22 Magnitude (ratio) 0.75 0.76 0.75 0.75 0.74 0.74 0.75 0.76 0.75 0.76 0.76 0.77 0.77 0.78 0.78 0.79 0.80 0.80 0.80 0.80 0.79 0.80 0.79 0.78 Angle (degree) −173 −175 −176 −178 −180 179 177 175 173 172 171 170 169 168 168 168 168 169 169 170 171 172 173 173 10. Reliability information Table 10. HTOL Reliability Intrinsic failure rate 4 according to JESD85; confidence level 60 %; Tj = 55 °C; activation energy = 0.7 eV; acceleration factor determined according to the Arrhenius equation. Life test Conditions 11. Moisture sensitivity Table 11. Moisture sensitivity level Class 1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Test methodology JESD-22-A113 BGA7127 Product data sheet Rev. 01 — 26 July 2010 7 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12. Application information 12.1 5 V application 12.1.1 920 MHz to 960 MHz at 5 V; 180 mA R1 C6 VCC C8 C7 C5 VCC(BIAS) 50 Ω MSL1 C1 MSL2 MSL3 L2 RF_IN VCC(RF) MSL4 L1 MSL5 MSL6 MSL7 C4 MSL8 50 Ω C2 BGA7127 ICQ_ADJ R2 C3 SHDN enable 001aam037 See Table 12 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 5. 5 V application schematic; 920 MHz to 960 MHz 32 PL(1dB) (dBm) 30 001aam170 26 Gp (dB) 24 001aam171 (1) (2) (3) 28 22 (1) (2) (3) 26 20 24 18 22 0.92 0.93 0.94 0.95 f (GHz) 0.96 16 0.92 0.93 0.94 0.95 f (GHz) 0.96 (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. Fig 6. Output power at 1 dB gain compression as a function of frequency Fig 7. Power gain as a function of frequency BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 8 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 0 RLin, RLout, ISL (dB) −5 −10 −15 −20 −25 −30 −35 0.92 (3) (2) 001aam172 46 IP3O (dBm) 44 001aam173 (1) (2) (3) 42 40 38 (1) 0.93 0.94 0.95 f (GHz) 0.96 36 0.92 0.93 0.94 0.95 f (GHz) 0.96 Tcase = 25 °C. (1) RLin. (2) RLout. (3) ISL. PL = 17 dBm; tone spacing = 1 MHz (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. Fig 8. Input return loss, output return loss and isolation as a function of frequency Fig 9. Output third-order intercept point as a function of frequency ena ble GND GND GND VCC n.c. J3 C7 R1 C8 J1 C10 L1 MSL1 C1 MSL2 C2 MSL3 C3 C5 MSL6 MSL7 L2 C4 MSL8 J2 MSL4 MSL5 RF in RF out R2 001aam038 See Table 12 for a list of components. Fig 10. 5 V application reference board; 920 MHz to 960 MHz BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 9 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 12. 5 V application list of components; 920 MHz to 960 MHz See Figure 5 and Figure 10 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component C1, C4 C2 C3 C5 C6 C7 C8 J1, J2 J3 L1 L2 MSL1[1] MSL2[1] MSL3[1] MSL4[1] MSL5[1] MSL6[1] MSL7[1] MSL8[1] R1 R2 [1] Description capacitor capacitor capacitor capacitor capacitor capacitor capacitor RF connector DC connector inductor inductor PCB micro stripline micro stripline micro stripline micro stripline micro stripline micro stripline micro stripline micro stripline resistor resistor Value 68 pF 9.1 pF 5.1 pF 10 nF 1 μF 10 μF 12 pF SMA 6 pins 2.2 nH 22 nH RO4003C stack 1.14 mm × 0.8 mm × 10.95 mm 1.14 mm × 0.8 mm × 6.8 mm 1.14 mm × 0.8 mm × 4.4mm 1.14 mm × 0.8 mm × 2.0 mm 1.14 mm × 0.8 mm × 3.2 mm 1.14 mm × 0.8 mm × 4.2 mm 1.14 mm × 0.8 mm × 1.8 mm 1.14 mm × 0.8 mm × 10.95 mm 1.8 Ω 2 kΩ trimmer Function DC blocking input match output match RF decoupling LF decoupling LF decoupling noise decoupling Remarks GRM1885C1H680JA01D Murata GRM1885C1H9R1CZ01D Murata GRM1885C1H5R1CZ01D Murata GRM1885C1H1R0CZ01D AVX 06033D105KAT2A AVX 1206ZG106ZAT2A Murata GRM1555C1H120JZ01D Emerson Network Power 142-0701-841 MOLEX output match DC Feed input match input match input match output match output match output match output match output match Tyco Electronics 36501J2N2JTDG Tyco Electronics 36501J022JTDG KOVO Yageo RC0603FR-071R8L bias adjustment Bourns 3214W-1-202E MSL1 to MSL8 dimensions are specified as Width (W), Spacing (S) and Length (L). BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 10 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12.1.2 1930 MHz to 1990 MHz at 5 V; 180 mA R1 C6 VCC C5 C7 VCC(BIAS) 50 Ω MSL1 C1 MSL2 L1 RF_IN VCC(RF) MSL3 MSL4 MSL5 C4 MSL6 50 Ω C2 BGA7127 ICQ_ADJ R2 C3 SHDN enable 001aam177 See Table 13 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 11. 5 V application schematic; 1930 MHz to 1990 MHz 32 PL(1dB) (dBm) 30 001aam117 18 Gp (dB) 001aam118 (1) (2) (3) 16 (1) (2) (3) 28 14 26 12 24 10 22 1.93 1.95 1.97 f (GHz) 1.99 8 1.93 1.95 1.97 f (GHz) 1.99 (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. Fig 12. Output power at 1 dB gain compression as a function of frequency Fig 13. Power gain as a function of frequency BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 11 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 0 RLin, RLout, ISL (dB) (1) 001aam119 46 IP3O (dBm) 44 001aam120 (3) −10 42 (2) (1) (2) 40 −20 (3) 38 −30 1.93 1.95 1.97 f (GHz) 1.99 36 1.93 1.95 1.97 f (GHz) 1.99 Tcase = 25 °C. (1) RLin. (2) RLout. (3) ISL. PL = 17 dBm; tone spacing = 1 MHz (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. Fig 14. Input return loss, output return loss and isolation as a function of frequency Fig 15. Output third-order intercept point as a function of frequency enable GND GND GND VCC n.c. J3 C7 R1 C6 J1 C5 MSL4 MSL5 L1 MSL1 C1 MSL2 C2 MSL3 C3 C4 MSL6 J2 RF in RF out R2 001aam039 See Table 13 for a list of components. Fig 16. 5 V application reference board; 1930 MHz to 1990 MHz BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 12 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 13. 5 V application list of components; 1930 MHz to 1990 MHz See Figure 11 and Figure 16 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component C1,C4 C2 C3 C5 C6 C7 J1,J2 J3 L1 MSL1[1] MSL2[1] MSL3[1] MSL4[1] MSL5[1] MSL6[1] R1 R2 [1] Description capacitor capacitor capacitor capacitor capacitor capacitor RF connector DC connector inductor micro stripline micro stripline micro stripline micro stripline micro stripline micro stripline resistor resistor Value 15 pF 2.7 pF 1.8 pF 15 pF 100 nF 10 μF SMA 6 pins 22 nH 1.14 mm × 0.8 mm × 10.95 mm 1.14 mm × 0.8 mm × 11.4 mm 1.14 mm × 0.8 mm × 5.9 mm 1.14 mm × 0.8 mm × 1.4 mm 1.14 mm × 0.8 mm × 4.6 mm 1.14 mm × 0.8 mm × 10.95 mm 1Ω 2 kΩ trimmer Function DC blocking input match output match RF decoupling LF decoupling LF decoupling Remarks GRM1885C1H150JA01D Murata, GRM1885C1H2R7CZ01D Murata, GRM1885C1H1R8CZ01D Murata, GRM1885C1H150JA01D AVX, 0603YC104KAT2A AVX, 1206ZG106ZAT2A Emerson Network Power, 142-0701-841 MOLEX DC Feed input match input match output match output match output match output match Tyco Electronics, 36501J022JTDG Yageo, RC0603FR-071RL bias adjustment Bourns, 3214W-1-202E MSL1 to MSL6 dimensions are specified as Width (W), Spacing (S) and Length (L). 12.1.3 2110 MHz to 2170 MHz at 5 V; 180 mA R1 C6 VCC C5 C7 VCC(BIAS) 50 Ω MSL1 C1 MSL2 L1 RF_IN VCC(RF) MSL3 MSL4 C4 MSL5 50 Ω C2 BGA7127 ICQ_ADJ R2 C3 SHDN enable 001aam040 See Table 14 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 17. 5 V application schematic; 2110 MHz to 2170 MHz BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 13 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 32 PL(1dB) (dBm) 30 001aam121 18 Gp (dB) 001aam122 (1) (2) (3) 16 28 14 (1) (2) (3) 26 12 24 10 22 2.11 2.13 2.15 f (GHz) 2.17 8 2.11 2.13 2.15 f (GHz) 2.17 (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. Fig 18. Output power at 1 dB gain compression as a function of frequency Fig 19. Power gain as a function of frequency 0 RLin, RLout, ISL (dB) 001aam123 46 IP3O (dBm) 44 001aam124 (2) −10 (3) (1) 42 (1) (2) (3) 40 −20 38 −30 2.11 2.13 2.15 f (GHz) 2.17 36 2.11 2.13 2.15 f (GHz) 2.17 Tcase = 25 °C. (1) RLin. (2) RLout. (3) ISL. PL = 17 dBm; tone spacing = 1 MHz (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. Fig 20. Input return loss, output return loss and isolation as a function of frequency Fig 21. Output third-order intercept point as a function of frequency BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 14 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier enable GND GND GND VCC n.c. J3 C7 R1 C6 J1 C5 L1 MSL1 C1 MSL2 C2 MSL3 C3 C4 MSL5 MSL4 J2 RF in RF out R2 001aam041 See Table 14 for a list of components. Fig 22. 5 V application reference board; 2110 MHz to 2170 MHz Table 14. 5 V application list of components; 2110 MHz to 2170 MHz See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component C1,C4 C2 C3 C5 C6 C7 J1,J2 J3 L1 MSL1[1] MSL2[1] MSL3[1] MSL4[1] MSL5[1] R1[1] Description capacitor capacitor capacitor capacitor capacitor capacitor Value 15 pF 2.4 pF 1.5 pF 15 pF 100 nF 10 μF Function DC blocking input match output match RF decoupling LF decoupling LF decoupling Remarks Murata, GRM1885C1H150JA01D Murata, GRM1885C1H2R4CZ01D Murata, GRM1885C1H1R5CZ01D Murata, GRM1885C1H150JA01D AVX, 0603YC104KAT2A AVX, 1206ZG106ZAT2A Emerson Network Power, 142-0701-841 MOLEX DC Feed input match input match output match output match output match Yageo, RC0603FR-071RL Tyco Electronics, 36501J022JTDG RF connector SMA DC connector 6 pins inductor 22 nH micro stripline 1.14 mm × 0.8 mm × 10.95 mm micro stripline 1.14 mm × 0.8 mm × 11.2 mm micro stripline 1.14 mm × 0.8 mm × 5.9 mm micro stripline 1.14 mm × 0.8 mm × 6.0 mm micro stripline 1.14 mm × 0.8 mm × 10.95 mm resistor 1Ω BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 15 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 14. 5 V application list of components; 2110 MHz to 2170 MHz …continued See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component R2[1] [1] Description resistor Value 2 kΩ trimmer Function bias adjustment Remarks Bourns, 3214W-1-202E MSL1 to MSL5 dimensions are specified as Width (W), Spacing (S) and Length (L). 12.1.4 2405 MHz to 2485 MHz at 5 V; 180 mA R1 C6 VCC C5 C7 VCC(BIAS) 50 Ω MSL1 C1 MSL2 MSL3 L2 RF_IN VCC(RF) MSL4 MSL5 C4 MSL6 50 Ω L1 C2 BGA7127 ICQ_ADJ R2 C3 SHDN enable 001aam042 See Table 15 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 23. 5 V application schematic 2405 MHz to 2485 MHz BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 16 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 32 PL(1dB) (dBm) 30 001aam125 18 Gp (dB) 16 001aam126 (1) (2) (3) 28 14 26 12 (1) (2) (3) 24 10 22 2.405 2.425 2.445 2.465 2.485 f (GHz) 8 2.405 2.425 2.445 2.465 2.485 f (GHz) (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. Fig 24. Output power at 1 dB gain compression as a function of frequency Fig 25. Power gain as a function of frequency 0 RLin, RLout, ISL (dB) −10 001aam127 46 IP3O (dBm) 44 001aam128 (1) 42 (2) (3) (1) (2) (3) 40 −20 38 −30 2.405 2.425 2.445 2.465 2.485 f (GHz) 36 2.405 2.425 2.445 2.465 2.485 f (GHz) Tcase = 25 °C. (1) RLin. (2) RLout. (3) ISL. PL = 17 dBm; tone spacing = 1 MHz (1) Tcase = 25 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. Fig 26. Input return loss, output return loss and isolation as a function of frequency Fig 27. Output third-order intercept point as a function of frequency BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 17 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier enable GND GND GND VCC n.c. J3 C7 R1 C6 J1 MSL3 C5 L2 MSL1 L1 C1 MSL2 C2 MSL4 C3 C4 MSL6 MSL5 J2 RF in RF out R2 001aam043 See Table 15 for a list of components. Fig 28. 5 V application reference board; 2405 MHz to 2485 MHz Table 15. 5 V application list of components; 2405 MHz to 2485 MHz See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component C1,C4 C2 C3 C5 C6 C7 L1 L2 MSL1[1] MSL2[1] MSL3[1] MSL4[1] MSL5[1] MSL6[1] R1 Description capacitor capacitor capacitor capacitor capacitor capacitor inductor inductor micro stripline micro stripline micro stripline micro stripline micro stripline micro stripline resistor Value 15 pF 1.5 pF 1.5 pF 15 pF 100 nF 10 μF 3.3 nH 22 nH 1.14 mm × 0.8 mm × 8.6 mm 1.14 mm × 0.8 mm × 2.8 mm 1.14 mm × 0.8 mm × 6.0 mm 1.14 mm × 0.8 mm × 5.9 mm 1Ω Function DC blocking input match output match RF decoupling LF decoupling LF decoupling input match DC Feed input match input match output match output match Yageo, RC0603FR-071RL Remarks GRM1885C1H150JA01D Murata, GRM1885C1H1R5CZ01D Murata, GRM1885C1H1R5CZ01D Murata, GRM1885C1H150JA01D AVX, 0603YC104KAT2A AVX, 1206ZG106ZAT2A Tyco Electronics, 36501J3N3JTDG Tyco Electronics, 36501J022JTDG 1.14 mm × 0.8 mm × 10.95 mm input match 1.14 mm × 0.8 mm × 10.95 mm output match BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 18 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 15. 5 V application list of components; 2405 MHz to 2485 MHz …continued See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component R2 [1] Description resistor Value 2 kΩ trimmer Function bias adjustment Remarks Bourns, 3214W-1-202E MSL1 to MSL6 dimensions are specified as Width (W), Spacing (S) and Length (L). 12.2 PCB stack through via RF and analog routing 35 μm (1 oz.) copper + 0.3 μm gold plating RO4003C, 0.51 mm (20 mil) RF and analog ground 35 μm (1 oz.) copper (1) 0.2 mm (8 mil) analog routing 35 μm (1 oz.) copper FR4, 0.15 mm (6 mil) 35 μm (1 oz.) copper 014aab087 RF and analog ground Dielectric constant for RO4003C; εr = 3.38 Fig 29. PCB stack BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 19 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 13. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm SOT908-1 0 1 scale 2 mm X D B A E A A1 c detail X terminal 1 index area terminal 1 index area 1 e1 e b 4 v w M M CAB C C y1 C y exposed tie bar (4×) L Eh exposed tie bar (4×) 8 5 Dh DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max. 1 A1 0.05 0.00 b 0.3 0.2 c 0.2 D(1) 3.1 2.9 Dh 2.25 1.95 E(1) 3.1 2.9 Eh 1.65 1.35 e 0.5 e1 1.5 L 0.5 0.3 v 0.1 w 0.05 y 0.05 y1 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT908-1 REFERENCES IEC JEDEC MO-229 JEITA EUROPEAN PROJECTION ISSUE DATE 05-09-26 05-10-05 Fig 30. Package outline SOT908-1 (HVSON8) BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 20 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 14. Abbreviations Table 16. Acronym CPE DC ESD HTOL ISM MMIC MoCA RFID SMA TX WLAN Abbreviations Description Customer-Premises Equipment Direct Current ElectroStatic Discharge High Temperature Operating Life Industrial, Scientific and Medical Monolithic Microwave Integrated Circuit Multimedia over Coax Alliance Radio Frequency IDentification SubMiniature version A Transmit Wireless Local Area Network 15. Revision history Table 17. Revision history Release date 20100726 Data sheet status Product data sheet Change notice Supersedes Document ID BGA7127 v.1 BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 21 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 16. Legal information 16.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. © NXP B.V. 2010. All rights reserved. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BGA7127 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 01 — 26 July 2010 22 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BGA7127 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 26 July 2010 23 of 24 NXP Semiconductors BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 18. Contents 1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 7 8 8.1 9 9.1 10 11 12 12.1 12.1.1 12.1.2 12.1.3 12.1.4 12.2 13 14 15 16 16.1 16.2 16.3 16.4 17 18 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Supply current adjustment . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Scattering parameters . . . . . . . . . . . . . . . . . . . 7 Reliability information . . . . . . . . . . . . . . . . . . . . 7 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . . 8 5 V application . . . . . . . . . . . . . . . . . . . . . . . . . 8 920 MHz to 960 MHz at 5 V; 180 mA . . . . . . . . 8 1930 MHz to 1990 MHz at 5 V; 180 mA . . . . . 11 2110 MHz to 2170 MHz at 5 V; 180 mA . . . . . 13 2405 MHz to 2485 MHz at 5 V; 180 mA . . . . . 16 PCB stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 20 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 21 Legal information. . . . . . . . . . . . . . . . . . . . . . . 22 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Contact information. . . . . . . . . . . . . . . . . . . . . 23 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 July 2010 Document identifier: BGA7127
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