BLS3135-10

DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. handbook, halfpage BLS3135-10 PINNING - SOT445C PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION 1 APPLICATIONS • Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range. 2 3 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed class-C f (GHz) 3.1 to 3.5 VCB (V) 40 PL (W) ≥10 Top view MBK132 Fig.1 Simplified outline. Gp (dB) typ. 9 ηC (%) typ. 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2000 Feb 01 2 Philips Semiconductors Product specification Microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO ICM Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage peak collector current total power dissipation storage temperature operating junction temperature soldering temperature up to 0.2 mm from ceramic cap; t ≤ 10 s open emitter RBE = 0 open collector tp ≤ 100 µs; δ ≤ 10% tp = 100 µs; δ = 10%; Th = 25 °C CONDITIONS − − − − − −65 − − MIN. BLS3135-10 MAX. 75 75 2 1.5 34 +200 200 235 V V V A UNIT W °C °C °C THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS tp = 200 µs; δ = 10%; note 1 tp = 300 µs; δ = 10%; note 1 Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES ICBO ICES IEBO hFE PARAMETER collector-base breakdown voltage collector leakage current collector leakage current emitter leakage current DC current gain CONDITIONS IC = 2.5 mA; open emitter VCB = 40 V; IE = 0 VCE = 40 V; VBE = 0 VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 0.25 A MIN. 75 75 − − − 40 − − 0.3 0.5 0.1 − MAX. V V mA mA mA UNIT VALUE 5.2 5.8 6.3 UNIT K/W K/W K/W thermal impedance from junction to heatsink tp = 100 µs; δ = 10%; note 1 collector-emitter breakdown voltage IC = 2.5 mA; VBE = 0 APPLICATION INFORMATION RF performance at Th = 25 °C in a common-base test circuit. MODE OF OPERATION Class-C; tp = 100 µs; δ = 10% f (GHz) 3.1 to 3.5 VCE (V) 40 PL (W) ≥10 Gp (dB) ≥7.5 typ. 9 ηC (%) ≥35 typ. 40 2000 Feb 01 3 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 handbook, halfpage 12 MCD856 handbook, halfpage (1) (1) (2) (3) 12 MCD857 PL (W) 8 Gp (dB) 8 (2) (3) 4 4 0 0 0.5 1 PD (W) 1.5 0 0 4 8 PL (W) 12 VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. Fig.2 Load power as a function of drive power; typical values. Fig.3 Power gain as a function of load power; typical values. handbook, halfpage 50 MCD858 ηC handbook, halfpage 12 MCD859 24 return losses (dB) 16 (%) 40 (3) (2) (1) Gp (dB) 8 Gp 30 return losses 20 4 10 8 0 0 4 8 PL (W) 12 0 3 3.2 3.4 f (GHz) 0 3.6 VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. VCB = 40 V; class-C; PL = 10 W; tp = 100 µs; δ = 10%. Fig.4 Collector efficiency as a function of load power; typical values. Fig.5 Power gain and input return losses as functions of frequency; typical values. 2000 Feb 01 4 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 handbook, halfpage 8 MCD860 handbook, halfpage 12 MCD861 Zi (Ω) 4 ri ZL (Ω) 8 RL XL 0 −4 xi 4 −8 0 3 3.2 3.4 f (GHz) 3.6 3 3.2 3.4 f (GHz) 3.6 VCB = 40 V; class-C; PL = 10 W. VCB = 40 V; class-C; PL = 10 W. Fig.6 Input impedance as a function of frequency (series components); typical values. Fig.7 Load impedance as a function of frequency (series components); typical values. 2000 Feb 01 5 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 handbook, full pagewidth 30 30 40 C2 C1 MCD862 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr = 2.2), thickness 0.38 mm. The other side is unetched and serves as a ground plane. C1 = 10 pF (ATC 100A); C2 = 100 pF (ATC 100A). Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit. 2000 Feb 01 6 Philips Semiconductors Product specification Microwave power transistor PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads BLS3135-10 SOT445C D A F 3 D1 D2 U1 q C B c 1 H U2 E2 E1 E A p w1 M A B 2 b w2 M C Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.57 4.70 b 3.15 2.95 c 0.15 0.09 D 8.13 7.87 D1 7.65 7.35 D2 8.15 7.85 E 4.20 3.93 E1 4.25 3.95 E2 5.31 5.01 F 1.82 1.22 H 15.84 14.64 p 3.35 3.05 Q 3.33 3.03 q 14.22 U1 20.47 20.17 U2 5.18 4.98 w1 0.51 w2 1.02 OUTLINE VERSION SOT445C REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-23 2000 Feb 01 7 Philips Semiconductors Product specification Microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLS3135-10 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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