BLF6G22LS-130

BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 30 Gp (dB) 17 ηD (%) 28.5 IMD3 (dBc) −37[1] ACPR (dBc) −40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 1100 mA: N Average output power = 30 W N Power gain = 17 dB (typ) N Efficiency = 28.5 % N IMD3 = −37 dBc N ACPR = −40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 1.3 Applications I RF power amplifiers W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G22LS-130 Description earless flanged LDMOST ceramic package; 2 leads Version SOT502B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 34 +150 225 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C; PL = 30 W Typ Unit 0.43 K/W BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 23 May 2008 2 of 11 NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 180 mA VDS = 28 V; ID = 1100 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 9 A VGS = VGS(th) + 3.75 V; ID = 6.3 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 1.6 26.5 Typ 1.9 2.1 34 12 Max 2.4 2.6 5 450 Unit V V V µA A nA S 0.085 0.135 Ω 3.15 pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1100 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) Gp RLin ηD IMD3 ACPR average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 30 W PL(AV) = 30 W PL(AV) = 30 W PL(AV) = 30 W Conditions Min 16 25.5 Typ 30 17 −9 28.5 −37 −40 Max −6 −34.5 −38 Unit W dB dB % dBc dBc third order intermodulation distortion PL(AV) = 30 W 7.1 Ruggedness in class-AB operation The BLF6G22LS-130 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1100 mA; PL = 130 W (CW); f = 2170 MHz. BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 23 May 2008 3 of 11 NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 7.2 One-tone CW 19 Gp (dB) 17 001aai093 ηD 60 ηD (%) 40 Gp 15 20 13 0 40 80 120 PL (W) 0 160 VDS = 28 V; IDq = 1100 mA; f = 2170 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 23 May 2008 4 of 11 NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 7.3 Two-tone CW 19 Gp (dB) Gp 17 40 001aai094 60 ηD (%) ηD 15 20 13 0 40 80 120 PL (W) 0 160 VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz; f2 = 2170.05 MHz. Fig 2. 0 IMD (dBc) −20 Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values 001aai095 0 IMD3 (dBc) −20 001aai096 IMD3 −40 IMD5 IMD7 −40 −60 (1) (2) (5) (3) (4) −80 0 50 100 150 200 250 PL(PEP) (W) −60 0 50 100 150 200 250 PL(PEP) (W) VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz; f2 = 2170.05 MHz. VDS = 28 V; f1 = 2169.95 MHz; f2 = 2170.05 MHz. (1) IDq = 900 mA (2) IDq = 1000 mA (3) IDq = 1100 mA (4) IDq = 1200 mA (5) IDq = 1300 mA Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values Fig 4. Third order intermodulation distortion as a function of peak envelope load power; typical values BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 23 May 2008 5 of 11 NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 7.4 2-carrier W-CDMA 21 Gp (dB) 19 001aai098 40 ηD (%) 30 0 ACPR, IMD3 (dBc) −20 001aai102 ηD 17 Gp 20 −40 IMD3 ACPR 15 10 −60 13 0 10 20 30 40 PL (W) 50 0 −80 0 10 20 30 40 PL(AV) (W) VDS = 28 V; IDq = 1100 mA; f1 = 2157.5 MHz; f2 = 2167.5 MHz; carrier spacing 10 MHz. VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz; f2 = 2170.05 MHz. Fig 5. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 6. 2-carrier W-CDMA adjacent channel leakage ratio and IMD3 as functions of average load power; typical values BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 23 May 2008 6 of 11 NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 8. Test information C17 C16 R1 C4 C5 C6 R2 C7 C8 C9 C1 C2 C3 C13 C14 C15 C10 C11 C12 INPUT PCB V1 OUTPUT PCB V2 001aai108 The striplines are on a Rogers RO4350B Printed-Circuit Board (PCB) with εr = 3.48 and thickness = 0.762 mm. See Table 8 for list of components. Fig 7. Component layout for 2110 MHz to 2170 MHz test circuit for 2-carrier W-CDMA Table 8. List of components (see Figure 7) All capacitors should be soldered vertically. Component C1 C2 C3 C4 C5, C7, C10 C6, C8, C11 C9, C12 C13 C14 C15 C16 C17 R1 R2 [1] Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum capacitor electrolytic capacitor chip resistor chip resistor Value 3.6 pF 0.3 pF 1.2 pF 4.7 pF 100 nF 15 pF 220 nF 1.3 pF 1.4 pF 24 pF 10 µF 220 µF; 35 V 4.7 Ω 2.7 Ω [1] [1] [1] [1] [1] [1] [1] Remarks TDK C4532X7R1E475M t020U or equivalent Murata GRM217BR71H104KA11L or equivalent AVX12065C224K SMD 0603 SMD 0603 American Technical Ceramics type 100B or capacitor of same quality. © NXP B.V. 2008. All rights reserved. BLF6G22LS-130_1 Product data sheet Rev. 01 — 23 May 2008 7 of 11 NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 Fig 8. Package outline SOT502B © NXP B.V. 2008. All rights reserved. BLF6G22LS-130_1 Product data sheet Rev. 01 — 23 May 2008 8 of 11 NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 10. Abbreviations Table 9. Acronym 3GPP CCDF CW DPCH LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Release date Data sheet status 20080523 Product data sheet Change notice Supersedes Document ID BLF6G22LS-130_1 BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 23 May 2008 9 of 11 NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G22LS-130_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 23 May 2008 10 of 11 NXP Semiconductors BLF6G22LS-130 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 May 2008 Document identifier: BLF6G22LS-130_1