BLF7G22L-130N

BLF7G22L-130N Power LDMOS transistor Rev. 1 — 25 February 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] [2] f (MHz) 2110 to 2170 2110 to 2170 IDq (mA) 950 950 VDS (V) 28 28 PL(AV) (W) 30 33 Gp (dB) 18.5 18.5 ηD (%) 32 33 ACPR (dBc) −32[1] −39[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name Description BLF7G22L-130N flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 28 +150 225 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-c) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 30 W Typ Unit 0.35 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol VGS(th) IDSS BLF7G22L-130N Parameter gate-source threshold voltage drain leakage current Conditions VGS = 0 V; ID = 1.5 mA VDS = 10 V; ID = 150 mA VGS = 0 V; VDS = 28 V Min Typ 65 1.3 1.8 - Max Unit 2.3 5 V V μA V(BR)DSS drain-source breakdown voltage All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 2 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor Table 6. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol IDSX IGSS gfs RDS(on) Parameter drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 7.5 A VGS = VGS(th) + 3.75 V; ID = 5.25 A Min Typ 25 Max Unit A nA S 29.5 10 0.1 450 11 0.16 Ω 7. Test information Table 7. Functional test information Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol PL(AV) Gp RLin ηD ACPR Parameter average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 30 W PL(AV) = 30 W PL(AV) = 30 W PL(AV) = 30 W Conditions Min 17 29 Typ Max 30 −15 32 −31 −9 −28 18.5 Unit W dB dB % dBc 7.1 Ruggedness in class-AB operation The BLF7G22L-130N is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 130 W (CW); f = 2110 MHz. 7.2 Impedance information Table 8. Typical impedance information IDq = 950 mA; main transistor VDS = 28 V. ZS and ZL defined in Figure 1. f (MHz) 2050 2140 2230 ZS (Ω) 1.3 − j3.6 1.9 − j4.2 3.1 − j4.7 ZL (Ω) 2.2 − j2.6 2.0 − j2.6 1.9 − j2.8 drain ZL gate ZS 001aaf059 Fig 1. BLF7G22L-130N Definition of transistor impedance All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 3 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 7.3 1 Tone CW 19 Gp (dB) 18 (1) (2) 001aal341 60 ηD (%) 40 001aal342 (1) (2) (3) 17 (3) 16 20 15 14 0 40 80 120 PL (W) 160 0 0 40 80 120 PL (W) 160 VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 2. Power gain as a function of load power; typical values 0 RLin (dB) −10 Fig 3. Drain efficiency as a function of load power; typical values 001aal352 (1) (2) −20 (3) −30 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 4. Input return loss as a function of load power; typical values BLF7G22L-130N All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 4 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 7.4 1-carrier W-CDMA Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 20 Gp (dB) 19 (3) (2) (1) 001aal345 60 ηD (%) 40 (1) (2) 001aal346 18 17 20 16 (3) 15 0 30 60 PL (W) 90 0 0 30 60 PL (W) 90 VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz Fig 5. Power gain as a function of load power; typical values 0 001aal348 Fig 6. Drain efficiency as a function of load power; typical values 8 001aal347 ACPR5M (dBc) −20 (1) (2) (3) PAR (dB) 6 (1) (2) (3) 4 −40 2 −60 0 0 30 60 PL (W) 90 0 30 60 PL (W) 90 VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz Fig 7. Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 8. Peak-to-average power ratio as a function of load power; typical values BLF7G22L-130N All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 5 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 7.5 2-carrier W-CDMA (5 MHz carrier spacing) Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 20 Gp (dB) 19 (3) (2) (1) 001aal351 50 ηD (%) 40 (1) 001aal353 18 30 (2) (3) 17 20 16 10 15 0 10 20 30 40 50 60 PL (W) 70 0 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (2) f = 2140 MHz (3) f = 2165 MHz VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (2) f = 2140 MHz (3) f = 2165 MHz Fig 9. Power gain as a function of load power; typical values 0 ACPR5M (dBc) −20 Fig 10. drain efficiency as a function of load power; typical values 001aal354 (1) (2) (3) −40 −60 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (2) f = 2140 MHz (3) f = 2165 MHz Fig 11. Adjacent channel power ratio (5 MHz) as a function of load power; typical values BLF7G22L-130N All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 6 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 7.6 2-carrier W-CDMA (10 MHz carrier spacing) Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 20 Gp (dB) 19 (3) (2) (1) 001aal355 50 ηD (%) 40 (1) 001aal356 18 30 (2) (3) 17 20 16 10 15 0 10 20 30 40 50 60 PL (W) 70 0 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz Fig 12. Power gain as a function of load power; typical values 0 ACPR5M (dBc) −20 (1) (2) (3) 001aal357 Fig 13. Drain efficiency as a function of load power; typical values 0 ACPR10M (dBc) −20 001aal358 (1) (2) (3) −40 −40 −60 0 10 20 30 40 50 60 PL (W) 70 −60 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz Fig 14. Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 15. Adjacent channel power ratio (10 MHz) as a function of load power; typical values BLF7G22L-130N All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 7 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 7.7 Test circuit C3 C6 R1 C2 C8 C9 C11 C1 C5 BLF7G22LS-130 OUTPUT V1 RO4350 30MIL RSN BLF7G22LS-130 INPUT V1 RO4350 30MIL RSN C4 C7 C10 001aal359 See Table 9 for list of components. The drawing is not to scale. Fig 16. Component layout Table 9. List of components See Figure 16 for component layout. Component C1, C2, C3, C4, C5 C6, C7 C8, C9, C10 C11 R1 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor Value 9.1 pF 220 nF 4.7 μF; 50 V 220 μF; 63 V 6.2 Ω Remarks ATC100B AVX1206 Kemet BC Philips 1206 BLF7G22L-130N All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 8 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A 3 D1 F U1 q C B c 1 L H U2 p w1 M A M B M E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 0.067 1.100 0.057 OUTLINE VERSION SOT502A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 17. Package outline SOT502A BLF7G22L-130N All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 9 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 9. Abbreviations Table 10. Acronym 3GPP CCDF CW DPCH ESD LDMOS LDMOST PAR RF SMD VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor Peak-to-Average power Ratio Radio Frequency Surface Mounted Device Voltage Standing Wave Ratio Wideband Code Division Multiple Access 10. Revision history Table 11. Revision history Release date 20110225 Data sheet status Product data sheet Change notice Supersedes Document ID BLF7G22L-130N v.1 BLF7G22L-130N All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 10 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 11. Legal information 11.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. © NXP B.V. 2011. All rights reserved. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BLF7G22L-130N All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 25 February 2011 11 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF7G22L-130N All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 25 February 2011 12 of 13 NXP Semiconductors BLF7G22L-130N Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 3 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA (5 MHz carrier spacing) . . . 6 2-carrier W-CDMA (10 MHz carrier spacing) . . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 February 2011 Document identifier: BLF7G22L-130N